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    IXBK55N300 Search Results

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    IXBK55N300 Price and Stock

    IXYS Corporation IXBK55N300

    IGBT 3000V 130A 625W TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBK55N300 Tube 846 1
    • 1 $92.84
    • 10 $92.84
    • 100 $83.67
    • 1000 $83.67
    • 10000 $83.67
    		Buy Now
    Mouser Electronics IXBK55N300
    • 1 $104.76
    • 10 $95.65
    • 100 $89.23
    • 1000 $89.23
    • 10000 $89.23
    		Get Quote
    Future Electronics IXBK55N300 Tube 3,000 44 Weeks 1
    • 1 $86.14
    • 10 $83.92
    • 100 $82.03
    • 1000 $82.03
    • 10000 $82.03
    		Buy Now
    Quest Components IXBK55N300 3
    • 1 $128.745
    • 10 $122.3078
    • 100 $122.3078
    • 1000 $122.3078
    • 10000 $122.3078
    		Buy Now
    TTI IXBK55N300 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $85.34
    • 10000 $85.34
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    TME IXBK55N300 25 1
    • 1 $118.77
    • 10 $99.16
    • 100 $95.67
    • 1000 $95.67
    • 10000 $95.67
    		Buy Now
    New Advantage Corporation IXBK55N300 20 1
    • 1 -
    • 10 $200.77
    • 100 $187.39
    • 1000 $187.39
    • 10000 $187.39
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    Littelfuse Inc IXBK55N300

    Igbt, 3Kv, 130A, 150Deg C, 625W; Continuous Collector Current:130A; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:625W; Collector Emitter Voltage Max:3Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXBK55N300
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBK55N300 Bulk 336 1
    • 1 $102.69
    • 10 $93.86
    • 100 $84.8
    • 1000 $84.8
    • 10000 $84.8
    		Buy Now

    IXYS Integrated Circuits Division IXBK55N300

    IGBT DIS.DIODE SINGLE 55A 3000V BIMOSFET TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBK55N300 25
    • 1 $148.60146
    • 10 $148.60146
    • 100 $141.5252
    • 1000 $141.5252
    • 10000 $141.5252
    		Buy Now

    IXBK55N300 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBK55N300 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 130A 625W TO264 Original PDF

    IXBK55N300 Datasheets Context Search

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    IXBK55N300

    Abstract: IXBX 55N300 IXBX55N300
    Text: IXBK55N300 IXBX55N300 High Voltage, High Gain BiMOSFETTM VCES IC110 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK55N300 IXBX55N300 IC110 O-264 IC110 PLUS247 100ms IXBX 55N300 IXBX55N300

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK55N300 IXBX55N300 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXBK55N300 IXBX55N300 O-264 100ms 55N300

    IXBK55N300

    Abstract: IXBX55N300 55n30 transistor TO-264 Outline Dimensions IXBX 55N300 b55n3 PLUS247
    Text: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBK55N300 IXBX55N300 VCES IC110 VCE sat Monolithic Bipolar MOS Transistor = 3000V = 55A ≤ 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK55N300 IXBX55N300 IC110 O-264 55N300 IXBK55N300 IXBX55N300 55n30 transistor TO-264 Outline Dimensions IXBX 55N300 b55n3 PLUS247

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


    Original     		PDF E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250