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    IXBT20N300HV Search Results

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    IXBT20N300HV Price and Stock

    IXYS Corporation IXBT20N300HV

    IGBT 3000V 50A TO-268AA
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    DigiKey IXBT20N300HV Tube 30
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    IXBT20N300HV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBT20N300HV IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 50A 250W TO268 Original PDF

    IXBT20N300HV Datasheets Context Search

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    Abstract: No abstract text available
    Text: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBT20N300HV IC110 O-268 20N300 PDF

    B20N30

    Abstract: IXBT20N300HV 20N30
    Text: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBT20N300HV IC110 IC110 O-268 20N300 B20N30 IXBT20N300HV 20N30 PDF