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    IXFK 80N50P Search Results

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    IXFK 80N50P Price and Stock

    Littelfuse Inc IXFK80N50P

    MOSFET N-CH 500V 80A TO264AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFK80N50P Tube 1
    • 1 $23.18
    • 10 $23.18
    • 100 $23.18
    • 1000 $23.18
    • 10000 $23.18
    		Buy Now
    Newark IXFK80N50P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $14.36
    • 10000 $14.36
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    IXYS Corporation IXFK80N50P

    MOSFETs 500V 80A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFK80N50P 166
    • 1 $23.89
    • 10 $18.98
    • 100 $16.43
    • 1000 $13.69
    • 10000 $13.69
    		Buy Now
    TTI IXFK80N50P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $13.7
    • 10000 $13.7
    		Buy Now
    TME IXFK80N50P 22 1
    • 1 $20.86
    • 10 $20.86
    • 100 $16.34
    • 1000 $15.85
    • 10000 $15.85
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    IXFK 80N50P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK80N50P IXYS PolarHV HiPerFET Power MOSFET Original PDF

    IXFK 80N50P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80N50P

    Abstract: IXFK 80N50P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF 80N50P O-264 80N50P IXFK 80N50P PLUS247

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF 80N50P 80N50P O-264 PLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original     		PDF 80N50P

    80N50P

    Abstract: IXFK 80N50P 80N50 PLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM


    Original     		PDF 80N50P 80N50P IXFK 80N50P 80N50 PLUS247

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2