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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M	Original	PDF	IXBF28N300 100ms 28N300

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M

Original

PDF

IXBF28N300 100ms 28N300