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    ITS 410 E2 Search Results

    ITS 410 E2 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    DIYAMP-SOT23-EVM Texas Instruments Universal Do-It-Yourself (DIY) Amplifier Circuit Evaluation Module Visit Texas Instruments Buy
    DIYAMP-SC70-EVM Texas Instruments Universal Do-It-Yourself (DIY) Amplifier Circuit Evaluation Module Visit Texas Instruments Buy
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    ITS 410 E2 Price and Stock

    Infineon Technologies AG ITS410E2HKSA1

    IC PWR SWITCH N-CHAN 1:1 TO220-5
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    Infineon Technologies AG ITS410E2E3043HKSA1

    IC PWR SWITCH N-CHAN 1:1 TO220-5
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    DigiKey ITS410E2E3043HKSA1 Tube
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    Infineon Technologies AG ITS410E2

    SMART HIGHSIDE POWER SWITCH FOR INDUSTRIAL APPICATIONS Buffer/Inverter Based Peripheral Driver, 1 Driver, 1.8A, CMOS, PZFM5
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    ComSIT USA ITS410E2 40
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    ITS 410 E2 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ITS410E2 Infineon Technologies Smart Highside Power Switch for Industrial Applications Original PDF
    ITS410E2E3043 Infineon Technologies PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), IC SWITCH HISIDE SMART TO220-5 Original PDF
    ITS410E2E3043HKSA1 Infineon Technologies Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - IC SWITCH HISIDE SMART TO220-5 Original PDF
    ITS410E2HKSA1 Infineon Technologies Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - IC SWITCH HISIDE SMART TO220-5 Original PDF

    ITS 410 E2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ITS410E2

    Abstract: PROFET SP000221219 E3043 SP000221227 ITS 410 E2
    Text: PROFET ITS 410 E2 Smart Highside Power Switch for Industrial Applications Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Operating temperature Features • Overload protection • Current limitation


    Original
    PDF PG-TO220AB/5, E3043 E3043 SP000221227 2006-Mar-28 ITS410E2 PROFET SP000221219 SP000221227 ITS 410 E2

    101B

    Abstract: 101C LS101A LS101A-GS18 LS101B LS101C
    Text: LS101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


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    PDF LS101A 2002/95/EC 2002/96/EC 18-Jul-08 101B 101C LS101A-GS18 LS101B LS101C

    31045

    Abstract: c 4106 m ITB02T 02TF-XX MIL 3106 THERMOCOUPLE MIL-DTL-5015 SOCKET PINS PAN B60 3106 diode c 4106 A-20
    Text: Series ITS and ITS-RG Intro Intro Glenair Series ITS and Series ITS-RG MIL-DTL-5015 Type Reverse Bayonet Connectors Product Selection Guide Introduction Your Guide to MIL-DTL-5015 Type Power Products A Technical Reference A B Series ITS B C Series ITS-RG C


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    PDF MIL-DTL-5015 31045 c 4106 m ITB02T 02TF-XX MIL 3106 THERMOCOUPLE MIL-DTL-5015 SOCKET PINS PAN B60 3106 diode c 4106 A-20

    101B

    Abstract: 101C DO35 LL101 LL101A SD101A SD101AW SD101BW SD101CW 900 mhz schottky diode
    Text: LL101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected e2 by a PN junction guard ring. • The low forward voltage drop and fast


    Original
    PDF LL101A LL101 SD101A, OD123 SD101AW, SD101BW, SD101CW. 08-Apr-05 101B 101C DO35 SD101A SD101AW SD101BW SD101CW 900 mhz schottky diode

    101B

    Abstract: 101C DO35 SD101A SD101A-TAP SD101A-TR SD101B SD101C
    Text: SD101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    PDF SD101A 2002/95/EC 2002/96/EC 08-Apr-05 101B 101C DO35 SD101A-TAP SD101A-TR SD101B SD101C

    101B

    Abstract: 101C LS101A LS101A-GS18 LS101B LS101C
    Text: LS101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    PDF LS101A 2002/95/EC 2002/96/EC 08-Apr-05 101B 101C LS101A-GS18 LS101B LS101C

