Untitled
Abstract: No abstract text available
Text: , Una. J. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N4151 SMALL SIGNAL DIODES FEATURES * Silicon Epitaxial Planar Diode DO-35 * Fast switching diode. max. 0.Q7912.0) * This diode is also available in other case
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1N4151
DO-35
Q7912
OD-123
1N4151W
LL4151.
DO-35
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100-01A
Abstract: 1N4151W
Text: DATA SHEET 1N4151W SOD-123 SURFACE MOUNT SWITCHING DIODES 500 mWatts .154 3.90 .141(3.60) .008(.20)MAX • Fast switching Speed • Electrically ldentical to Standerd JEDEC • High Conductance • Surface Mount Package ldeally Suited for Automatic lnsertion
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1N4151W
OD-123
2002/95/EC
OD-123
MIL-STD-750
100-01A
1N4151W
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 1N4151W SOD-123 SURFACE MOUNT SWITCHING DIODES POWER 50 Volts VOLTAGE Unit: inch mm 0.154(3.90) 0.141(3.60) 500 mWatts 0.110(2.80) 0.098(2.50) FEATURES • Fast switching Speed • Electrically ldentical to Standerd JEDEC • High Conductance
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1N4151W
2002/95/EC
IEC61249
OD-123
OD-123
MIL-STD-750
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1N4151
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES 1N4151 REVERSE VOLTAGE : 50 V CURRENT: 0.15 A DO-35 GLASS Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode
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1N4151
DO-35
1N4151
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Untitled
Abstract: No abstract text available
Text: 1N4151 Small Signal Switching Diodes REVERSE VOLTAGE : 50 V CURRENT: 0.15 A DO-35 GLASS Features Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation Mechanical Data Case: DO-35,glass case Polarity: Color band denotes cathode
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1N4151
DO-35
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL 1N4151 REVERSE VOLTAGE : 50 V CURRENT: 0.15 A SMALL SIGNAL SWITCHING DIODE FEATURES Silicon epitaxial planar diode DO-35 GLASS High speed switching diode 500 mW power dissipation MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode
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1N4151
DO-35
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1N4151
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4151W Features • • • Sillcon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the
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1N4151W
DO-35
1N4151,
DL4151
OD123
100OHMS,
100MHz,
1N4151
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1N4151WS
Abstract: No abstract text available
Text: 1N4151WS VISHAY Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type
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1N4151WS
DO-35
1N4151,
LL4151.
OD-323
1N4151WS
1N4151WS-GS18
1N4151WS-GS08
D-74025
08-Jul-04
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IN5551
Abstract: 1N4148 75v 150mA diode in483a zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode Switching diode 80V 200mA zener diode 50w zener in4148
Text: PART NUMBER INDEX MICROSEMI CORP/ WATERTOWN SDE T> WM 13M7^b3 DESCRIPTION PART NUMBER 1N645J, JTX 1N645-1J, JTX, JTXV 1N647, J, JTX 1N647-1, J, JTX, JTXV 400mA; 400mA; 400mA; 400mA; 270V 270V 480V 480V J, J, J, J, JTX JTX, JTXV JTX, JTXV JTX, JTXV 1N4883-1N4884
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1N251,
1N456
1N456A
1N457,
1N457A
1N458,
1N458A
1N459,
1N459A
IN483A
IN5551
1N4148 75v 150mA diode
zener 400v
in4148 zener diode
Zener Diode 1.5W DO35
100v 500ma diode
Switching diode 80V 200mA
zener diode 50w
zener in4148
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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1N4148 SMD LL-34
Abstract: Diode smd 82T SMD 82T LTZ-MR15 SC-40 DO-34 ZENER da226u 1N4606 1N4148 LL-41 1SR35-100
Text: : t — K /D io d e s T .'f " j f - > • ? '£ '< i [ — K /S w itc h in g Diodes • ¡ S S É /t^ 'i *j 3 - 's * ? $ Part No. Cond. Package Page V r V V f (V) Max. I f (mA) 1SS353 80 1.2 100 USM 34 1SS354 50 1.2 100 USM 34 1SS355 35 1.2 100 USM 34 RLS-71
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1SS353
1SS354
1SS355
RLS-71
RLS-72
RLS-73
1SS41
1S2471
1S2472
1S2473
1N4148 SMD LL-34
Diode smd 82T
SMD 82T
LTZ-MR15
SC-40
DO-34 ZENER
da226u
1N4606
1N4148 LL-41
1SR35-100
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1s5355
Abstract: 1N4148 SMD LL-34 1N914 CJ 4148 1N4148F ISS356 KT106 4152J ROHM 1SS292 SM 4151 ROHM RLS
Text: — K /D io d e s • « * Ä m m ¿i. • m m m & • s * 3 S * ; í j & í í - i é • îit/^ coxfoî,—ÆcoÂfflA'oZ'^ticu it= äfc> - ì ì X c Fi L Î LTl±, *HU í-3±á4± Ì X-ffllPpll'-ä-tiT? v.'„ S t t T 't í , y y T - Kc7 S„ap i ; o é ä I T I J ,
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052Typ.
1s5355
1N4148 SMD LL-34
1N914 CJ 4148
1N4148F
ISS356
KT106
4152J
ROHM 1SS292
SM 4151
ROHM RLS
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1n914 surface mount diode
Abstract: equivalent diode for 1n457 1N457 equivalent 1N459 equivalent 1N914 SOT-23 1N456A 1n4148 sot 1N4148 SOT-23 1n457a equivalent 1N914 diode SOT-23
Text: This Surface Mount Diodes Material tr In a fc-J fc-> General Purpose & Specialty Surface Mount Diodes continued The National "MMBD" Series provides the SOT-23 electrical equivalent of the standard devices listed. Each family is available in 5 configurations.
