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    IXFN170N30P Search Results

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    IXFN170N30P Price and Stock

    Littelfuse Inc IXFN170N30P

    MOSFET N-CH 300V 138A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN170N30P Tube 58 1
    • 1 $41.79
    • 10 $32.384
    • 100 $32.384
    • 1000 $32.384
    • 10000 $32.384
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    Newark IXFN170N30P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $33.94
    • 10000 $33.94
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    RS IXFN170N30P Bulk 8 Weeks 10
    • 1 -
    • 10 $50.09
    • 100 $50.09
    • 1000 $50.09
    • 10000 $50.09
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    IXYS Corporation IXFN170N30P

    MOSFET Modules 138 Amps 300V 0.018 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN170N30P 270
    • 1 $41.79
    • 10 $32.38
    • 100 $32.38
    • 1000 $32.38
    • 10000 $32.38
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    Future Electronics IXFN170N30P Tube 40 Weeks 300
    • 1 -
    • 10 $32.64
    • 100 $32.16
    • 1000 $31.75
    • 10000 $31.75
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    TTI IXFN170N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $32.38
    • 10000 $32.38
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    TME IXFN170N30P 300 1
    • 1 $50.27
    • 10 $39.96
    • 100 $39.96
    • 1000 $39.96
    • 10000 $39.96
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    New Advantage Corporation IXFN170N30P 300 1
    • 1 -
    • 10 -
    • 100 $89.25
    • 1000 $83.3
    • 10000 $83.3
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    IXYS Integrated Circuits Division IXFN170N30P

    MOSFET MOD.138A 300V N-CH SOT227B HIPERFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFN170N30P 100
    • 1 $65.00988
    • 10 $60.7569
    • 100 $60.7569
    • 1000 $60.7569
    • 10000 $60.7569
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    IXFN170N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN170N30P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 138A SOT-227B Original PDF

    IXFN170N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFN170N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN170N30P 200ns OT-227 E153432 100ms 170N30P

    IXFN170N30P

    Abstract: 170N30P
    Text: Preliminary Technical Information IXFN170N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN170N30P 200ns OT-227 E153432 100ms 170N30P IXFN170N30P