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    Abstract: No abstract text available
    Text: NEC NEC Bectronics , 31 .o ^ s - b it MASK-PROGRAMMABLE NMOS ROM Block Diagram Description The JX.PD231000/M-PD231000-1 are 1,048,576-bit Read­ only Memories utilizing NMOS silicon gate technology. The devices are edge-enabled, organized as 131,072 words by


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    PD231000/M-PD231000-1 576-bit 300ns 350ns) 27128s. 27128s 27128s, IXPD231000C 231000DS-10-84-CAT-L PDF