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    ITT TRANSISTORS Search Results

    ITT TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ITT TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    itt diodes

    Abstract: DIODES Inc DO201 date code marking DIODES Inc DO201 marking itt diodes 8.2 liteon PBPC tube 1j5
    Text: Product Packaging Information Surface M ount M in im um Packing Qty. Body Manuf. Logo Available Packaging Bulk Tube Qty. Tape & Reel 7 "0 13” 0 Qty. Qty. SOT23 SOT23 SOD123 MiniMELF MiniMELF ITT Diodes Inc. ITT ITT Diodes Inc. 3K 3K 3K 2.5K 2.5K 10K 10K


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    PDF OD123 itt diodes DIODES Inc DO201 date code marking DIODES Inc DO201 marking itt diodes 8.2 liteon PBPC tube 1j5

    BD512 mosfet

    Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
    Text: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe


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    itt diodes

    Abstract: ITT Semiconductors
    Text: Discrete Semiconductors The Discrete Semiconductors Product Group Whereas ITT Semiconductors 1C products are applications-oriented throughout, the range of discrete semiconductors is geared to universal applications which are not tied to specific branches of industry. Here, ITT


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    itt diodes

    Abstract: ITT Semiconductors ITT ZENER zener wafer
    Text: The ITT Semiconductors Product Range The 1994 General Catalog gives you an overview of the com plete range of sem iconductor products from ITT Semiconductors. The range breaks down into three product groups - Integrated Circuits, CMOS Sensors and Discrete Semiconductors. This year the range features for the first time


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    PDF IS09001 IS09000 itt diodes ITT Semiconductors ITT ZENER zener wafer

    ITT ccu 3000 i

    Abstract: ITT CCU CCU3000
    Text: j& p n K | g » tt CCU 3000, CCU 3000-1, CCU 3001, CCU 3001-1, Central Control Unit h Edition Feb. 14, 1995 6251-367-1DS ITT Semiconductors • HbfiS?].! GGG4ò44 b'ìB ■ ITT CCU 3000, CCU 3000-1 CCU 3001, CCU 3001-1 Contents Page Section Title 4 1. 1.1.


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    PDF 6251-367-1DS ITT ccu 3000 i ITT CCU CCU3000

    RTM 866 - 480

    Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
    Text: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964


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    PDF N914A N914B RTM 866 - 480 SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790

    ITT DIODE

    Abstract: transistor ITT DIODE ITT pnp low power fast switching transistor Solitron Transistor
    Text: Contran ^ ©tyj©? ©Mmcex T Y P IC A L SO L IT R O N C H IP C O N ST R U C T IO N De/ices. Inc. N P N TRIPLE DIFFUSED PLA N A R POWER TRANSISTO R BASE CONTACT — ! a EM ITT ER CONTACT \ EM ITT ER BASE A Solitron's triple diffused planar construction provides excellent


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    IMBT3904

    Abstract: ITT INTERMETALL
    Text: ITT SEflICOND/ INTERHETALL 5DE D • MbflE711 ÜÜOBbDb 132 « I S I IMBT3905, IMBT3906 'T -H -v . PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the NPN transistors IMBT3903 and IMBT3904 are recommended.


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    PDF MbflE711 IMBT3905, IMBT3906 IMBT3903 IMBT3904 IMBT3905 IMBT3906 O-236) 15000Hz ITT INTERMETALL

    "dual TRANSISTORs"

    Abstract: Dual Transistors TO-78 VBE12 Dual Transistors TO-71 it136
    Text: 5flE D THOnSON/ DISTRIBUTOR ^Q2kfl73 0005743 ItT TCSK Discrete Transistors Differential Amplifier Transistors - Monolithic Duals Bipolar Monolithic Dual Transistors - NPN Continued Type Packag e (Continued) . 'B 1 - 2 (N o te 1) nA M ax BVc e o V Min ' *C B O


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    PDF Q2kfl73 it121 to-78 to-71 it122 it126 "dual TRANSISTORs" Dual Transistors TO-78 VBE12 Dual Transistors TO-71 it136

    Untitled

    Abstract: No abstract text available
    Text: Die no. D-16 NPN silicon transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm TO-92 Features available in TO-92 package; for packaging information, see page 448 ITT collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at


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    PDF MPS-A06

    Zener diode 5.6 itt

    Abstract: zener diode ITT ITT DIODE zener Zener diode itt 5.6 ITT DIODE 87 ITT zener diode Discrete Semiconductors itt diodes zener diode voltage list diode ITT 51
    Text: Pages Contents Pages 2 to 5 List of Types Integrated Circuits Discrete Semiconductors 7 to 24 Introduction The ITT Semiconductors Product Range Integrated Circuits Consumer Electronics Multimedia Automotive Electronics Communications Technology Industrial and Domestic Electronics


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    PDF Spezi24 Zener diode 5.6 itt zener diode ITT ITT DIODE zener Zener diode itt 5.6 ITT DIODE 87 ITT zener diode Discrete Semiconductors itt diodes zener diode voltage list diode ITT 51

    IMBT3906

    Abstract: IMBT3904 IMBT3905
    Text: ITT SEMICOND/ INTERHETALL SDE D MË 4bflE711 ODOSbDb 132 IMBT3905, IMBT3906 'T -S i-v p — I— r PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. 3-OJ5 As complementary types the NPN transistors IMBT3903 and IMBT3904 are recommended.


