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IXAN0041 Abstract: 2a 200v schottky diode Schottky diode TO220 IXYSVUM25-E power Diode 20A schottky diode ST DGS10-018A DGS10-025A ST Low Forward Voltage Schottky Diode DGS20-025A Text: EPE Conference, Lausanne, 1999 IXAN0041 1 Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH Postfach 1180 68619 Lampertheim, Germany Fax: .49/6206/503-579 E-Mail: A.Lindemann@IXYS.de St. Knigge Ferdinand Braun Institute	Original	PDF	IXAN0041 IXAN0041 2a 200v schottky diode Schottky diode TO220 IXYSVUM25-E power Diode 20A schottky diode ST DGS10-018A DGS10-025A ST Low Forward Voltage Schottky Diode DGS20-025A

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IXAN0041

Abstract: 2a 200v schottky diode Schottky diode TO220 IXYSVUM25-E power Diode 20A schottky diode ST DGS10-018A DGS10-025A ST Low Forward Voltage Schottky Diode DGS20-025A
Text: EPE Conference, Lausanne, 1999 IXAN0041 1 Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH Postfach 1180 68619 Lampertheim, Germany Fax: .49/6206/503-579 E-Mail: A.Lindemann@IXYS.de St. Knigge Ferdinand Braun Institute

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IXAN0041 IXAN0041 2a 200v schottky diode Schottky diode TO220 IXYSVUM25-E power Diode 20A schottky diode ST DGS10-018A DGS10-025A ST Low Forward Voltage Schottky Diode DGS20-025A