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    IXYS Corporation IXTH12N150

    MOSFETs >1200V High Voltage Power MOSFET
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    Mouser Electronics IXTH12N150
    • 1 $17.67
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    Future Electronics IXTH12N150 Tube 24 Weeks 30
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    TTI IXTH12N150 Tube 300
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    TME IXTH12N150 1
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    Vyrian IXTH12N150 90
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    Littelfuse Inc IXTH12N150

    Trans MOSFET N-CH 1.5KV 12A 3-Pin(3+Tab) TO-247AD
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    Verical IXTH12N150 780 30
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    Arrow Electronics IXTH12N150 780 61 Weeks 30
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    Newark IXTH12N150 Bulk 300
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    IXTH12N150 Datasheets (1)

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    IXTH12N150 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 12A T0-247 Original PDF

    IXTH12N150 Datasheets Context Search

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    12N150

    Abstract: IXTH12N150 IXTT12N150
    Text: IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT12N150 IXTH12N150 O-268 O-247 12N150 12N150 IXTH12N150 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs VDSS ID25 IXTT12N150 IXTH12N150 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT12N150 IXTH12N150 O-268 12N150 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTT12N150 IXTH12N150 O-268 O-247 12N150 PDF

    IXTT12N150

    Abstract: No abstract text available
    Text: IXTT12N150 IXTH12N150 High Voltage Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1500V = 12A Ω ≤ 2Ω TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTT12N150 IXTH12N150 O-268 O-247 12N150 PDF