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IXTT12N140 Abstract: IXTH12N140 Text: Advance Technical Information IXTT12N140 IXTH12N140 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1400V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTT12N140 IXTH12N140 O-268 O-247 12N140 IXTH12N140	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

IXTT12N140

Abstract: IXTH12N140
Text: Advance Technical Information IXTT12N140 IXTH12N140 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1400V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Original

IXTT12N140 IXTH12N140 O-268 O-247 12N140 IXTH12N140

PDF