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    Littelfuse Inc IXDN609SIATR

    IC GATE DRVR LOW-SIDE 8SOIC
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    DigiKey IXDN609SIATR Cut Tape 24,078 1
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    IXDN609SIATR Digi-Reel 24,078 1
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    IXDN609SIATR Reel 22,000 2,000
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    Arrow Electronics IXDN609SIATR 24,000 8 Weeks 2,000
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    IXDN609SIATR 2,000 8 Weeks 2,000
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    IXDN609SIATR Cut Strips 1,375 8 Weeks 1
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    Newark IXDN609SIATR Cut Tape 1,932 1
    • 1 $0.759
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    RS IXDN609SIATR Bulk 8 Weeks 2,000
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    Quest Components IXDN609SIATR 1,600
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    Chip1Stop IXDN609SIATR Cut Tape 990
    • 1 $0.99
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    CoreStaff Co Ltd IXDN609SIATR 2,000
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    Littelfuse Inc IXDN604SIATR

    IC GATE DRVR LOW-SIDE 8SOIC
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    DigiKey IXDN604SIATR Cut Tape 9,144 1
    • 1 $3.03
    • 10 $1.924
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    IXDN604SIATR Digi-Reel 9,144 1
    • 1 $3.03
    • 10 $1.924
    • 100 $1.3068
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    IXDN604SIATR Reel 8,000 2,000
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    Newark IXDN604SIATR Cut Tape 1,650 1
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    RS IXDN604SIATR Bulk 8 Weeks 2,000
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    Quest Components IXDN604SIATR 1,560
    • 1 $3.992
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    • 1000 $1.497
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    Chip1Stop IXDN604SIATR Cut Tape 988
    • 1 $1.68
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    • 100 $1.12
    • 1000 $0.936
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    CoreStaff Co Ltd IXDN604SIATR 1,950
    • 1 $2.801
    • 10 $1.573
    • 100 $1.037
    • 1000 $0.998
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    New Advantage Corporation IXDN604SIATR 28,000 1
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    Littelfuse Inc IXDN604PI

    IC GATE DRVR LOW-SIDE 8DIP
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    DigiKey IXDN604PI Tube 6,167 1
    • 1 $2.41
    • 10 $1.568
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    Verical IXDN604PI 2,000 50
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    IXDN604PI 1,000 45
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    IXDN604PI 137 17
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    RS IXDN604PI Bulk 8 Weeks 50
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    Quest Components IXDN604PI 800
    • 1 $3.039
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    • 1000 $1.6715
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    Chip1Stop IXDN604PI Tube 137
    • 1 $1.73
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    • 100 $1.02
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    CoreStaff Co Ltd IXDN604PI 1,000
    • 1 $2.815
    • 10 $2.111
    • 100 $1.126
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    Littelfuse Inc IXDN630YI

    IC GATE DRVR LOW-SIDE TO263-5
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    DigiKey IXDN630YI Tube 4,618 1
    • 1 $9.57
    • 10 $8.644
    • 100 $7.1565
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    Verical IXDN630YI 750 50
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    IXDN630YI 475 9
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    IXDN630YI 250 2
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    • 100 $5.2888
    • 1000 $5.0747
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    RS IXDN630YI Bulk 8 Weeks 50
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    CoreStaff Co Ltd IXDN630YI 475
    • 1 $11.568
    • 10 $6.161
    • 100 $5.66
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    Littelfuse Inc IXDN602SI

    IC GATE DRVR LOW-SIDE 8SOIC
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    DigiKey IXDN602SI Tube 3,377 1
    • 1 $2.74
    • 10 $1.793
    • 100 $1.2673
    • 1000 $1.05138
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    RS IXDN602SI Bulk 8 Weeks 100
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    IXDN Datasheets (98)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXDN402 IXYS 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Original PDF
    IXDN402PI IXYS 2 Amp dual low-side ultrafast MOSFET driver Original PDF
    IXDN402PI IXYS Power Intergrated ICs Original PDF
    IXDN402SI IXYS Power Intergrated ICs Original PDF
    IXDN402SI IXYS 2 Amp dual low-side ultrafast MOSFET driver Original PDF
    IXDN402SI-16 IXYS 2 Amp dual low-side ultrafast MOSFET driver Original PDF
    IXDN402SI-16 IXYS Power Intergrated ICs Original PDF
    IXDN402SIA IXYS Power Intergrated ICs Original PDF
    IXDN402SIA-16 IXYS Power Intergrated ICs Original PDF
    IXDN404 IXYS 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Original PDF
    IXDN404 IXYS 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Original PDF
    IXDN404PI IXYS Power Intergrated ICs Original PDF
    IXDN404PI IXYS 4 Amp dual low-side ultrafast MOSFET driver Original PDF
    IXDN404SI IXYS Power Intergrated ICs Original PDF
    IXDN404SI IXYS 4 Amp dual low-side ultrafast MOSFET driver Original PDF
    IXDN404SI-16 IXYS Power Intergrated ICs Original PDF
    IXDN404SI-16 IXYS 4 Amp dual low-side ultrafast MOSFET driver Original PDF
    IXDN404SIA IXYS Power Intergrated ICs Original PDF
    IXDN404SIA-16 IXYS Power Intergrated ICs Original PDF
    IXDN409CI IXYS 9 Amp low-side ultrafast MOSFET driver Original PDF

