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    IXFK38N80Q2 Price and Stock

    IXYS Corporation IXFK38N80Q2

    MOSFET N-CH 800V 38A TO264AA
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    New Advantage Corporation IXFK38N80Q2 18 1
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    IXFK38N80Q2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK38N80Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

    IXFK38N80Q2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXFK38N80Q2

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q2-Class VDSS ID25 IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 250ns O-264 IXFK38N80Q2 38N80Q2 8-08-A PDF

    IXFX38N80Q2

    Abstract: IXFK38N80Q2 38N80 IXFN38N80Q2 PLUS247 SOT227B package
    Text: HiPerFETTM Power MOSFETs Q2-Class IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 VDSS ID25 = 800V = 38A Ω ≤ 220mΩ ≤ 250ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 250ns O-264 IXFK38N80Q2 38N80Q2 8-08-A IXFX38N80Q2 38N80 IXFN38N80Q2 PLUS247 SOT227B package PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXFK38N80Q2

    Abstract: ISOPLUS247
    Text: HiPerFETTM MOSFET Q2-Class VDSS ID25 RDS on (Electrically Isolated Back Surface) trr ≤ 250 ns IXFR 38N80Q2 = = = 800 V 28 A Ω 240 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		38N80Q2 IXFK38N80Q2 ISOPLUS247 PDF

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 PDF