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    IXFN 80N50P Search Results

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    IXFN 80N50P Price and Stock

    Littelfuse Inc IXFN80N50P

    MOSFET N-CH 500V 66A SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN80N50P Tube 2,956 1
    • 1 $35.15
    • 10 $31.232
    • 100 $35.15
    • 1000 $35.15
    • 10000 $35.15
    		Buy Now
    Newark IXFN80N50P Bulk 103 1
    • 1 $34.45
    • 10 $30.61
    • 100 $26.77
    • 1000 $26.77
    • 10000 $26.77
    		Buy Now
    Chip1Stop IXFN80N50P Tube 300
    • 1 $33.2
    • 10 $24.9
    • 100 $22.7
    • 1000 $22.7
    • 10000 $22.7
    		Buy Now

    IXYS Corporation IXFN80N50P

    MOSFET Modules 500V 80A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN80N50P 815
    • 1 $34.82
    • 10 $31.23
    • 100 $27.31
    • 1000 $26.3
    • 10000 $26.3
    		Buy Now
    Quest Components IXFN80N50P 56
    • 1 $39.072
    • 10 $39.072
    • 100 $33.2112
    • 1000 $33.2112
    • 10000 $33.2112
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    TTI IXFN80N50P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $23.74
    • 10000 $23.28
    		Buy Now
    New Advantage Corporation IXFN80N50P 783 1
    • 1 -
    • 10 -
    • 100 $49.47
    • 1000 $46.17
    • 10000 $46.17
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    IXFN 80N50P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN80N50P IXYS PolarHV HiPerFET Power MOSFET Original PDF

    IXFN 80N50P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80N50P

    Abstract: IXFN 80N50P E153432
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50P 80N50P IXFN 80N50P E153432

    Untitled

    Abstract: No abstract text available
    Text: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N50P OT-227 E153432 405B2

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous


    Original     		PDF 80N50P

    80N50

    Abstract: 80N50P IXFN 80N50P
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous


    Original     		PDF 80N50P 80N50 80N50P IXFN 80N50P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2