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    IXFZ520N075T2 Search Results

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    IXFZ520N075T2 Price and Stock

    IXYS Corporation IXFZ520N075T2

    MOSFET N-CH 75V 465A DE475
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFZ520N075T2 Tube 60 1
    • 1 $43.92
    • 10 $43.92
    • 100 $30.6905
    • 1000 $30.6905
    • 10000 $30.6905
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    Mouser Electronics IXFZ520N075T2 170
    • 1 $44.14
    • 10 $39.34
    • 100 $34.52
    • 1000 $34.52
    • 10000 $34.52
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    Future Electronics IXFZ520N075T2 Tube 20
    • 1 -
    • 10 -
    • 100 $35.77
    • 1000 $35.77
    • 10000 $35.77
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    TME IXFZ520N075T2 1
    • 1 $55.8
    • 10 $50.27
    • 100 $39.86
    • 1000 $39.86
    • 10000 $39.86
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    Littelfuse Inc IXFZ520N075T2

    Discmsft Nchtrenchgate-Gen2 De475/Tube |Littelfuse IXFZ520N075T2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFZ520N075T2 Bulk 300
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    IXYS Integrated Circuits Division IXFZ520N075T2

    MOSFET DIS.465A 75V N-CH DE475 TRENCHT2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFZ520N075T2
    • 1 $54.36167
    • 10 $54.36167
    • 100 $50.8053
    • 1000 $50.8053
    • 10000 $50.8053
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    IXFZ520N075T2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFZ520N075T2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 465A DE-475 Original PDF

    IXFZ520N075T2 Datasheets Context Search

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    IXFZ520N075T2

    Abstract: No abstract text available
    Text: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings


    Original     		PDF IXFZ520N075T2 DE475 IXFZ520N075T2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ520N075T2 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode D D D G Symbol Test Conditions


    Original     		PDF IXFZ520N075T2 DE475

    MMIX1F520N075T2

    Abstract: IXFZ520N075T2 ixfz520n075
    Text: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F520N075T2 IXFZ520N075T2 MMIX1F520N075T2 IXFZ520N075T2 ixfz520n075

    140tr

    Abstract: No abstract text available
    Text: Preliminary Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F520N075T2 IXFZ520N075T2 140tr

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET MMIX1F520N075T2 VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F520N075T2 IXFZ520N075T2

    IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages

    Abstract: IXFZ520N075T2 IXTZ550N055T2
    Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages. Milpitas, CA. and Biel, Switzerland. October 5, 2010 – IXYS Corporation NASDAQ:IXYS announces


    Original     		PDF IXTZ550N055T2 IXFZ520N075T2 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages