E72873
Abstract: 30-10B
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
E72873
30-10B
31-10B
E72873
30-10B
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Untitled
Abstract: No abstract text available
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
E72873
30-10B
31-10B
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IXYS DSEI 2
Abstract: ixys dsei 2x30
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5
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30-06P
31-06P
IXYS DSEI 2
ixys dsei 2x30
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ixys dsei 2x30
Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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30-10P
31-10P
ixys dsei 2x30
DSEI IXYS 2x31
IXYS DSEI 2
DSEI 20-01 A
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ixys dsei 2x31-06c
Abstract: 2x31-06c ixys dsei ixys dsei 2x30 06c ultrasonic distance circuit design IXYS DSEI 2
Text: DSEI 2x30-06P IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 Type DSEI 2x 30-06P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-06P
30-06P
20070731a
ixys dsei 2x31-06c
2x31-06c
ixys dsei
ixys dsei 2x30 06c
ultrasonic distance circuit design
IXYS DSEI 2
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Dsei 2x101-12A
Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000
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O-252
0-06A
0-10A
0-12A
D1-16
D1-18
D1-20
0-02A
Dsei 2x101-12A
ixys dsei 1x31-06c
ixys dsei 2x31-06c
IXYS DSEI 2X121-02a
ixys dsei 2x30-06c
DSEI IXYS 2x31-12B
2x61-06c
2x121-02a
2x31-12B
2x31-10b
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DSEI IXYS 2x31-12B
Abstract: 2x31-12B
Text: DSEI 2x30-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 30-12P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-12P
30-12P
20070731a
DSEI IXYS 2x31-12B
2x31-12B
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ixys dsei
Abstract: IRM 1200 80D-5
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 1200 1200 IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 30-12P DSEI 2x 31-12P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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30-12P
31-12P
ixys dsei
IRM 1200
80D-5
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2x31-10b
Abstract: ixys dsei 2x31-10b
Text: DSEI 2x30-10P IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type DSEI 2x 30-10P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-10P
30-10P
2x31-10P,
2x31-10B
20070731a
2x31-10b
ixys dsei 2x31-10b
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IXYS DSEI 2
Abstract: E72873 dsei 31-06c ixys dsei
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
IXYS DSEI 2
E72873
dsei 31-06c
ixys dsei
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30u60
Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Text: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600
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-200A/
TB60S
TA60CS
TA60C
04E120
09E120
30u60
ixys dsei 8-06
ixys dsei
STTH 3060
MUR 8120
ixys dsei 12-12
10U60
RHRG 8120
40U60
ixys dsei 60-06
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SWITCH 10P
Abstract: ixys dsei 2x30
Text: DSEI 2x31-10P IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type DSEI 2x 31-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-10P
31-10P
20070731a
SWITCH 10P
ixys dsei 2x30
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2x31-06P
Abstract: DSEI IXYS
Text: DSEI 2x31-06P IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 Type DSEI 2x 31-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-06P
31-06P
20070731a
2x31-06P
DSEI IXYS
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ixys dsei 2x30-06c
Abstract: ixys dsei 2x31-06c 2x31-06c ixys dsei 2x30-04c 2x30-06c DSEI IXYS 2x31 DSEI 2X30-04C DSEI 2
Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x30 IFAVM = 2x30 A DSEI 2x31 VRRM = 400/600 V trr VRSM V 440 640 VRRM miniBLOC, SOT-227 B Type V 400 600 DSEI 2x30-04C DSEI 2x30-06C DSEI 2x31-04C DSEI 2x31-06C DSEI 2x30 DSEI 2x31 Symbol Test Conditions IFRMS IFAVM ①
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OT-227
2x30-04C
2x30-06C
2x31-04C
2x31-06C
ixys dsei 2x30-06c
ixys dsei 2x31-06c
2x31-06c
ixys dsei 2x30-04c
2x30-06c
DSEI IXYS 2x31
DSEI 2X30-04C
DSEI 2
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ixys dsei 2x30-06c
Abstract: ixys dsei 2x30-05c
Text: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060
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4bflb52b
OT-227
2X30-04C
2X30-05C
2X30-06C
2x31-050
2x31-060
D-68619
ixys dsei 2x30-06c
ixys dsei 2x30-05c