    101B

    Abstract: 101C MCL101A MCL101A-TR MCL101A-TR3 MCL101B MCL101B-TR3 MCL101C
    Text: MCL101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    PDF MCL101A 2002/95/EC 2002/96/EC 08-Apr-05 101B 101C MCL101A-TR MCL101A-TR3 MCL101B MCL101B-TR3 MCL101C

    DO35

    Abstract: SD101A SD101A-TAP SD101A-TR SD101B SD101C
    Text: SD101A/101B/101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    PDF SD101A/101B/101C 2002/95/EC 2002/96/EC TR/10 TAP/10 08-Apr-05 DO35 SD101A SD101A-TAP SD101A-TR SD101B SD101C

    101B

    Abstract: 101C DO35 SD101A SD101A-TAP SD101A-TR SD101B SD101C
    Text: SD101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    PDF SD101A 2002/95/EC 2002/96/EC D-74025 03-Apr-06 101B 101C DO35 SD101A-TAP SD101A-TR SD101B SD101C

    101B

    Abstract: 101C DO35 LL101 LL101A SD101A SD101AW SD101BW SD101CW
    Text: LL101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The LL101 series is a metal-on-silicon Schottky barrier device which is protected e2 by a PN junction guard ring. • The low forward voltage drop and fast


    Original
    PDF LL101A LL101 SD101A, OD123 SD101AW, SD101BW, SD101CW. 18-Jul-08 101B 101C DO35 SD101A SD101AW SD101BW SD101CW

    DO35

    Abstract: SD101A SD101A-TAP SD101A-TR SD101B SD101C
    Text: SD101A/101B/101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    PDF SD101A/101B/101C 2002/95/EC 2002/96/EC TR/10 TAP/10 18-Jul-08 DO35 SD101A SD101A-TAP SD101A-TR SD101B SD101C

    101B

    Abstract: 101C MCL101A MCL101A-TR MCL101A-TR3 MCL101B MCL101B-TR3 MCL101C
    Text: MCL101A / 101B / 101C Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC


    Original
    PDF MCL101A 2002/95/EC 2002/96/EC 18-Jul-08 101B 101C MCL101A-TR MCL101A-TR3 MCL101B MCL101B-TR3 MCL101C

    ntc rt 5a

    Abstract: SNT01B snt01
    Text: SNT Series NTC Thermistors SMD Type MERITEK RoHS FEATURES UL E223037 • EIA size 0402, 0603, 0805, 1206  Highly reliable monolithic structure  Wide resistance range  Cost effective  Agency recognition: UL PART NUMBERING SYSTEM SNT 01 A 901 F


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    PDF E223037 B25/85 B25/50 ntc rt 5a SNT01B snt01

    F1E6

    Abstract: No abstract text available
    Text: IDTCSPUA877 1.8V PLL DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER COMMERCIAL TEMPERATURE RANGE 1.8V PHASE LOCKED LOOP DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER IDTCSPUA877 DESCRIPTION: FEATURES: The CSPUA877 is a PLL based clock driver that acts as a zero delay buffer


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    PDF IDTCSPUA877 IDTCSPUA877 125MHz 410MHz CUA877 SSTUA3286re CSPUA877 F1E6

    Untitled

    Abstract: No abstract text available
    Text: IDTCSPUA877 1.8V PLL DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER COMMERCIAL TEMPERATURE RANGE 1.8V PHASE LOCKED LOOP DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER IDTCSPUA877 FEATURES: DESCRIPTION: • 1 to 10 differential clock distribution • Optimized for clock distribution in DDR2 Double Data Rate


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    PDF IDTCSPUA877 125MHz 410MHz CSPUA877 CSPUA877

    Untitled

    Abstract: No abstract text available
    Text: IDTCSPUA877A 1.8V PLL DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER COMMERCIAL TEMPERATURE RANGE 1.8V PHASE LOCKED LOOP DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER IDTCSPUA877A FEATURES: DESCRIPTION: • 1 to 10 differential clock distribution • Optimized for clock distribution in DDR2 Double Data Rate


