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    IXTH60N20L2 LINEAR POWER MOSFET Search Results

    IXTH60N20L2 LINEAR POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IXTH60N20L2 LINEAR POWER MOSFET Datasheets Context Search

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    IXTH60N20L2 Linear Power MOSFET

    Abstract: ixth60n20 60n20 IXTT60N20L2 IXTH60N20L2
    Text: Advance Technical Information IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 200V = 60A ≤ 45mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab Symbol Test Conditions Maximum Ratings


    Original     		IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 O-268 O-247 IXTT60N20L2 100ms IXTH60N20L2 Linear Power MOSFET ixth60n20 60n20 IXTH60N20L2 PDF

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    Abstract: No abstract text available
    Text: Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 = 200V = 60A ≤ 45mΩ Ω RDS on TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings


    Original     		IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 O-268 IXTT60N20L2 100ms 60N20L2 PDF