Untitled
Abstract: No abstract text available
Text: BiCMOS Gate Array LZ97 Series LZ97 Series • BiCMOS Gaie Array Description ■ The LZ97 series is a BiCMOS gate array fabri cated using high speed CMOS gate for internal gate unit and bipolar transistors for peripheral buffer cir cuit. It is best suited to systems with high speed re
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itt ol 170
Abstract: No abstract text available
Text: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch
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HAL114
HAL114S
HAL114UA
4bfiZ711
itt ol 170
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ITT Intermetall
Abstract: ITT ccu 3000 i
Text: Edition O ct. 8, 1996 6 2 5 1-4 0 9 -1 PD ITT INTERMETALL 4bö2711 OOObb44 b05 VPC 32xx PRELIMINARY DATA SHEET Contents Page Section Title 4 4 4 5 1. 1.1. 1.2. 1.3. Introduction System Architecture Video Processor Family VPC Applications 6 6 6 6 6 6 6 6 8
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OOObb44
4bfl2711
ITT Intermetall
ITT ccu 3000 i
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Magnetic Field Sensor FLC 100
Abstract: transistor ITT
Text: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
HAL638UA,
HAL638S
170ch
Magnetic Field Sensor FLC 100
transistor ITT
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ITT Intermetall
Abstract: No abstract text available
Text: S Ä 5 997 IT T I N T E R M E T A L L MbflEVll □□Qbb'iS 3bfl VPC 32x5C PRELIMINARY DATASHEET Contents Page Section Title 4 4 4 5 1. 1.1. 1.2. 1.3. Introduction System Architecture Video Processor Family VPC Applications 6 6 6 6 6 6 6 6 7 7 8 8 8 9 9 9
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32x5C
Mbfi2711
GGDb73b
Mbfl2711
D00b73?
ITT Intermetall
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itt ol 170
Abstract: No abstract text available
Text: Edition May 15, 1997 6251-437-1PD ITT INTERMETALL 4bflE711 0 0 0 b S 7 b 234 VDP 31xxB PRELIMINARY DATA SHEET Contents Page Section Title 5 6 1. 1.1. Introduction VDP Applications 9 10 10 11 11 11 11 11 11 12 12 13 13 13 14 15 15 15 16 17 17 17 17 18 18 18
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6251-437-1PD
4bflE711
31xxB
itt ol 170
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Untitled
Abstract: No abstract text available
Text: PF757-02 EPSON SLA30000 Series High Speed Gate Array • Super high-speed, and high density gate array • Dual power supply operation • Raw gates from 18K to 216K gates Sea of gates DESCRIPTION The SLA30000 Series is an SOG-type CMOS gate array featuring the very high-speed operations, high density,
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PF757-02
SLA30000
SLA30000
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hef40938
Abstract: HEF4093BP Multivibrator HEF4093BT hef4093 hef4093b HEF4093BP applications HEF4093BD HEF40 sot108a
Text: HEF4093B QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER The HEF4093B consists of four Schmitt-trigger circuits. Each circu it functions as a tw o-input NAND gate w ith Schmitt-trigger action on both inputs. The gate switches at different points fo r positive and negative-going signals. The difference between the positive voltage Vp and the negative voltage
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HEF4093B
HEF4093B
HEF4093BP
14-lead
OT-27)
HEF4093BD
OT-73)
HEF4093BT
hef40938
HEF4093BP
Multivibrator
HEF4093BT
hef4093
HEF4093BP applications
HEF4093BD
HEF40
sot108a
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MC14583
Abstract: 5zzd MC14584B MC14583B CD401 MC14069UB MC14XXXBCL MC14XXXBCP MC14XXXBD ceramic case 632
Text: M O T O R O L A DU A L SC H M ITT TRIGG ER ^ J L SUFFIX CERAMIC CASE 620 | I I P SUFFIX PLASTIC CASE 548 T h e M C T 45 83B is a d u a l S c h m itt trig g e r c o n s tru c te d w ith c o m p le m e n ta ry P-cbannel and N -chan nel M O S devices o n a m o n o lith ic
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MC14583B
MC14583
5zzd
MC14584B
CD401
MC14069UB
MC14XXXBCL
MC14XXXBCP
MC14XXXBD
ceramic case 632
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Untitled
Abstract: No abstract text available
Text: Standard ICs Single Schmitt trigger BU4S584 The BU4S584 is an ultra-com pact 1C with one circuit of the inverter-type Schm itt trigger, BU4584B, built into an SNIP package. • F e a tu re s 1 Low current consum ption. 3) W ide operating power supply voltage range.
