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    0DQ154Q

    Abstract: No abstract text available
    Text: MbflbSEb 0DQ154Q 05b B I X Y □IXYS K3BT with Diode IXSN50N120AU1 C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V 2 O Preliminary data (09/93) J W ) Symbol Test Conditions v CE8 Tj = 25‘ C to 150'C 1200 V V«* Tj = 25'C to 150'C; R ^ = 1 M il


    OCR Scan     		0DQ154Q IXSN50N120AU1 OT-227 PDF

    0504N

    Abstract: No abstract text available
    Text: MbâbEEb DDÜ154G GSb H I X V DIXYS K3BT with Diode IXSN50N120AU1 ^C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V f 3 2 Preliminary data (09/93) 4 i 1 Symbol Test Conditions VCE* Tj = 25‘C to 150'C 1200 V v « * Tj = 25'C to 150’ C; Ra = 1 M i l


    OCR Scan     		DGD154G IXSN50N120AU1 OT-227 125-C -125-C. 0504N PDF