IXTU 1000V Search Results

IXTU 1000V Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BCR8FM-20LA#BG0		Renesas Electronics Corporation	1000V - 8A - Triac Medium Power Use
BCR8FM-20LA#BH0		Renesas Electronics Corporation	1000V - 8A - Triac Medium Power Use
R7S721000VCBG#AC0		Renesas Electronics Corporation	RTOS MPU with 10MB of On-chip RAM
R7S721000VCFP#AA0		Renesas Electronics Corporation	RTOS MPU with 10MB of On-chip RAM
R7S721000VLFP#AA0		Renesas Electronics Corporation	RTOS MPU with 10MB of On-chip RAM

IXTU 1000V Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXTP01N100D Abstract: 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V Text: IXTY01N100D IXTU01N100D IXTP01N100D High Voltage Power MOSFET VDSX = ≤ RDS on N-Channel, Depletion Mode 1000V 80Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)	Original	IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 O-220) TY01N100D 100ms IXTP01N100D 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V	PDF
Untitled Abstract: No abstract text available Text: High Voltage Power MOSFET VDSX IXTY01N100D IXTU01N100D IXTP01N100D = ≤ RDS on 1000V 80Ω Ω N-Channel, Depletion Mode TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)	Original	IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 100ms 01N100D	PDF
IXTY05N100 Abstract: IXTU05N10 IXTU 1000V IXTU05N Text: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	IXTU05N100 IXTY05N100 750mA O-251 05N100M IXTY05N100 IXTU05N10 IXTU 1000V IXTU05N	PDF
Untitled Abstract: No abstract text available Text: VDSS ID25 IXTU05N100 IXTY05N100 High Voltage Power MOSFET = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTU05N100 IXTY05N100 750mA O-251 05N100M	PDF
Untitled Abstract: No abstract text available Text: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = =  RDS on 1000V 750mA  17 N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M	Original	IXTU05N100 IXTY05N100 750mA O-251 100ms 05N100 3-14-A	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
K117 Abstract: mica capacitors Text: High-Frequency Mica Capacitors Type CDV16 Mica Capacitors for Snubbers and RF '."'k'i Ideal for snubber and RF applications, CDV16 mica capacitors now handle dV/dts up to 275,000 V//is and they assure controlled, resonance-free performance through 1 GHz. Higher dV/dt Capability an d Flatter Insertion Loss	OCR Scan	CDV16 CDV16 CDV19 CDV16s CDV16FF102J03 InformationCDV16 K117 mica capacitors	PDF