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    IXTH110N25T Search Results

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    IXTH110N25T Price and Stock

    Littelfuse Inc IXTH110N25T

    MOSFET N-CH 250V 110A TO247
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    DigiKey IXTH110N25T Tube 71 1
    • 1 $9.81
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    Newark IXTH110N25T Bulk 1
    • 1 $9.61
    • 10 $9.61
    • 100 $7.67
    • 1000 $6.06
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    IXYS Corporation IXTH110N25T

    MOSFETs 110 Amps 250V
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    Mouser Electronics IXTH110N25T 96
    • 1 $9.81
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    Future Electronics IXTH110N25T Tube 27 Weeks 300
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    IXTH110N25T Tube 27 Weeks 30
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    Bristol Electronics IXTH110N25T 530
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    Quest Components IXTH110N25T 400
    • 1 $13.032
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    TTI IXTH110N25T Tube 300
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    TME IXTH110N25T 1 1
    • 1 $9.58
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    New Advantage Corporation IXTH110N25T 106 1
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    IXYS Integrated Circuits Division IXTH110N25T

    MOSFET DIS.110A 250V N-CH TO-247AD TRENCH
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    Ozdisan Elektronik IXTH110N25T 106
    • 1 $9.38487
    • 10 $9.38487
    • 100 $8.5317
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    IXTH110N25T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTH110N25T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 110A TO-247 Original PDF

    IXTH110N25T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTV110N25TS

    Abstract: ixth110n25t ixtv110n25 IXTH110 PLUS220SMD 694W
    Text: IXTH110N25T IXTV110N25TS Trench Gate Power MOSFET VDSS ID25 RDS on = 250V = 110A Ω ≤ 24mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH110N25T IXTV110N25TS O-247 110N25T 8-11-08-A IXTV110N25TS ixth110n25t ixtv110n25 IXTH110 PLUS220SMD 694W

    Untitled

    Abstract: No abstract text available
    Text: TrenchTM Power MOSFETs VDSS ID25 IXTH110N25T IXTV110N25TS = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH110N25T IXTV110N25TS O-247 110N25T 5-14-12-B

    IXTH110N25T

    Abstract: PLUS220SMD
    Text: IXTH110N25T IXTV110N25TS TrenchTM Power MOSFETs VDSS ID25 = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH110N25T IXTV110N25TS O-247 PLUS220SMD 110N25T 5-14-12-B

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IXTH110

    Abstract: 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions
    Text: Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolerance: ± 50 μm 3. Top Bonding Pad Metal: 30 KÅ nominally thick Al 4. Back Metal: 3 layers of Ti, Ni & Au;


    Original     		PDF IXTD110N25T-8W 22-A114-B AS0011. 110N25T 1-08-A IXTH110 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions