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IXYS Corporation IXBF32N300 IGBT 3000V 40A ISOPLUSI4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBF32N300	Tube			1	1 $85.59 10 $85.59 100 $76.0508 1000 $76.0508 10000 $76.0508	Buy Now
Mouser Electronics	IXBF32N300					1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXBF32N300	Tube			300	1 - 10 - 100 - 1000 $79.62 10000 $79.62	Buy Now
Littelfuse Inc IXBF32N300 Disc Igbt Bimsft-Veryhivolt I4-Pak Iso+/ Tube \|Littelfuse IXBF32N300
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBF32N300	Bulk			250	1 - 10 - 100 $79.71 1000 $79.71 10000 $79.71	Buy Now
IXYS Integrated Circuits Division IXBF32N300 IGBT DIS.DIODE SINGLE 22A 3000V BIMOSFET ISOPLUSI4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXBF32N300					1 $143.39293 10 $143.39293 100 $136.5647 1000 $136.5647 10000 $136.5647	Get Quote

IXBF32N300 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXBF32N300		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 40A 160W ISOPLUSI4		Original	PDF

IXBF32N300 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V IXBF32N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	PDF	IXBF32N300 32N300
IXBF32N300 Abstract: B32N ic901 32N300 32N30 Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF32N300 VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	PDF	IXBF32N300 32N300 IXBF32N300 B32N ic901 32N30
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	PDF	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	PDF	E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250