IXFL100N50P Search Results

IXFL100N50P Price and Stock

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IXYS Corporation IXFL100N50P MOSFETs tbd Amps 500V 0.06 Ohms Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFL100N50P		296			1 $23.18 10 $23.18 100 $21.14 1000 $21.13 10000 $21.13	Buy Now
Newark	IXFL100N50P	Bulk			300	1 - 10 - 100 - 1000 $22.16 10000 $22.16	Buy Now
Future Electronics	IXFL100N50P	Tube	275	44 Weeks	25	1 - 10 - 100 $20.9 1000 $20.73 10000 $20.73	Buy Now
	IXFL100N50P	Tube		44 Weeks	300	1 - 10 - 100 $20.9 1000 $20.73 10000 $20.73	Buy Now
TTI	IXFL100N50P	Tube			300	1 - 10 - 100 - 1000 $21.14 10000 $21.14	Buy Now
TME	IXFL100N50P				1	1 $34.44 10 $27.31 100 $25.52 1000 $25.52 10000 $25.52	Get Quote

New Advantage Corporation	IXFL100N50P		225		1	1 - 10 - 100 $29.6 1000 $27.63 10000 $27.63	Buy Now

IXFL100N50P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFL100N50P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 70A ISOPLUS264		Original	PDF

IXFL100N50P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
IXFB100N50P Abstract: IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P Text: HIGH CURRENT POLAR HIPERFET POWER MOSFETS N E W P R O D U C T B R I E F SUMMARY TABLE TM TM SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH CURRENT/HIGH POWER APPLICATIONS July 2006 Type B PLUS264 Description IXYS’ New High Current PolarHT™ and PolarHV™ Power MOSFETs bring many benefits to the	Original	PDF	PLUS264 ISOPLUS247TM E153432) IXFB100N50P IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250