IXAN0062
Abstract: 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet
Text: IXAN0062 IXYS Power MOSFET Products Abdus Sattar, IXYS Corporation This paper presents IXYS Corporation’s power MOSFET products and their typical application information. Power MOSFETs are widely used in power switching applications due to their features of easy control, fast
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IXAN0062
IXAN0062
1000V P-channel MOSFET
DMOSFET
"Power MOSFETs"
power mosfets
mosfet 1000v
Silicon MOSFET 1000V
mosfets
P-Channel Depletion Mosfets
depletion mode power mosfet
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IXTP220N04T2
Abstract: IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2
Text: IXYS POWER Efficiency through Technology N E W P R O D U C T B RI E F 40V – 75V TrenchT2TM MOSFETs Next Generation Trench Power MOSFETs MAY 2008 OVERVIEW IXYS’ next generation TrenchT2TM Power MOSFETs are designed and optimized to meet the thermal and electrical performance of today’s energy and power management
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O-220
IXTP220N04T2
IRF2204
IXTA200N055T2
IXYS Class D Switching Amplifiers
IXTA100N04T2
IXTA120N04T2
IXTA220N04T2
IXTA90N055T2
IXTP100N04T2
IXTP120N04T2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA160N04T2 IXTP160N04T2 VDSS ID25 = 40V = 160A Ω ≤ 5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR
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IXTA160N04T2
IXTP160N04T2
O-263
160N04T2
10-31-08-B
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IXTA300N04T2-7
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2-7 VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA300N04T2-7
O-263
062in.
300N04T2
1-10-08-A
IXTA300N04T2-7
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220N04T2
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V
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IXTA220N04T2-7
O-263
220N04T2
3-06-08-A
4-24-08-C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTA300N04T2-7 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA300N04T2-7
O-263
300N04T2
1-10-08-A
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IXTP220N04T2
Abstract: IXTP 220N04T2 220N04T2 IXTA220N04T2 MOSFET IXYS TO-220 *9918c ixta220n04 220N04 DS99918C
Text: IXTA220N04T2 IXTP220N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient
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IXTA220N04T2
IXTP220N04T2
O-263
O-220
062in.
220N04T2
12-15-08-D
IXTP220N04T2
IXTP 220N04T2
IXTA220N04T2
MOSFET IXYS TO-220
*9918c
ixta220n04
220N04
DS99918C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2 IXTP300N04T2 VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40
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IXTA300N04T2
IXTP300N04T2
O-263
300N04T2
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IXTA160N04T2
Abstract: 160N04 IXTP160N04T2
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA160N04T2 IXTP160N04T2 VDSS ID25 = 40V = 160A Ω ≤ 5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR
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IXTA160N04T2
IXTP160N04T2
O-263
160N04T2
10-31-08-B
IXTA160N04T2
160N04
IXTP160N04T2
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IXTP120N04T2
Abstract: max2847 120a16
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA120N04T2 IXTP120N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA120N04T2
IXTP120N04T2
O-263
O-220
062in.
120N04T2
IXTP120N04T2
max2847
120a16
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220N04T2
Abstract: No abstract text available
Text: TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V
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IXTA220N04T2-7
O-263
062in.
220N04T2
4-24-08-C
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IXTP300N04T2
Abstract: nf 931 diode to220 IXTA300N04T2 1416T T300N IXYS Class D Switching Amplifiers
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA300N04T2 IXTP300N04T2 VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40
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IXTA300N04T2
IXTP300N04T2
O-263
O-220
300N04T2
IXTP300N04T2
nf 931 diode to220
IXTA300N04T2
1416T
T300N
IXYS Class D Switching Amplifiers
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information TrenchT2TM Power MOSFET IXTV270N055T2 IXTV270N055T2S VDSS ID25 = 55V = 270A Ω ≤ 3.0mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS220 (IXTV) G Symbol Test Conditions VDSS TJ = 25°C to 175°C
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IXTV270N055T2
IXTV270N055T2S
PLUS220
270N055T2
3-10-A
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IXTV270N055T2
Abstract: IXTV270N055T2S PLUS220SMD 270N0 51310a
Text: Advance Technical Information IXTV270N055T2 IXTV270N055T2S TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 RDS on PLUS220 (IXTV) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTV270N055T2
IXTV270N055T2S
PLUS220
270N055T2
3-10-A
IXTV270N055T2
IXTV270N055T2S
PLUS220SMD
270N0
51310a
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Untitled
Abstract: No abstract text available
Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA120N04T2 IXTP120N04T2 = 40V = 120A Ω ≤ 6.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA120N04T2
IXTP120N04T2
O-263
O-220
120N04T2
2-15-08-A
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IXTH300N04T2
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET VDSS ID25 IXTH300N04T2 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTH300N04T2
O-247
300N04T2
12-15-08-B
IXTH300N04T2
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IXTP220N04T2
Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40
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IXTA220N04T2
IXTP220N04T2
O-263
O-220
220N04T2
04-24-08-C
IXTP220N04T2
IXTP 220N04T2
IXTA220N04T2
220N04
ixtp220
220A-75
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DS99918C
Abstract: IXTP 220N04T2 220N04T2 IXTP220N04T2
Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2 IXTP220N04T2 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient
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IXTA220N04T2
IXTP220N04T2
O-263
O-220
220N04T2
12-15-08-D
DS99918C
IXTP 220N04T2
IXTP220N04T2
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220N04
Abstract: No abstract text available
Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2-7 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V
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IXTA220N04T2-7
O-263
062conds
220N04T2
4-24-08-C
220N04
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns FMP26-02P VDSS 43 ID25 T1 5 34 T2 (Electrically Isolated Tab) 11 22 Symbol Test Conditions
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240ns
150ns
FMP26-02P
50/60HZ,
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 (Electrically Isolated Tab) T2 11 22 Symbol Test Conditions
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FMP26-02P
240ns
150ns
50/60HZ,
00A/s
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IXTH300N04T2
Abstract: No abstract text available
Text: Preliminary Technical Information IXTH300N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 300A Ω ≤ 2.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTH300N04T2
O-247
300N04T2
12-15-08-B
IXTH300N04T2
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IXTP220N04T2
Abstract: No abstract text available
Text: IXTA220N04T2 IXTP220N04T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 40V = 220A Ω ≤ 3.5mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA220N04T2
IXTP220N04T2
O-263
O-220AB
220N04T2
5-12-10-E
IXTP220N04T2
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IXTP170N075T2
Abstract: ixtp170n075 T170N IXTA170N075T2 170N075T2
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA170N075T2 IXTP170N075T2 VDSS ID25 = 75V = 170A Ω ≤ 5.4mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75
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IXTA170N075T2
IXTP170N075T2
O-263
O-220
170N075T2
IXTP170N075T2
ixtp170n075
T170N
IXTA170N075T2
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