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    Untitled

    Abstract: No abstract text available
    Text: MbôhEEb 0001.533 T lb « I X Y n IXSN51N60AU1 IGBT with Diode IC25 V CES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V Preliminary data (09/93) Maximum Ratings Symbol Test Conditions vt c e s v COR Tj = 25'C to 150‘ C 600 V Tj = 25’C to 150‘ C; RGE = 1 M ii


    OCR Scan     		IXSN51N60AU1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MbflhSEb 0 0 0 1 5 3 3 'ìlb * I X Y IXSN51N60AU1 IGBT with Diode IC25 VCES High Short Circuit SOA Capability CE sat = 53 A = 600 V = 2.5 V Preliminary data (09/93) Maximum Ratings Symbol Test Conditions v" c e s Tj = 25'C to 150‘C 600 V v COR Tj = 25’ C to 150‘C; RGE= 1 Mi2


    OCR Scan     		IXSN51N60AU1 OT-227 VOE-15V. PDF