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    IXTN210P10T Search Results

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    IXTN210P10T Price and Stock

    Littelfuse Inc IXTN210P10T

    MOSFET P-CH 100V 210A SOT227B
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    DigiKey IXTN210P10T Tube 1
    • 1 $44.31
    • 10 $34.748
    • 100 $34.748
    • 1000 $34.748
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    IXYS Corporation IXTN210P10T

    MOSFET Modules TrenchP Channel Power MOSFETs
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    Mouser Electronics IXTN210P10T
    • 1 $44.31
    • 10 $34.74
    • 100 $34.74
    • 1000 $34.74
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    Newark IXTN210P10T Bulk 1
    • 1 $52.27
    • 10 $46.57
    • 100 $40.88
    • 1000 $40.88
    • 10000 $40.88
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    Future Electronics IXTN210P10T Tube 24 Weeks 10
    • 1 -
    • 10 $40.72
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    TTI IXTN210P10T Tube 300
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    TME IXTN210P10T 1
    • 1 $55.02
    • 10 $43.69
    • 100 $43.69
    • 1000 $43.69
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    IXYS Integrated Circuits Division IXTN210P10T

    MOSFET MOD.210A 100V P-CH SOT227B TRENCHP CHASSIS
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    Ozdisan Elektronik IXTN210P10T
    • 1 $65.88889
    • 10 $61.5784
    • 100 $61.5784
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    IXTN210P10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTN210P10T IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 210A SOT-227 Original PDF

    IXTN210P10T Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTN210P10T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTN210P10T -100V 200ns E153432 -100A 210P10T

    sot 227b

    Abstract: ixtn210p
    Text: Advance Technical Information IXTN210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTN210P10T -100V 200ns E153432 -100A 210P10T sot 227b ixtn210p

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTN210P10T TrenchPTM Power MOSFET VDSS ID25 RDS on D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier trr = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns G S miniBLOC E153432 S S G Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTN210P10T -100V 200ns E153432 -100A 210P10T