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    Untitled

    Abstract: No abstract text available
    Text: ITH40C06 MITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5047-1.1 October 1998 T h e IT H 4 0 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r


    OCR Scan     		PDF ITH40C06 DS5047-1

    ITH40C06P

    Abstract: T0247 DIODE 5035 ITH40C06
    Text: ITH40C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR Advance Inform ation DS5047-1.1 O ctober 1998 T h e IT H 4 0 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range


    OCR Scan     		PDF ITH40C06 DS5047-1 ITH40C06 ITH40C06P T0247 DIODE 5035