50n60
Abstract: No abstract text available
Text: High-Gain IGBTs IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 VCES = 600V IC110 = 50A VCE sat ≤ 1.8V Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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PDF
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IXGA50N60B4
IXGP50N60B4
IXGH50N60B4
IC110
O-263
IC110
O-220AB
O-247
50N60B4
50n60
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High-Gain IGBTs IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 VCES = 600V IC110 = 36A VCE sat ≤ 1.80V Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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Original
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PDF
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IXGA50N60B4
IXGP50N60B4
IXGH50N60B4
IC110
O-263
IC110
O-220AB
O-247
50N60B4
|
Untitled
Abstract: No abstract text available
Text: High-Gain IGBTs VCES = 600V IC110 = 50A VCE sat ≤ 1.8V IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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Original
|
PDF
|
IC110
IXGA50N60B4
IXGP50N60B4
IXGH50N60B4
O-263
O-220AB
50N60B4
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