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    IX 3368 Search Results

    IX 3368 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    AGP4233-683ME Coilcraft Inc General Purpose Inductor, 68uH, 20%, Ferrite-Core, Visit Coilcraft Inc
    AGP4233-682ME Coilcraft Inc General Purpose Inductor, 6.8uH, 20%, Ferrite-Core Visit Coilcraft Inc
    65863-368LF Amphenol Communications Solutions Quickie Header, Wire to Board Connector, Double Row, 10 Positions, 2.54 mm (0.1 in.), Vertical, Eject Latch Header 15u\\/0.38um min. Au/GXT Plating. Visit Amphenol Communications Solutions

    IX 3368 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10 PDF

    J113-18

    Abstract: U1897-18 2N5653-54 PN4091
    Text: GATE IS BACKSIDE CONTACT s n-channel JFETs . designed for . S ilic o n ix • Analog Switches B E N E F IT S : ■ Commutators • ■ Choppers ■ Integrator Reset Switch No O ffset or Error Voltages Generated by Closed Switch. Purely Resistive. High Isolation Resistance From


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    AN73-1 fet

    Abstract: jfet AN73 2n4117 jfet VCR2N equivalent 2N3458 low noise dual P-Channel JFET 2N3909 siliconix AN73-7 2N5909CHP 2n4117 equivalent
    Text: VCR7N VCR5P VCR4N VCR3P voltage-control led resistor FETs designed for . . . nt •Small Signal Attenuators ■ Filters ■Am plifier Gain Control ■Oscillator Amplitude Control o S itò B o n ix rfo rm a n c e P C PE T O -18 Set Section 7 -*C g c H^ O S


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    2N3458

    Abstract: 2N3459 2N3460 2N3368-70 2N3436-8 2N3458-60 2N4338 2N4338-41 2N5196-9 2N5545-47
    Text: a S ilic o n ix Performance Curves N P See Sectiori 5 2N3459 • Sm all-Signal Low Noise Amplifiers 2N3458 n-channel JFETs designed for . BENEFITS • Operates from High Supply Voltages BV q s s > 5 0 V 2N3460 TO-18 See Section 7 •ABSOLUTE M AXIM UM RATINGS 25°C


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    2N3458 2N3459 2N3460 2N3458 2N3459 2N3460 2N3368-70 2N3436-8 2N3458-60 2N4338 2N4338-41 2N5196-9 2N5545-47 PDF

    2n3458

    Abstract: 2N3368-70 2N3458-60 2N3436-8 PN4302 U231 PN4303 equivalent J204-18 PN4304 2N4338-41
    Text: PN4302 PN4303 P N 4 30 4 PN4302-18 PN4303-18 PN4304-18 n-channel JFETs designed fo r H . S ilic o n ix Perform ance Curves N P See Section 5 • General Purpose Amplifiers B EN EFITS • Low Cost • High Input Impedance I q = 35 pA Typically Low Noise ■¡in = 5 n VA /Ffz Typically @ 1 kHz


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    J201 equivalent

    Abstract: 2N3368 2N4338-41 2N3368-70 2N3436-8 2N3458-60 2N4338 2N5196-9 2N5545-47 U231-5
    Text: J204 J204-18 n-channel JFETs designed fo r s S ilic o n ix . Performance Curves NP See Section 5 • G en eral Purpose Sw itching B EN EFITS • Very Low Leakage T O -9 2 See Se ction 7 ABSOLUTE M A X IM U M R A TIN G S 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) .—25V


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    2N4338-41

    Abstract: 2N5196-9 U231-35 2N3368 J201 equivalent 2N4338 2N5196 2N5199CHP 2N5545-47 2N5547CHP
    Text: s monolithic dual n-channel JFET Siliconix designed f o r . . . • ■ Low and Medium Frequency A m pli­ B E N E FIT S: fiers • M inim um System Error and Calibra­ tion 5 m V Offset M aximum I2N 51 96 • Low D rift W ith Temperature 5 /uV/°C Maximum 2N 5196)


