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    IXBN 75N170A Search Results

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    IXBN 75N170A Price and Stock

    IXYS Corporation IXBN75N170A

    IGBT MOD 1700V 75A 625W SOT227B
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    DigiKey IXBN75N170A Tube 10
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    TME IXBN75N170A 2 1
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    IXYS Integrated Circuits Division IXBN75N170A

    IGBT MOD.DIODE SINGLE 42A 1700V BIMOSFET SOT227B
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    Ozdisan Elektronik IXBN75N170A
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    IXBN 75N170A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBN 75N170A IXYS BIMOSFET Monolithic Bipolar MOS Transistor Original PDF
    IXBN75N170A IXYS Bipolar MOS Transistor Original PDF

    IXBN 75N170A Datasheets Context Search

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    98938

    Abstract: No abstract text available
    Text: Advance Technical Information IXBN 75N170A VCES IC25 VCE sat tfi BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM


    Original
    PDF 75N170A OT-227 E153432 728B1 98938