    IXDN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXDI414PI

    Abstract: IXDN414PI IXDI414SI 12.5W bypass transistor smps circuit diagrams 12v 5a N414 414PI IXDI414CI
    Text: IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire


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    PDF IXDN414PI N414CI N414YI N414SI IXDI414PI I414CI I414YI I414SI IXDI414/IXDN414 IXDI414SI 12.5W bypass transistor smps circuit diagrams 12v 5a N414 414PI IXDI414CI

    IXDD409CI

    Abstract: IXDD409PI IXDD409SI IXDD409YI smps LM339
    Text: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.


    Original
    PDF IXDD409PI 409SI 409YI 409CI IXDI409PI IXDN409PI IXDD409CI IXDD409SI IXDD409YI smps LM339

    55N120D1

    Abstract: No abstract text available
    Text: IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G E G E E IXDN 55N120 Preliminary Data E IXDN 55N120 D1 miniBLOC, SOT-227 B E153432 E Symbol Conditions


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    PDF 55N120 55N120 OT-227 E153432 IXDN55N120 D-68623 55N120D1

    IXDD402

    Abstract: No abstract text available
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak


    Original
    PDF IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 D-68623; IXDD402

    IXDF502D1

    Abstract: No abstract text available
    Text: IXDF502 / IXDI502 / IXDN502 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 2 Amps • High Peak Output Current: 2A Peak


    Original
    PDF IXDF502 IXDI502 IXDN502 1000pF IXDF502, IXDN502 IXDF502D1

    IXDF502D1

    Abstract: No abstract text available
    Text: IXDF502 / IXDI502 / IXDN502 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 2 Amps • High Peak Output Current: 2A Peak


    Original
    PDF IXDF502 IXDI502 IXDN502 1000pF IXDF502, IXDN502 IXDF502D1

    ixdd402

    Abstract: IXDN402SI IXDF402SIA IXDN402 IXDN402PI IXDN402SIA SOIC-16
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak


    Original
    PDF IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 ixdd402 IXDN402SI IXDF402SIA IXDN402PI IXDN402SIA SOIC-16

    IXDN0014

    Abstract: IXCP02M35 IXCY01N90E IXCP01N90E IXCP10M35 IXCP30M35A IXCP50M35 IXCP50M35A IXCP100M45 IXCY02M35
    Text: 3540 Bassett Street Santa Clara, CA 95054, USA Phone: +1-408-982-0700 Fax: +1-408-727-7087 IXDN0014 July 28, 2004. End of life some non-switchable AC and DC current regulators Description of change: End of Life for below part types in the current regulator family.


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    PDF IXDN0014 IXCP30M35A IXCY02M35 IXCY20M35A IXCY20M35 IXCY10M35A IXCP60M35 IXCY60M35 IXCP50M35A IXCP50M35 IXDN0014 IXCP02M35 IXCY01N90E IXCP01N90E IXCP10M35 IXCP30M35A IXCP50M35 IXCP50M35A IXCP100M45 IXCY02M35

    ixys ixdn 75 n 120

    Abstract: 75N120 IXDN75N120 160mJ
    Text: IXDN 75N120 High Voltage IGBT VCES = 1200 V = 150 A IC25 VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Maximum Ratings E = Emitter ①, G = Gate, Symbol Conditions VCES TJ = 25°C to 150°C 1200


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    PDF 75N120 OT-227 E153432 IXDN75N120 ixys ixdn 75 n 120 75N120 IXDN75N120 160mJ

    Untitled

    Abstract: No abstract text available
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak


    Original
    PDF IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15

    75N120

    Abstract: No abstract text available
    Text: IXDN 75N120 High Voltage IGBT VCES = 1200 V IC25 = 150 A VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kW


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    PDF 75N120 OT-227 E153432 IXDN75N120 75N120

    Untitled

    Abstract: No abstract text available
    Text: IXDN 55N120 D1 VCES = 1200 V = 100 A IC25 VCE sat typ = 2.3 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR


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    PDF 55N120 OT-227 E153432 IXDN55N120

    IXDN0018

    Abstract: MOSFET and IGBT die and 150 mm wafer products IGBT die
    Text: IXDN0018 3540 Bassett Street Santa Clara, CA 95054, USA Phone: +1-408-982-0700 Fax: +1-408-727-7087 October 16, 2003 MOSFET and IGBT die and 150 mm wafer products Customer: Various IXYS product type: MOSFET and IGBT die and 150 mm wafer products. Description of changes:


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    PDF IXDN0018 IXDN0018 MOSFET and IGBT die and 150 mm wafer products IGBT die

