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    IXFT20N100P Search Results

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    IXFT20N100P Price and Stock

    Littelfuse Inc IXFT20N100P

    MOSFET N-CH 1000V 20A TO268
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    DigiKey IXFT20N100P Tube 300
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    • 1000 $8.37513
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    Newark IXFT20N100P Bulk 300
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    RS IXFT20N100P Bulk 8 Weeks 30
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    • 100 $12.95
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    IXYS Corporation IXFT20N100P

    MOSFETs 20 Amps 1000V 1 Rds
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    Mouser Electronics IXFT20N100P
    • 1 $14.21
    • 10 $12.52
    • 100 $10.45
    • 1000 $8.85
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    Future Electronics IXFT20N100P Tube 46 Weeks 300
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    TTI IXFT20N100P Tube 300
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    • 1000 $8.38
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    TME IXFT20N100P 1
    • 1 $14.67
    • 10 $11.58
    • 100 $10.36
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    IXYS Integrated Circuits Division IXFT20N100P

    MOSFET DIS.20A 1000V N-CH TO268(D3PAK) HIPERFET SM
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    Ozdisan Elektronik IXFT20N100P
    • 1 $14.14957
    • 10 $14.14957
    • 100 $13.2239
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    IXFT20N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT20N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 20A TO-268 Original PDF

    IXFT20N100P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH20N100P IXFT20N100P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF IXFH20N100P IXFT20N100P 300ns O-247 20N100P 04-01-08-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH20N100P IXFT20N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000


    Original     		PDF IXFH20N100P IXFT20N100P 300ns O-247 20N100P 3-07-A

    IXFH20N100

    Abstract: IXFH20N100P 20n10 20N100P IXFT20N100P N CHANNEL MOSFET 10A 1000V F20N
    Text: PolarTM Power MOSFET HiPerFETTM IXFH20N100P IXFT20N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF IXFH20N100P IXFT20N100P 300ns O-247 20N100P 04-01-08-B IXFH20N100 IXFH20N100P 20n10 20N100P IXFT20N100P N CHANNEL MOSFET 10A 1000V F20N