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    IXTA76N25T Search Results

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    IXTA76N25T Price and Stock

    Littelfuse Inc IXTA76N25T

    MOSFET N-CH 250V 76A TO263
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    DigiKey IXTA76N25T Tube 300
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    Newark IXTA76N25T Bulk 300
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    • 100 $4.14
    • 1000 $3.33
    • 10000 $3.09
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    Littelfuse Inc IXTA76N25T-TRL

    MOSFET N-CH 250V 76A TO263
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    DigiKey IXTA76N25T-TRL Reel 800
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    Newark IXTA76N25T-TRL Reel 800
    • 1 $3.84
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    • 100 $3.84
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    IXYS Corporation IXTA76N25T

    MOSFETs 76 Amps 250V 39 Rds
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    Mouser Electronics IXTA76N25T
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    Future Electronics IXTA76N25T Tube 27 Weeks 300
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    TTI IXTA76N25T Tube 300
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    TME IXTA76N25T 1
    • 1 $5.03
    • 10 $4
    • 100 $3.59
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    IXYS Corporation IXTA76N25T-TRL

    MOSFETs IXTA76N25T TRL
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    Mouser Electronics IXTA76N25T-TRL
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    TTI IXTA76N25T-TRL Reel 800
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    IXYS Integrated Circuits Division IXTA76N25T

    MOSFET DIS.76A 250V N-CH TO263(D2PAK) TRENCH SMT
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    Ozdisan Elektronik IXTA76N25T 43
    • 1 $5.52893
    • 10 $5.52893
    • 100 $5.0263
    • 1000 $5.0263
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    IXTA76N25T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA76N25T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 76A TO-263 Original PDF

    IXTA76N25T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTI76N25T

    Abstract: IXTP76N25T IXTQ76N25T 2ZAO0732373 76N25T DIODE 76A t244
    Text: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T G Typical avalanche BV = 300V TO-247 IXTH S (TAB) G TO-262 (IXTI) G D S (TAB) D TO-220 (IXTP) Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T O-247 O-262 O-263 O-220 76N25T IXTP76N25T IXTQ76N25T 2ZAO0732373 DIODE 76A t244

    76N2

    Abstract: to-247 to-220 to-3p 76N25T IXTP76N25T IXTQ76N25T
    Text: TrenchTM Power MOSFET N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF O-263 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T O-220AB O-247 76N25T 9-10-A 76N2 to-247 to-220 to-3p IXTP76N25T IXTQ76N25T

    Untitled

    Abstract: No abstract text available
    Text: TrenchTM Power MOSFET IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T O-263 O-220AB IXTA76N25T IXTP76N25T

    76N25T

    Abstract: IXTQ76N25T IXTP76N25T 76N25 IXTA76n25t IXTQ76N25 IXTH76N25T IXTQ T76n ixtq76
    Text: TrenchTM Power MOSFET N-Channel Enhancement Mode TO-263 AA IXTA VDSS ID25 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T RDS(on) ≤ TO-3P (IXTQ) G G D (Tab) DS G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF O-263 IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T O-220AB O-247 IXTA76N25T IXTP76N25T 76N25T IXTQ76N25T 76N25 IXTQ76N25 IXTH76N25T IXTQ T76n ixtq76

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250