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    PDF IMBT3905, IMBT3906 4bflE711 IMBT3903 IMBT3904 IMBT3905 O-236) 15000Hz

    BCX71RG

    Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
    Text: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,


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    PDF BCW61, BCX71 D002L00 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71RG BCW61RA BCW61RD transistor marking bh ra BCW61A BCW61B

    IMBT3904

    Abstract: ITT INTERMETALL
    Text: ITT SEIIICON] / INTERHETALL SGE J> • 4bfi2711 0002564 741 M I S I IMBT3903, IMBT3904 'T '’?A' ' 5 NPN Silicon Epitaxial Planar Transistors « for switching and amplifier applications. TE A s complementary types the PN P transistors IMBT3905 and IMBT3906 are recommended.


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    PDF 4bfi2711 IMBT3903, IMBT3904 IMBT3905 IMBT3906 IMBT3903 IMBT3904 O-236) 15000Hz ITT INTERMETALL

    CD40106

    Abstract: cd40106 application notes CD40106 Family specifications CD40106 diagram CD40106B 74LS CD40106BM MC14584B MM74C14 cd40106bcn
    Text: February 1988 CD40106BM/CD40106BC Hex Schmitt Trigger General Description Features The C D40106B H ex S chm itt Trigger is a m onolithic co m ple ­ m entary M OS CMOS integrated circuit constructed w ith N and P-channel enhancem ent transistors. The positive and


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    PDF CD40106BM/CD40106BC CD40106B 005V/Â CD40106 cd40106 application notes CD40106 Family specifications CD40106 diagram 74LS CD40106BM MC14584B MM74C14 cd40106bcn

    10D3

    Abstract: 1G14 C 337-40
    Text: NPN TRANSISTORS ITT SEMICOND/ INTERMET ALL 3ME D • 4böH711 0002443 5 ■ ISI T - 3 i - o \ NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 ='TO-92 . On special request, these transistors will also be produced with TO -18 pin configuration.


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    PDF BC170A BC170B BC170C BC337 BC338 BC413B2) BC413C2) BC414B2) BC414C2 BC445 10D3 1G14 C 337-40

    Untitled

    Abstract: No abstract text available
    Text: 2SB1474F5 b y > S s 7 s $ / Transistors * - • ; > h > * * Epitaxial Planar PNP Silicon Transistor (Darlington) itt^jitt'ISffl/Low Freq. Power Amp. 1 Tt'iiHl/Dimensions (Unit: mm) 1) 5 f - U > h > & & T ' hFE 2) 3) a. - x • I 5 - j ^ IS U lfiS trtJ S o


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    PDF 2SB1474F5 100ms

    MM74C14J

    Abstract: AN-90 MM54C14 MM74C14 MM74C14N
    Text: February 1988 M M 54 C 1 4/M M 74 C 14 Hex Schm itt T rig g er General Description Features The MM54C14/MM74C14 Hex Schmitt Trigger is a mono­ lithic complementary MOS CMOS integrated circuit con­ structed with N- and P-channel enhancement transistors.


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    PDF MM54C14/MM74C14 005V/Â MM74C14J AN-90 MM54C14 MM74C14 MM74C14N

    3094 transistor

    Abstract: transistor 3095
    Text: SCHMITT TRIGGER OUTPUTS Total Device Ratings NTE Type No. 3090 Output Configuration Diag. No. Schm itt Trigger 152h Maximum LED Ratings Output Ratings Isolation Voltage Surge Volts Total Power (mW) Forward Current (mA) Forward Voltage (Volts) Reverse Voltage


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    PDF NTE3090 3094 transistor transistor 3095

    BC250A

    Abstract: No abstract text available
    Text: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura­


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    PDF BC250A BC250B BC250C BC327 BC327-16 BC327-25 BC327-40 BC328 BC328-16 BC328-25 BC250A

    BCX70RJ

    Abstract: BCX70RH BCW60RA BCX70RK marking ag
    Text: ITT SEmCOND/ I NTE RME TALL SOE J> 4 bf l2 7 1 1 DDG2 S 7 Ô 4 4 fl IS I BCW60, BCX70 1— r NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. « Especially suited for automatic insertion in thick- and thin-film circuits.


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    PDF BCW60, BCX70 BCW60 BCX70 BCW61 BCX71 BCW60R BCX70R. 4bfl2711 BCX70RJ BCX70RH BCW60RA BCX70RK marking ag

    BCW61RA

    Abstract: bcx71 bcx71rh BCX71C BCW60
    Text: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,


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    PDF BCW61, BCX71 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71R. BCW61RA bcx71rh BCX71C

    MM74C14N

    Abstract: No abstract text available
    Text: Semiconductor February 1988 & M M 54 C 1 4/M M 74 C 14 Hex Schm itt T rig g er General Description Features The MM54C14/MM74C14 Hex Schmitt Trigger is a mono­ lithic complementary MOS CMOS integrated circuit con­ structed with N- and P-channel enhancement transistors.


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    PDF MM54C14/MM74C14 MM74C14N

    BC253C

    Abstract: ITT Semiconductor BC263C BC261B BC107 to92 BC107 characteristic BC107 itt kh472m x1y2 250v transistor ITT bc171 BC252A
    Text: ITT Semiconductors PNP Transistors P N P Small Signal Silicon Transistors Epoxy Package TO-92 and Metal Can (TO-18). For general purpose applications. Range complementary to BC107/BC171 series. O u tlin e D ra w in g M o . 73 ap p lie s fo r T O -92 types.


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    PDF BC107/8C171 300mW BC251A 31230C BC251B 1231A BC252A 31232X BC252B 31233H BC253C ITT Semiconductor BC263C BC261B BC107 to92 BC107 characteristic BC107 itt kh472m x1y2 250v transistor ITT bc171