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    IXTU01N100 Price and Stock

    IXYS Corporation IXTU01N100

    MOSFET N-CH 1000V 100MA TO251
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    DigiKey IXTU01N100 Tube 70
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    • 1000 $2.33686
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    Future Electronics IXTU01N100 Tube 24 Weeks 70
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    • 100 $1.61
    • 1000 $1.61
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    TME IXTU01N100 1
    • 1 $2.41
    • 10 $2.15
    • 100 $1.72
    • 1000 $1.72
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    New Advantage Corporation IXTU01N100 222 1
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    • 100 $6.05
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    IXYS Corporation IXTU01N100D

    MOSFET N-CH 1000V 400MA TO251
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    DigiKey IXTU01N100D Tube
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    Littelfuse Inc IXTU01N100

    Discmosfet N-Ch Std-Hivoltage To-251D/Tube |Littelfuse IXTU01N100
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    Newark IXTU01N100 Bulk 350
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    IXYS Integrated Circuits Division IXTU01N100

    MOSFET DIS.100mA 1000V N-CH TO251(I-PAK) H.VOLTAGE
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    Ozdisan Elektronik IXTU01N100 322
    • 1 $4.6266
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    • 100 $4.206
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    IXTU01N100 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTU01N100 IXYS 1000V high voltage MOSFET Original PDF
    IXTU01N100 IXYS High Voltage MOSFET Original PDF
    IXTU01N100 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1KV .1A I-PAK Original PDF
    IXTU01N100D IXYS High Voltage MOSFET N-Channel, Depletion Mode Original PDF

    IXTU01N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTP01N100D

    Abstract: 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V
    Text: IXTY01N100D IXTU01N100D IXTP01N100D High Voltage Power MOSFET VDSX = ≤ RDS on N-Channel, Depletion Mode 1000V 80Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)


    Original     		PDF IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 O-220) TY01N100D 100ms IXTP01N100D 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSX IXTY01N100D IXTU01N100D IXTP01N100D = ≤ RDS on 1000V 80Ω Ω N-Channel, Depletion Mode TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)


    Original     		PDF IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 100ms 01N100D

    Untitled

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sig500 IX6R11S3 IX6R11S6 Edisonstrasse15 D-68623;

    Untitled

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sigFH14N100Q IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6

    IX6R11S3

    Abstract: IX6R11P7
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7

    U4008

    Abstract: IX6R11P7 IX6R11S3 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S6
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 U4008 IX6R11P7 IXFK21N100F 18PIN 18-PIN

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 IX6R11P7

    IXTH20N50D

    Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
    Text: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.


    Original     		PDF IXI858/IXI859 00V/1000V O-247 O-268 O-251AA IXTH20N50D IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    VCH20

    Abstract: IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S3 IX6R11S6 ixys mosfet
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXFH14N100Q IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 VCH20 IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN ixys mosfet

    IXCP10M90S

    Abstract: IX6R11S6 18-PIN 10m90s
    Text: IX6Q11 1 MHz, 300 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 300V* • ± 50V/ns dV/dt immunity


    Original     		PDF IX6Q11 IX6Q11 IXTU01N100 IX6Q11S3 IX6Q11S6 IXCP10M90S IX6R11S6 18-PIN 10m90s

    IX6R11S6

    Abstract: ix6r11s3
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 Edisonstrasse15

    Untitled

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sXFH14N100Q IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7

    IRFP260 equivalent

    Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
    Text: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200


    Original     		PDF IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X IFRC254-5X IFRC264-6X IXTD40N30-7X IRFC450-5X IRFP260 equivalent IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD05N100-1T x315 IRFP254 equivalent

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		PDF O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20

    1XTH5N100

    Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
    Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10


    OCR Scan     		PDF IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan     		PDF O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel