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    IW4093B Search Results

    IW4093B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IW4093B Unknown Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS Original PDF
    IW4093BD Integral Quad 2-input NAND gate schmitt trigger, high-voltage silicon-gate CMOS Original PDF
    IW4093BN Integral Quad 2-input NAND gate schmitt trigger, high-voltage silicon-gate CMOS Original PDF

    IW4093B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IW4093BD

    Abstract: IW4093BN IW4093B
    Text: TECHNICAL DATA IW4093B Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS The IW4093B consists of four Schmitt-trigger circuits. Each circuit functions as a two-input NAND gate with Schmitt-trigger action on both inputs. The gate switches at different points for positive- and


    Original     		IW4093B IW4093B IW4093BD IW4093BN PDF

    IW4093BN

    Abstract: IW4093BD IW4093B
    Text: TECHNICAL DATA IW4093B Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS The IW4093B consists of four Schmitt-trigger circuits. Each circuit functions as a two-input NAND gate with Schmitt-trigger action on both inputs. The gate switches at different points for


    Original     		IW4093B IW4093B IW4093BN IW4093BD PDF

    IW4093BD

    Abstract: IW4093B IW4093BN iw4093
    Text: TECHNICAL DATA IW4093B Quad 2-Input NAND Schmitt Triggers High-Voltage Silicon-Gate CMOS The IW4093B consists of four Schmitt-trigger circuits. Each circuit functions as a two-input NAND gate with Schmitt-trigger action on both inputs. The gate switches at different points for positive- and negativegoing signals. The difference between the positive voltage VТ+ and the


    Original     		IW4093B IW4093B 012AB) IW4093BD IW4093BN iw4093 PDF

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


    Original     		PDF