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    Microchip Technology Inc JANTX1N4574AUR-1

    Zener Diodes 6.4V 1 MA +/- .05% Round-End Temperature Compensated
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    Mouser Electronics JANTX1N4574AUR-1 77
    • 1 $33.17
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    Microchip Technology Inc JAN1N4571A-1

    Zener Diodes 6.4V 1MA +/- .5% Temperature Compensated
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    Mouser Electronics JAN1N4571A-1
    • 1 $5
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    • 100 $4.89
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    Microchip Technology Inc JANS1N4573AUR-1

    Zener Diodes 6.4V 1MA +/- .1% Round-End Temperature Compensated
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    Mouser Electronics JANS1N4573AUR-1
    • 1 $76.29
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    Microchip Technology Inc JANS1N4570AUR-1/TR

    Zener Diodes 6.4V .5MA +/-1% Round-End Temperature Compensated TR
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    Mouser Electronics JANS1N4570AUR-1/TR
    • 1 -
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    • 100 $80.37
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    Microchip Technology Inc JANS1N4575AUR-1/TR

    Zener Diodes 6.4V 2 MA +/- 1% Round-End Temperature Compensated TR
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    Mouser Electronics JANS1N4575AUR-1/TR
    • 1 -
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    • 100 $80.37
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    J 1N457 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J1N457 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-1N457 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J 1N457 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J.1N457 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J1N457A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-1N457A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J 1N457A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J.1N457A Thomson-CSF Condensed Data Book 1977 Scan PDF

    J 1N457 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IN5551

    Abstract: 1N4148 75v 150mA diode in483a zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode Switching diode 80V 200mA zener diode 50w zener in4148
    Text: PART NUMBER INDEX MICROSEMI CORP/ WATERTOWN SDE T> WM 13M7^b3 DESCRIPTION PART NUMBER 1N645J, JTX 1N645-1J, JTX, JTXV 1N647, J, JTX 1N647-1, J, JTX, JTXV 400mA; 400mA; 400mA; 400mA; 270V 270V 480V 480V J, J, J, J, JTX JTX, JTXV JTX, JTXV JTX, JTXV 1N4883-1N4884


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    PDF 1N251, 1N456 1N456A 1N457, 1N457A 1N458, 1N458A 1N459, 1N459A IN483A IN5551 1N4148 75v 150mA diode zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode Switching diode 80V 200mA zener diode 50w zener in4148

    DIODE 1N746a JX

    Abstract: JS j 1N6677-1
    Text: PRODUCT LISTING ALL PRODUCTS Page Number 1N746 thru 1N759A . Page Number 9 1N4565A-1 thru 1N4574A-1 . J, JX, JV, JS. 29 1N746A thru 1N759A . .JANHC, JANKC. 129 1N4565AUR-1 thru 1N4584AUR-1 .J, JX, JV, J S . 85 1N4614 thru 1N4627 . .


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    PDF 1N746 1N759A 1N746A-1 1N759A-1. 1N746AUR-1 1N759AUR-1. 1N821 1N829A 1N829. DIODE 1N746a JX JS j 1N6677-1

    4A2 zener diode

    Abstract: 1N4569 JAN 1N4570A JANTX 1n4573 20771 1N4565A 1N4565A-1 1N4565AUR-1 Zener do35 marking code 9 a2 1N4566A
    Text: MIL S P E C S 44 E ]> • 0000125 0033734 7 ■MILS The documentation and process | conversion measures necessary to | comply with this amendment shall be | completed by 2 November 1993 j - 1 |[NCH-POUND] 1- J


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    PDF MIL-S-19500/452C MIL-S-19500/452B 1N4565A 1N4584A, 1N4565A-1 1N4584A-1, 1N4565AUR-1 1N4584AUR-1, CA4565A) 4A2 zener diode 1N4569 JAN 1N4570A JANTX 1n4573 20771 Zener do35 marking code 9 a2 1N4566A

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    JAN1N4570A-1

    Abstract: No abstract text available
    Text: Zero-TC Reference Diodes Micmsemi i Part Number M icrosem i Division Package Outline •Type Scottsd ale D O -35 JANTX1N4579AUR-1 S cottsd ale JANTXV1N4575A S cottsd ale D O -2 1 3 A A DO -7 J ANTXV1N4575A-1 S cottsd ale DO-35 D O -2 1 3 A A J ANTXV1N4575AU R-1 S cottsd ale


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    PDF DO-35 OTC-11 JAN1N4570A-1

    1N4580

    Abstract: 1N3779 1N3780 1N3781 1N3782 1N3783 1N3784 1N4565 1N4565A 1N4566
    Text: 3 5 4 1563 FENWAL E L E C T R O N ICS /A PD 03 83D - 0_ 0_9 1 9 D e J 3S41St3 O D O G ^ n D T 3 TCZENER DIODES -T -il-}/ j Type .0 2 0 * 0 0 2 - 1 DO-7 Case 400 mW & 500 mW, TC DO-7 Case 0 9 6 ± O il i I Test Current Maximum^ Dynamic Impedance Temperature


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    PDF 1N3779 1N3780 1N3781 1N3782 1N3783 1N3784 Tem4575 1N4575A 1N4576 1N4576A 1N4580 1N4565 1N4565A 1N4566

    D4372A

    Abstract: 1N6677-1
    Text: PRODUCT LISTING ALL PRODUCTS Page Number 1N746 thru 1N759A. 9 Page Number 1N4614 thru 1N4627 . .JANC. 141 1N746A thru 1N759A. .JANC. . 121 1N4614-1 thru 1N4627-1 .J, TX, TXV . .