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BU4S584
BU4S584
BU4584B,
702flc
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MC14583
Abstract: No abstract text available
Text: M O T O R O L A DUAL SCHMITT TRIGGER L SUFFIX C E R A M IC CA S E 620 T h e M C 1 4 5 8 3 B is a dual S chm itt trigger constructed w ith com plem entary P-channel and N-channel M OS devices on a m onolithic silicon substrate. Each S c h m itt trigger is fu nctio nally independent
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itt ol 170
Abstract: ITT DIODE 125 diode 1000v 50a
Text: Preliminary Data Sheet No. P D -9.935 International Rectifier i l l ] ir g k i o o "CHOPPER" INT-A-PAK MODULES 5o m i2 Fast™ IGBT • Rugged Design •Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant •Switching-Loss Rating includes all "tail"
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IRGKI0050M12
S54S5
itt ol 170
ITT DIODE 125
diode 1000v 50a
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IG8T
Abstract: No abstract text available
Text: This m a ie rio l and the Information herein Is ha properly of FujS Electric Co .Ltd They shall be neither reproduced, c o pied le n t, or disclosed in any way w hatsoever (or the use of any third party.nor used lor the m anufacturing purposes w ith o u t
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JuIy-15-1997
H04-004-0T
July-15-1997
H04-004-2T
125eC
H04-004-03T
MS5F4086
H04-004-03
IG8T
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Untitled
Abstract: No abstract text available
Text: HD74HC221 • Dual M o n o stab le M u ltivib rato rs w ith S c h m itt T rigger Input Each m ultivibrator features both a negative, A , and a posi PIN ARR ANG E M E NT tive, B, transition triggered input, either o f which can be used as an in h ib it. Also included is a clear input that when taken
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HD74HC221
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Untitled
Abstract: No abstract text available
Text: Openbus I/F Components - VMEbus User Manual 4.0 Signals & DC Characteristics This section details the DC characteristics for the ACC and DARF signals. It also provides information concerning the capacitive loading for the devices. 4.1 Terminology The input and output type abbreviations used in this section are defined below. They have
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KADDR24,
KDATA31
KDATA24
KADDR31
VADDR31,
VDATA31
KADDR23
KDATA23
VADDR31
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transistor bd170
Abstract: BD170 BD168 itt ol 170
Text: MOT OR OL A SC 6367254 -CXSTRS/R F> Tb b3t?aSM 96D 8 0 5 5 7 MOTOROLA .SC <XSTRS/R F L DDfl GSS? D BD166 BD168 BD170 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M EDIUM POWER SILICON PNP TRANSISTOR 1.5 AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing
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BD166
BD168
BD170
transistor bd170
BD170
itt ol 170
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d15181
Abstract: QSpan AD899 Tundra QSpan 181-D AD17 qspan top mark
Text: Processor Interface Components—QSpan User M anual 4 Signals and DC Characteristics 4.1 Terminology The abbreviations used in this chapter are defined below. Two-state output Tristate output Bidirectional Input Output Open Drain Input with TTL threshold TTL Schmitt trigger input
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b560101
low-l172.
208-Pin
d15181
QSpan
AD899
Tundra QSpan
181-D
AD17
qspan top mark
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1mbh
Abstract: VGE515V
Text: 2230715 00043^1 ST7 S P E C 1 F 1 C A T 1 ON DEVICE name 1G B T • TYPE NAME • . SPEC. No. : _ DATE ; IM B H ! 5 - 1 2 0 M S 5 F 3 5 3 0 Jun. -25-199S F u -ii DATE drawn Jury -2S- CHKXÍ0 ^2^-h-s:2^/ p6 NAME E l e c t r i c Co.,Ltd. This Specification is subject to change without not ice.
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ms5f353n
-25-199fi
MS5F3530
H04-004-03
1mbh
VGE515V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc
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TC7SL00F/FU
TC7SL00F,
TC7SL00FU
TC7SL00
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TC7SL00
Abstract: TC7SL00F TC7SL00FU
Text: TOSHIBA TC7SL00F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL00F, TC7SL00FU 2-INPUT NAND GATE The TC7SL00 is a low voltage operative C2MOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. Operating voltage Vcc (opr 's 1~3V equivalent to 1pc
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TC7SL00F/FU
TC7SL00F,
TC7SL00FU
TC7SL00
TC7SL00F
TC7SL00F
TC7SL00FU
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TC7SL02F
Abstract: TC7SL02FU TC7SL32 TC7SL32F TC7SL32FU
Text: TOSHIBA TC7SL32F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL32F, TC7SL32FU 2-INPUT OR GATE The TC7SL32 is a low voltage operative C2MOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. Operating voltage V ( x (o p r ) 's 1~3V equivalent to 1pc
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TC7SL32F/FU
TC7SL32F,
TC7SL32FU
TC7SL32
TC7SL02F
TC7SL02FU
TC7SL32F
TC7SL32FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC7SL08F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SL08F, TC7SL08FU 2-INPUT AND GATE The TC7SL08 is a low voltage operative C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. Operating voltage V c c (o p r 's 1~3V equivalent to 1pc
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TC7SL08F/FU
TC7SL08F,
TC7SL08FU
TC7SL08
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Untitled
Abstract: No abstract text available
Text: PIC1655XT Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have 'pre-production' status. Details given may, therefore, change without notice although we would expect this performance data to be
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PIC1655XT
10msec
PIC1655XT.
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Untitled
Abstract: No abstract text available
Text: 1»ill 1IFV1F 1 1 U 1 ‘! S y P r • W 0 L HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3569S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed clock to data access
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IDT70V3569S
100nd
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