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    IXGM10N50 Search Results

    IXGM10N50 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGM10N50A IXYS Power MOSIGBTs Scan PDF

    IXGM10N50 Datasheets Context Search

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    10N50A

    Abstract: 10n50 ir 10n60 IXGP10N50
    Text: 4686226 I X Y S CORP □3 D eT| 4b ñ b 2 5 b OODOEaS □ ¥ ~ T - 3 ^ - \ 3 IXGP10N50, 60 IXGM10N50, 60 i 1 0 AMPS, 5 0 0 - 6 0 0 VOLTS MAXIMUM RATINGS Parameter Sym. IXGP10N50 IXGM10N50 IXGP10N60 IXGM10N60 Unit Drain-Source Voltage 1 V o ss 500 600 Vdc


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    PDF IXGP10N50, IXGM10N50, IXGP10N50 IXGM10N50 IXGP10N60 IXGM10N60 10N50A 10n50 ir 10n60

    IXGH30N50A

    Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
    Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono­ lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses


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    PDF 4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60