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    2N5196) 2N5196-9, 2N5545-47, U231-35 2N5199CHP, U232CHP-35CHP 2N5547CHP 2N4338-41 2N5196-9 2N3368 J201 equivalent 2N4338 2N5196 2N5199CHP 2N5545-47 2N5547CHP PDF

    2N3369

    Abstract: 2N3370 JFET 2N3369 2N3368 2N3368-70 J201 equivalent 2N3436-8 2N3458-60 2N4338 2N4338-41
    Text: 2N 3370 2N3369 Sm all-Signal Low P ow er Applications 2N3368 n-channel JFETs aesignea ?or • • • Siliconix Performance Curves NP see sections TO-18 See Section 7 ‘ ABSOLUTE M AXIM UM RATINGS 25°C Gate-Drain or Gate-Source Voltage (Note 1) . . . .-4 0 V


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    -65to 2N3368 2N3369 2N3370 2N3369 2N3370 JFET 2N3369 2N3368 2N3368-70 J201 equivalent 2N3436-8 2N3458-60 2N4338 2N4338-41 PDF

    NEC uPD70325

    Abstract: NEC V25 70320 uPD79011 nec v25 ali m 3329 SA160M UPD70325-10 murata hfs V25TM hJST
    Text: NEC V25/V35 FAMILY MPD70320 V25 ,70322,70325(V25+),70327(V25S),79011 |jPD70330(V35),70332,70335(V35+),70337(V35S),79021 V25 /V35™ FAMILY 16/8-BIT SINGLE CHIP MICROCOMPUTER The V 2 5 /V 3 5 family members are single chip microcomputers integrating a 16-bit


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    V25/V35 uPD70320 uPD70322 uPD70325 uPD70327 uPD79011 uPD70330 uPD70332 uPD70335 uPD70337 NEC uPD70325 NEC V25 70320 nec v25 ali m 3329 SA160M UPD70325-10 murata hfs V25TM hJST PDF

    ix 3368

    Abstract: logic selection guide
    Text: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for


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    SN74S1053 16-BIT SDLS017A 300-mil 18rmination SN74S1053DBR SN74S1053DW ix 3368 logic selection guide PDF

    bt485

    Abstract: BT485KPJ135 t484
    Text: Advance Information This document contains information on a product under development. The parametric information contains target parameters and is subject to change. B t4 8 5 Distinguishing Features Applications 135, 110, 85, 75 MHz Pipelined Operation 8:1, 4:1, 2:1, 1:1 Multiplexed Pixel Ports


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    84-pin 10-percent Bt485 t485K PJ135 bt485 BT485KPJ135 t484 PDF

    Brooktree BT885

    Abstract: Brooktree bt885 110 mhz bt812 equivalent BT812 bt885 67VO interlace
    Text: MW 21 1993 Advance This document contains information on a product under development. The parametric information contains target parameters that are subject to change. Distinguishing Features • Three 256 x 8 Color Palette RAMs • 135 and 110 MHz Pipelined


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    64-bit Bt885 Bt885_ 160-p Brooktree BT885 Brooktree bt885 110 mhz bt812 equivalent BT812 bt885 67VO interlace PDF

    mc68701 probug

    Abstract: MC144100 M68KVM02 user manual m6809 EXORCISER motorola MC146805G2 MC1468705G2 AN/mc68701 probug
    Text: Motorola’s Microcomputer Families i Reliability Data Sheets Mechanical Data E Technical Training Memory Products Logic and Special Function Products Development Systems and Board-Level Products E M motorola MICROCOMPUTERS Prepared by Technical Information Center


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    MM12A 10-Card mc68701 probug MC144100 M68KVM02 user manual m6809 EXORCISER motorola MC146805G2 MC1468705G2 AN/mc68701 probug PDF

    BU428A

    Abstract: ix 3368 BU428 BU426-BU426A BU426 BU-428 ic ix 3368
    Text: MOTOROLA SC 1HE D I t3b?aS4 0004013 b | XSTRS/R F 7^ 33 '!$ MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE NPN SILICON TRANSISTOR 6 A M PERES . , . designed for use in the switched m ode power supply o f 9 0 ° and 1 1 0 ° colour television receivers.