    Original
    PDF IDTCSPUA877A 125MHz 410MHz IDTCSPUA877A CSPUA877A

    CSPUA877

    Abstract: No abstract text available
    Text: IDTCSPUA877 1.8V PLL DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER COMMERCIAL TEMPERATURE RANGE 1.8V PHASE LOCKED LOOP DIFFERENTIAL 1:10 SDRAM CLOCK DRIVER IDTCSPUA877 FEATURES: DESCRIPTION: • 1 to 10 differential clock distribution • Optimized for clock distribution in DDR2 Double Data Rate


    Original
    PDF IDTCSPUA877 125MHz 410MHz IDTCSPUA877 CSPUA877

    marking z3p

    Abstract: Y4P marking code marking z2p marking y6p marking z4p marking z8p b5v6 marking z5p marking z6P inverter LS600
    Text: • ^53*131 00SS7b0 211 H A P X N AMER PHI LIPS /DISCRETE BZX84 SERIES L.7E ]> SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes in a micro m iniature plastic envelope. They are available in three series; one to the international standardized E24 (± 5% range, one in a tolerance of


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    PDF 00SS7b0 BZX84 DDSS77D marking z3p Y4P marking code marking z2p marking y6p marking z4p marking z8p b5v6 marking z5p marking z6P inverter LS600

    bel 187 transistor

    Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
    Text: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.


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    PDF LBE/LCE2003S LBE/LCE2009S LBE2Q03S LBE2009S LCE2003S LCE2009S LBE/LCE200Striplines bel 187 transistor RTC406 LBE2003S BEL 187 npn

    C15 DO-34

    Abstract: B6V2 C3V33
    Text: BZV60 SERIES J \ _ VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-34 envelopes intended fo r use as low voltage stabilizers o r voltage references. They are available in international standardized E24 ± 5% range and ± 2% tolerance range. The series


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    PDF BZV60 DO-34 OD-68 DO-34) 7Z83041 C15 DO-34 B6V2 C3V33

    transistor SMD t07

    Abstract: SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2
    Text: • flE35b05 OOfllMBO T07 ■ SIEM EN S PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •


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    PDF flE35b05 BTS410E2 023Sb05 TQ-220AB/5 Q67060-S6102-A2 CPI05t6S O-22QAB/5, E3043 E3043 Q67060-S6102-A3 transistor SMD t07 SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2

    over charge protection circuit diagram for 12V ni mh

    Abstract: smd zener diode code B2 transistor smd ZR 3H DIODE smd 41002 410E2 BTS410E2 WN smd transistor 410G2 smd diode EG - 413
    Text: 023SbD5 □ □ eï 2 b f l c] 3 1 7 • SIEM EN S PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features * Overload protection • Current limitation


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    PDF 023SbD5 BTS410E2 Q67060-S6102-A2 CPT05115 O-22QAB/5, E3062 BTS410E2 E3062A Q67060-S6102-A4 over charge protection circuit diagram for 12V ni mh smd zener diode code B2 transistor smd ZR 3H DIODE smd 41002 410E2 WN smd transistor 410G2 smd diode EG - 413

    diode zener ZD H2

    Abstract: BTS410 bts410 siemens BTS 410 E2 E3043 235L 410E2 410H BTS410H2 ZD11 Q67060-S6105
    Text: û235hD5 QOfilbOl T7fl S IE M E N S PROFET BTS410H2 Smart Highside Power Switch F eatures • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization of inductive loads


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    PDF 235hD5 BTS410H2 TQ-220AB/5 O-220AB/5, E3043 Q67060-S6105 E3043 Q67060-S6105-A3 O-22QAB/5, diode zener ZD H2 BTS410 bts410 siemens BTS 410 E2 E3043 235L 410E2 410H BTS410H2 ZD11

    bts41002

    Abstract: SIEMENS TD-400 SmD TRANSISTOR a77 B37 zener diode b37 zener 410e2 BTS 410 E2 E3043 smd code l17 transistor 6 pin SMD Z2 410H
    Text: f l23 5b0 5 DDfiimb t.37 SIEM EN S PROFET BTS 410 D2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump


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    PDF fl235b05 23SLi05 TQ-220AB/5 Q67060-S6101-A2 O-22QAB/5, E3043 Q67060-S6101-A3 E3062 bts41002 SIEMENS TD-400 SmD TRANSISTOR a77 B37 zener diode b37 zener 410e2 BTS 410 E2 E3043 smd code l17 transistor 6 pin SMD Z2 410H