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IXYS Corporation IXTM5N100 MOSFET N-CH 1000V 5A TO204AA
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DigiKey	IXTM5N100	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTM5N100A MOSFET N-CH 1000V 5A TO204AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTM5N100A	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

IXTM5N100 Datasheets (11)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTM5N100		IXYS	500V IGBT with diode		Original	PDF
IXTM5N100		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM5N100		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM5N100		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
IXTM5N100		Unknown	FET Data Book		Scan	PDF
IXTM5N100		Sharp	1000 V, 5 A, sourse-drain diode		Scan	PDF
IXTM5N100A		IXYS	500V IGBT with diode		Original	PDF
IXTM5N100A		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM5N100A		IXYS	High Voltage Power MOSFETs		Scan	PDF
IXTM5N100A		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
IXTM5N100A		Unknown	FET Data Book		Scan	PDF

IXTM5N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007	PDF
5N95A Abstract: N-channel MOSFET to-247 50a P-CHANNEL 25A TO-247 POWER MOSFET ixth5n95 Text: I X Y S □ I X Y CORP 1 ÖE D • 4t.0bE2b D00Gb03 b ■ IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0-1000 V, 2.0Q /2.4Q S MAXIMUM RATINGS Parameter Sym. IXTH5N95 IXTMSN9S IXTH5N100 IXTM5N100 Drain-Source Voltage 1	OCR Scan	D00Gb03 IXTH5N95, IXTH5N100, IXTM5N95, IXTM5N100 IXTH5N95 IXTH5N100 O-204 O-220 5N95A N-channel MOSFET to-247 50a P-CHANNEL 25A TO-247 POWER MOSFET	PDF
C289 Abstract: IXTM5N100A Text: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il	OCR Scan	N100A O-247 O-204 O-247 C2-88 IXTH5N100 1XTM5N100 C2-89 C289 IXTM5N100A	PDF
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20	PDF
5n100 Abstract: 5N100A Text: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM	OCR Scan	N100A O-247 O-204 O-204 O-247 4bflb52b 5n100 5N100A	PDF
IXTH5N100A Abstract: gs 1117 ax Text: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000	OCR Scan	5N100 5N100A to150 O-247 O-204 O-204 O-247 IXTH5N100 IXTM5N100 IXTH5N100A gs 1117 ax	PDF
5N95A Abstract: 5N95 5N100 IXTH5N100 IXTH5N95 IXTM5N100 IXTM5N95 Text: I X Y S □ I X Y CORP 1ÖE D • 4t.0bE2b D00Gb03 IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , S b ■ IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0 -1 0 0 0 V, 2.0 Q /2.4Q MAXIM UM RATINGS Parameter Sym. Drain-Source Voltage 1 V dss V dgr IXTH5N95 IXTMSN9S	OCR Scan	D00Gb03 IXTH5N95, IXTH5N100, IXTM5N95, IXTM5N100 IXTH5N95 IXTH5N100 O-247 00A/fjs 5N95A 5N95 5N100 IXTM5N95	PDF
IRF250 Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan	00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95	PDF
IXTH13P20 Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460 Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com	OCR Scan		PDF
IXTM6N90A Abstract: No abstract text available Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T \| 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000	OCR Scan	IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A	PDF
1800 IXYS Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204 Text: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (typ) (typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %	OCR Scan	M4N50 T0-204 1XTM4N50A O-204 1XTM4N70 IXTM4N70A IXTM10N90A 1800 IXYS IXTM4N80 IXTM4N90 IXTM5N100 to-204	PDF