    IXDN0015

    Abstract: VUB160: New IGBT and Diode in dynamic brake section VUB120-12NO1 VUB120-12NO2 VUB160-16NO1 VUB120-16NO1 VUB120-16NO2 VUB160-12NO1 VUB160-12NO2 VUB160-16NO2
    Text: IXDN0015 VUB120/VUB160: New IGBT and Diode in dynamic brake section Customer: all IXYS product type: old: VUB120-12NO1, VUB120-16NO1, VUB160-12NO1, VUB160-16NO1 new: VUB120-12NO2, VUB120-16NO2, VUB160-12NO2, VUB160-16NO2 Description of change: 1 new IGBT for the brake unit


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    PDF IXDN0015 VUB120/VUB160: VUB120-12NO1, VUB120-16NO1, VUB160-12NO1, VUB160-16NO1 VUB120-12NO2, VUB120-16NO2, VUB160-12NO2, VUB160-16NO2 IXDN0015 VUB160: New IGBT and Diode in dynamic brake section VUB120-12NO1 VUB120-12NO2 VUB160-16NO1 VUB120-16NO1 VUB120-16NO2 VUB160-12NO1 VUB160-12NO2 VUB160-16NO2

    IXDI414

    Abstract: ixd414 IXDN414 IXDN414PI IXDI414PI IXDN414SI IXDI414CI
    Text: IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire


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    PDF IXDN414PI N414CI N414YI N414SI IXDI414PI I414CI I414YI I414SI IXDI414/IXDN414 IXDN414 IXDI414 ixd414 IXDN414SI IXDI414CI

    IXDD409

    Abstract: 2N7000 MOSFET protection smps LM339 IXDD409PI IXDI409PI IXDN409 IXDN409PI IXYS 409SI 92-0002 IXDD409CI
    Text: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Amp Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected


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    PDF IXDD409PI 409SI 409YI 409CI IXDI409PI 409CI IXDN409PI IXDD409 2N7000 MOSFET protection smps LM339 IXDN409 IXYS 409SI 92-0002 IXDD409CI

    IXDN404

    Abstract: IXDD404 EVDN404 IXDI404PI mosfet driver dip 16 IXDD404PI IXDN404PI SOT-227 pcb EVDD404 IXDI404
    Text: EVDD404 IXDD404, IXDI404 And IXDN404 Gate Driver IC Evaluation Board General Description The EVDD404 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the IXYS IXDD404, IXDI404 and IXDN404 gate drive ICs, as well as to


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    PDF EVDD404 IXDD404, IXDI404 IXDN404 EVDD404 SO-16 SI-16) IXDD404 EVDN404 IXDI404PI mosfet driver dip 16 IXDD404PI IXDN404PI SOT-227 pcb

    IXDI509D1

    Abstract: No abstract text available
    Text: IXDI509 / IXDN509 9 Ampere Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up protected up to 9 Amps • High 9A peak output current • Wide operating range: 4.5V to 30V


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    PDF IXDI509 IXDN509 1800pF IXDN509 Edisonstrasse15 D-68623; IXDI509D1

    ixd414

    Abstract: IXDN414 414PI N414 IXDI414PI IXDN414PI smps circuit diagrams 12v 5a IXDI414CI
    Text: IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire


    Original
    PDF IXDN414PI N414CI N414YI N414SI IXDI414PI I414CI I414YI I414SI IXDI414/IXDN414 IXDN414 ixd414 414PI N414 smps circuit diagrams 12v 5a IXDI414CI

    IXDD409PI

    Abstract: 409YI DD409 IXDD409 IXDI409PI IXDN409 IXDN409PI 409CI dn409 IXDN409SI
    Text: IXDD409PI / 409SI / 409YI / 409CI IXDI409PI / 409SI / 409YI / 409CI IXDN409PI / 409SI / 409YI / 409CI 9 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes.


    Original
    PDF IXDD409PI 409SI 409YI 409CI IXDI409PI 409CI IXDN409PI DD409 IXDD409 IXDN409 dn409 IXDN409SI

    Untitled

    Abstract: No abstract text available
    Text: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 4A Peak


    Original
    PDF IXDN404 IXDI404 IXDF404 1800pF IXDN404/IXDI404/IXDF404 IXDD404PI IXDD404SI-CT

    IXDF504D1

    Abstract: No abstract text available
    Text: IXDF504/ IXDI504 / IXDN504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps • High Peak Output Current: 4A Peak


    Original
    PDF IXDF504/ IXDI504 IXDN504 1800pF IXDF504, IXDN504 IXDF504 IXDF504D1

    75N120A

    Abstract: 75N120 IXDN75N120A 1TM4 MI1200 15i2 0504N
    Text: □ IXYS IXDN 75N120A High Voltage IGBT V CES 1200 V ^C25 120 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES ^ = 25°C to 150°C 1200 V V CGR ^ = 25°C to 150°C; RGE = 1 M£i 1200 V V GES Continuous


    OCR Scan
    PDF 75N120A OT-227 75N120 IXDN75N120A 1TM4 MI1200 15i2 0504N

    75N120

    Abstract: 0504N IXDN75N120A
    Text: □IXYS IXDN 75N120A High Voltage IGBT V CES ^C25 V CE sat typ 1200 V 120 A 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 1200 V mini BLOC, SOT-227 B


    OCR Scan
    PDF 75N120A OT-227 75N120 0504N IXDN75N120A