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    IXTN30N100L Search Results

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    IXTN30N100L Price and Stock

    Littelfuse Inc IXTN30N100L

    MOSFET N-CH 1000V 30A SOT227B
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    DigiKey IXTN30N100L Tube 598 1
    • 1 $64.82
    • 10 $54.754
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    Verical IXTN30N100L 109 1
    • 1 $64.54
    • 10 $54.45
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    Arrow Electronics IXTN30N100L 109 57 Weeks 1
    • 1 $64.54
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    Newark IXTN30N100L Bulk 300
    • 1 -
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    • 100 $57.39
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    IXYS Corporation IXTN30N100L

    MOSFET Modules 30 Amps 1000V
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    Mouser Electronics IXTN30N100L 796
    • 1 $64.82
    • 10 $54.75
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    Future Electronics IXTN30N100L Tube 52 Weeks 300
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    TTI IXTN30N100L Tube 300
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    TME IXTN30N100L 1
    • 1 $97.42
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    IXYS Integrated Circuits Division IXTN30N100L

    MOSFET MOD.30A 1000V N-CH SOT227B LINEAR CHASSIS
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    Ozdisan Elektronik IXTN30N100L
    • 1 $103.82659
    • 10 $97.0342
    • 100 $97.0342
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    IXTN30N100L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTN30N100L IXYS Power MOSFETs with Extended FBSOA Original PDF

    IXTN30N100L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTN30N100L

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTN30N100L E153432 30N100L 5-07-A IXTN30N100L

    30n100

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTN30N100L E153432 30N100L 11-27-12-B 30n100

    Untitled

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN30N100L = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTN30N100L E153432 30N100L 5-07-A

    30n100

    Abstract: IXTN30N100L 30n10
    Text: Linear Power MOSFET IXTN30N100L With Extended FBSOA VDSS ID25 D = 1000 = 30 ≤ 0.45 RDS on N-Channel Enhancement Mode V A Ω G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


    Original     		PDF IXTN30N100L OT-227 E153432 30N100L 5-07-A 30n100 IXTN30N100L 30n10

    IXAN0068

    Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
    Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability


    Original     		PDF IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L