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ixys dsei 2x30-04c
Abstract: No abstract text available
Text: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine
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OCR Scan
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2X30-04C/06C
2X31-04C/06C
DSEI2x30
00D343R
D-68623
ixys dsei 2x30-04c
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ixys dsei 2x30-05c
Abstract: ixys dsei 2x30-04c ixys dsei
Text: 4bflb22b O G O ia n D Y I X E H B IIX Y S DSEI 2x30 IFAV DSEI 2x31 VRRM Fast Recovery Epitaxial Diodes 2x30 A 400-600 V < 35 ns miniBLOC, SOT-227 B v RSM V T yp e Typ e V V 440 540 640 400 500 600 Symbol Test Conditions •cavi . TVJ = Tvjm Tc = 85°CT rectangular, 6= 0.5
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4bflb22b
OT-227
2X30-04C
2x31-040
2x30-05C
2x31-050
2x30-060
2x31-060
D-68619
ixys dsei 2x30-05c
ixys dsei 2x30-04c
ixys dsei
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ixys dsei 2x31-10b
Abstract: No abstract text available
Text: QIXYS 4bflfc>22b 0 0 0 1 0 2 1 TM7 « I X Y Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t_ = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSU v rrm V T yp e Type DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B DSEI 2x31-08B DSEI 2x31-10B
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OT-227
2x30-06B
2x30-08B
2x30-10B
2x31-06B
2x31-08B
2x31-10B
D-68619
ixys dsei 2x31-10b
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2x30-10B
Abstract: 2x31-10b ixys dsei 2x31-10b ixys dsei 2x30-10b
Text: MbflL.22b 0001021 T47 « I X Y □IXY S Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t. = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSM V 640 800 1000 v rrm T y p e T y p e V 600 800 1000 DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B
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OT-227
2x30-06B
2x31-06B
2x30-08B
2x31-08B
2x30-10B
2x31-10B
D-68619
2x31-10b
ixys dsei 2x31-10b
ixys dsei 2x30-10b
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DSEI IXYS 2x31
Abstract: IXYS DSEI 2X IXYS fast recovery rectifiers
Text: Fast Recovery Epitaxial Diode FRED DSEI 2x 30 DSEI 2x31 I 1 VRRM V Type V 1000 1000 4 I p : DSEI 2x 30-1 OB DSEI 2x 31 -1 OB - I r 1 k -. — ÎI- 1 DSEI 2x30 Symbol ^FRMS U « U rm ^FSM l2t Test Conditions DSEI 2x31 Maximum Ratings (per diode) Tyj I v jw
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OCR Scan
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OT-227
E72873
DSEI IXYS 2x31
IXYS DSEI 2X
IXYS fast recovery rectifiers
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Untitled
Abstract: No abstract text available
Text: lüIXYS 1 Fast Recovery Epitaxial Diodes FRED DSEI 2x30 ^FAVM DSEI 2x31 vrRRM 2x28 A 1200 V 40 ns t v t rsm V rrm T y p e r - r V V 1200 1 2 0 0 DSEI 2x30-12B DSEI 2x31 -12B • - -4 - 5 miniBLOC, SOT-227 B n P DSEI 2x31 DSEI 2x30 Symbol Test Conditions
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OCR Scan
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2x30-12B
OT-227
G003D11
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PDF
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x30 lFAVM = 2x30 A DSEI 2x31 VRRM = 1000 V trr v RSM v RRM = 35 ns miniBLOC, SOT-227 B Type -N Ho V V 1 0 00 Symbol 10 00 DSEI 2x30-10B DSEI 2x31-1 OB Test Conditions O 0 DSEI 2x30 Maximum Ratings (per diode) Tc = 50° C; rectangular, d = 0.5
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OCR Scan
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OT-227
2x30-10B
2x31-1
-40Dimensions
1997IXYS
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DSE12X30
Abstract: ixys dsei 2x30-12b ixys ml 075 ixys dsei dse12 DTV50 IXYS rectifiers fred 255
Text: DIXYS Fast Recovery Epitaxial Diodes FRED DSEI 2x30 ^FAVM DSEI 2x31 v RRM 2x28 A 1200 V 40 ns vt rsm V 1200 miniBLOC, SOT-227 B VRRW Type r V 1200 DSEI 2x30-12B DSEI2x31-12B - I i T ? P 0 1 i—« DSEI 2x31 DSEI 2x30 Maximum Ratings (per diode) Symbol Test Conditions
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OCR Scan
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2x30-12B
DSEI2x31-12B
OT-227
DSE12X30
ixys dsei 2x30-12b
ixys ml 075
ixys dsei
dse12
DTV50
IXYS rectifiers
fred 255
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PDF
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dsei 31-06c
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5
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OCR Scan
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30-04C
31-04C
30-06C
31-06C
OT-227
E72873
dsei 31-06c
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