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    IXTV102N20T Datasheets (1)

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    IXTV102N20T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 102A PLUS220 Original PDF

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    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH102N20T IXTQ102N20T IXTV102N20T VDSS ID25 = 200 V = 102 A Ω ≤ 23 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 VGSM


    Original     		IXTH102N20T IXTQ102N20T IXTV102N20T O-247 102N20T 3-07-A PDF

    IXTH102N20T

    Abstract: IXTV102N20T 102A IXTQ102N20T 102N20
    Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH102N20T IXTQ102N20T IXTV102N20T = 200 V = 102 A Ω ≤ 23 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V


    Original     		IXTH102N20T IXTQ102N20T IXTV102N20T O-247 102N20T 3-07-A IXTH102N20T IXTV102N20T 102A IXTQ102N20T 102N20 PDF