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b501130
1n914 surface mount diode
equivalent diode for 1n457
1N457 equivalent
1N459 equivalent
1N914 SOT-23
1N456A
1n4148 sot
1N4148 SOT-23
1n457a equivalent
1N914 diode SOT-23
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Untitled
Abstract: No abstract text available
Text: K /D io d es 1S2471 /1S2472/1S2473/1S2787/1SS41 1S2471/1S2472/1S2473 1S2787/1SS41 Silicon Epitaxial Planar High-Speed Switching Diodes • trr= 2ns Typ. T5& 3 o 2) 3) T f-jE H I/D im en sion s (U nit : mm) /J\$! (DO-35) T '* 3 „ -Tj-'HASit 4) • Features
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1S2471
/1S2472/1S2473/1S2787/1SS41
1S2471/1S2472/1S2473
1S2787/1SS41
DO-35)
1S2471
1S2787
1SS41
1S2473
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AMERICAN POWER DEVICES 1n914
Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
Text: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V
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DO-35
1N456
1N456A
1N457
1N457A
1N458
1N458A
1N619
1N890
1N914
AMERICAN POWER DEVICES 1n914
1N5209
1N3064
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1S2473
Abstract: 1SS278 RB721Q 1SS252 1N3606 1SR35-100A 1SS139 LTZ-MR15 RB015T-40 LTZ-MR15 LED
Text: Diodes Quick reference I Molded Application Vr V MSR ( ^ 2 .5 ) I SIP9Pin j I TO-220FD 35 High-speed Ultra High-speed Low-leakage High-voltage ^ P a g e .1 6 0 ea Glass types Package I DO-35 M 1.8) Part No. 1SS2787 CD DO-34 (<>1.8) USD ( ¿ 1 .8 ) DO-41 ! ¿2.7)
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O-220FD
DO-35
1SS2787
1S2473
1S2472
1S2471
1SS41
1SS94
1SS93
1SS92
1SS278
RB721Q
1SS252
1N3606
1SR35-100A
1SS139
LTZ-MR15
RB015T-40
LTZ-MR15 LED
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Untitled
Abstract: No abstract text available
Text: Semi conduct or Switching Diodes Computer Diodes Glass Package V RRM Device No. • Package No. C <V) R (nA) V Min Max <V> @ R (V> @ J a, Max (pF) (ns) Test Cond. Process No. Max Max 1N914 DO-35 100 25 5000 20 75 1 10 4 4 (Note 2) D3 1N914A DO-35 100 25
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1N914
1N914A
1N914B
1N916
DO-35
1N916A
1N916B
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1N4536
Abstract: 1N3604 1N4606 1N3605 RLS4152 1n4533
Text: ¥•4 1N 1N Series K /D iodes Series *-r-y * - K Switching Diodes • JEDEC JSfêpp/JEDEC Standards • W f i "yfälSl/Dimensions Unit : mm JEDEC M ftä J H T , t& u sk<T) 1N v U - X ' f e S i i L t t « ? '< r m î < 1N Series conforming to JEDEC Standards are also available so that
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DO-35
100mA
200mA
250mA
1N4531
1N4532
1N4533
1N4534
1N4536
1N3604
1N4606
1N3605
RLS4152
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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Untitled
Abstract: No abstract text available
Text: $ 4 # — K /D iodes IN S e rie s • JEDEC 1N Series 1 -K Switching Diodes JEDEC Standards • [2/Dimensions Unit : mm JED EC « fè&LLZ, £<7>1N v ' J - X f c t l i t l , T Î S ^ Î - Î '< 7 ) T '^ W < tc è^ \ 1N Series conforming to JEDEC Standards are also available so that
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76S6t
DO-35
025mA
1N4532
1N4531
1N4533
1N4S34
1N4536
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Untitled
Abstract: No abstract text available
Text: Tem ic 1N4151 TELEFUN K EN Sem iconductors Silicon Epitaxial Planar Diode Applications Extreme fast sw itches Absolute Maximum Ratings Tj = 2 5 ° C T est C o n d itio n s P a ra m e te r T ype R ep e titiv e p eak rev erse v o ltag e R ev e rse v o ltag e
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1N4151
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Untitled
Abstract: No abstract text available
Text: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage
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LL4151_
1N4151
50mmx50mmx1
01-Apr-99
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in4151
Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.
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bb53131
1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4153 diode
1N4150
1N4151
1N4153
IEC134
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GE 7252
Abstract: JANTXV1N4532 JAN1N4153-1 JANTX1N4150-1
Text: Signal/General Purpose Diodes PartNum ber SIG JANTXV1N4532 1N4153 JAN1N4153 JAN1N4153-1 JAN1N4153-1 JANTX1N4153 JANTX1N4153-1 JANTX1N4153-1 JANTX1N4153UR-1 JANTXV1N4153 JANTXV1N4153-1 JANTXV1N4153-1 JANTXV1N4153UR-1 1N4154 BAV70 BAW5S 1N3600 1N4151 MLL4150-1
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DO-34
DO-35
DO-213AA
GE 7252
JANTXV1N4532
JAN1N4153-1
JANTX1N4150-1
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