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    IXYS Corporation IXFT20N80Q

    MOSFET N-CH 800V 20A TO268
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    IXFT20N80Q Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT20N80Q IXYS 800V HiPerFET power MOSFET Q-class Original PDF

    IXFT20N80Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class VDSS = 800 V = 20 A ID25 RDS on = 0.42 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF O-247 O-268 O-264 IXFH20N80Q IXFK20N80Q IXFT20N80Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF O-247 O-268 IXFH20N80Q IXFT20N80Q O-268 728B1 123B1

    IXFH20N80Q

    Abstract: IXFK20N80Q IXFT20N80Q IXFT20N80
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS on = 0.42 W Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 IXFT20N80

    IXFH20N80Q

    Abstract: IXFK20N80Q IXFT20N80Q
    Text: HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS on = 0.42 Ω IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 728B1 IXFH20N80Q IXFK20N80Q IXFT20N80Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800


    Original     		PDF IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247 728B1

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH20N80Q IXFK20N80Q IXFT20N80Q V DSS = ^D25 ” RDS on 800 V 20 A — 0.42 n t < 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt rr {&• V . os Maximum Ratings


    OCR Scan     		PDF IXFH20N80Q IXFK20N80Q IXFT20N80Q O-247

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50