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    BU426 BU426A BU428A ix 3368 BU428 BU426-BU426A BU-428 ic ix 3368 PDF

    FD2S

    Abstract: ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649
    Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior


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    STD80/STDM80 P1149 FD2S ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649 PDF

    dl2d

    Abstract: AO222 AO211 LD1A STD110 Samsung 546 FD2QD2
    Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5


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    MDL110 STD110 PLL2013X dl2d AO222 AO211 LD1A STD110 Samsung 546 FD2QD2 PDF

    Samsung ASIC

    Abstract: ix 3368 OA321D2 AO4111 AO2222 oa211 diode STD111 LD2D2 SCG16
    Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change STD111 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5


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    STD111 PLL2013X Samsung ASIC ix 3368 OA321D2 AO4111 AO2222 oa211 diode STD111 LD2D2 SCG16 PDF

    ANA 618* voltage regulator

    Abstract: L103001 ix 3368 ana 618 equivalent
    Text: Btl03 Distinguishing Features Applications High-Resolution Color Graphics CAE/CAD/CAM Image Processing Video Reconstruction 75, 30 MHz Operation Triple 4-bit D/A Converters ±1/16 LSB Differential Linearity Error +1/8 LSB Integral Linearity Error RS-343A/RS-170-Compatible


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    Btl03 RS-343A/RS-170-Compatible 28-pin BU03BC B1103KC30 BU03EVM ANA 618* voltage regulator L103001 ix 3368 ana 618 equivalent PDF

    IR P 648 H

    Abstract: MC10137 MC10141 MC10537 MCM10140 MCM10142 MCM10143 MCM10144 MCM10145 MCM10147
    Text: 10.000 LOGIC DIAGRAMS N u m b e r s in p a r e n t h e s i s d e n o t e p i n n u m b e r s f o r F p a c k a g e Case 6 5 0 FUNCTIONS AND CHARACTERISTICS (c o n tin u e d ) Type Function U n iv e rs a l D e c a d e C o u n te r B i- Q u in a r y C o u n t e r


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    MC10137 MC10537 64-Bit MCM10140 MC10141 MCM10142 MCM10143 256-Bit MCM10144 IR P 648 H MCM10145 MCM10147 PDF

    samsung UC 40207

    Abstract: samsung 943 UC 40207 dupont 943
    Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. Northeast North Central Northwest 3 6 5 5 N o rth First S tre e t 3 0 0 P a rk B o u le vard 1 1 9 R u s s e ll S tre e t S an José, C A 951 34 S u ite 2 1 0 L itlleto n , M A 0 1 4 6 0 T E L : 4 0 0 9 5 4 -7 0 0 0


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    516J-273-5500 samsung UC 40207 samsung 943 UC 40207 dupont 943 PDF

    GM300

    Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 GM300 CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn PDF

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


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    2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code PDF

    TTK SG 2368

    Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
    Text: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A


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    AP-55A PR00UCT. MCS-48 /TP-11/1179/5K TTK SG 2368 BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf PDF

    Untitled

    Abstract: No abstract text available
    Text: ESI IS22C040/041/042 32 to 40 SEC INSTANT VOICE ROM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES STP stop pulse generated at end of playback • Voice length at - 8 KHz sam pling is 32 seconds BUSY signal for CPU control - 6 KHz sam pling is 40 seconds Two LEDs flash at 3 Hz interval


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    IS22C040/041/042 16-pin IS22C041) IS22C011/020 20-pin IS22C042) VP008-0B PDF