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    PDF 1N746 1N759A. 1N746A-1 1N759A-1 1N821 1N829A. 1N4614 1N4627 1N4614-1 1N4627-1 D4372A 1N6677-1

    th 2167.1

    Abstract: the 2167.1
    Text: Zero-TC Reference Diodes Microsemi '4 Part Number Microsemi Division Scottsdale JAN1N4584A-1 Scottsdale JAN1N4584AUR-1 Scottsdale JANS1N4580A-1 JANS1N4581A-1 Scottsdale Scottsdale JANS1N4582A-1 Scottsdale JANS1N4583A-1 Scottsdale J ANSI N4584A-1 Scottsdale


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    PDF DO-35 DO-213AA th 2167.1 the 2167.1

    IC 7449

    Abstract: ta 8250 1N3206 an 8249 IC 7448
    Text: Signal/General Purpose Diodes Microsemi Division Data Package jïy p e Mil Outline Spec Sheet Watertown Santa Ana Watertown Watertown Watertown Santa Ana Watertown Watertown Watertown Santa Ana Watertown Watertown Watertown Watertown Santa Ana Watertown Scottsdale


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    1n914 surface mount diode

    Abstract: equivalent diode for 1n457 1N457 equivalent 1N459 equivalent 1N914 SOT-23 1N456A 1n4148 sot 1N4148 SOT-23 1n457a equivalent 1N914 diode SOT-23
    Text: This Surface Mount Diodes Material tr In a fc-J fc-> General Purpose & Specialty Surface Mount Diodes continued The National "MMBD" Series provides the SOT-23 electrical equivalent of the standard devices listed. Each family is available in 5 configurations.


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    PDF b501130 1n914 surface mount diode equivalent diode for 1n457 1N457 equivalent 1N459 equivalent 1N914 SOT-23 1N456A 1n4148 sot 1N4148 SOT-23 1n457a equivalent 1N914 diode SOT-23

    lt1038 replacement

    Abstract: LT1004DS Julie Research Labs LT1029DS ultronix 105A rosemount 644 Allen-Bradley DC Link Capacitor shelf life LT1038 cermet microphone la 1201 sanyo
    Text: Lirm Application Note 42 TECHNOLOGY j une 1991 Voltage Reference Circuit Collection Brian Huffman This application note is a guidebook of circuits featuring voltage reference ICs in various configurations. The cir­ cuits shown are both basic as well as complex and employ


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    PDF LTC1044 AN42-30 AN42-31 AN42-32 lt1038 replacement LT1004DS Julie Research Labs LT1029DS ultronix 105A rosemount 644 Allen-Bradley DC Link Capacitor shelf life LT1038 cermet microphone la 1201 sanyo

    A-254168-2

    Abstract: VOLTAGE REGULATOR IC LM SERIES lm 2490 VR9F Arnold A-254168-2 core with 60 turns LM336H-2.5 LM136-2.5
    Text: SñE J> bSDllEH DD7441Ô 177 « N S C 2 National oí Semiconductor LM136-2.5/LM236-2.5/LM336-2.5V Reference Diode General Description The LM136-2.5/LM236-2.5 and LM336-2.5 integrated cir­ cuits are precision 2.5V shunt regulator diodes. These monolithic IC voltage references operate as a low-tempera­


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    PDF DD7441Ô 5/LM236-2 LM336-2 LM136-2 5/LM336-2 A-254168-2 VOLTAGE REGULATOR IC LM SERIES lm 2490 VR9F Arnold A-254168-2 core with 60 turns LM336H-2.5 LM136-2.5

    IN3599

    Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
    Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0


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    PDF DD0DB05 IN3599 IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485

    AMERICAN POWER DEVICES 1n914

    Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
    Text: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V


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    PDF DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619 1N890 1N914 AMERICAN POWER DEVICES 1n914 1N5209 1N3064

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    4566A

    Abstract: do-7 diode iss 4569A CKN6-16/1N/C/003
    Text: ☆ JA N S^ Wicrosemi Corp. f j The <3iode exp en s SCOTTSDALE, A I i 7 m \ 1 N 4 5 6 5 , A, -1 thru 1 N 4 5 8 4 , A, -1 DO-7 F o r m o re in fo rm a tio n call: 602 941-6300 FEATURES • 6.4 V ± 5% ZENER VOLTAGE (NOTE 1] • TEMPERATURE COEFFICIENT RANGE: 0.01 %/°C TO 0.0005%/°C


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    PDF 1N4565A 1N4574A MIL-S-19500/452 DO-35 4566A do-7 diode iss 4569A CKN6-16/1N/C/003

    diode IN456

    Abstract: IN456
    Text: 1N456 I n ter n a t/ onal S e m ic o n d u c t o r I n c . thru 1N463/A LOW LEAKAGE DIODES And Other Diodes DIFFUSED SILICON PLANAR ABSOLUTE MAXIMUM RATINGS NoteD Tem peratures S to ra g e T e m p e ra tu re : • M axm um J u n c tio n O p e ra tin g T e m p e ra tu re :


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    PDF 1N456 1N463/A IN456/A 1N457/A 1G0G37Ã diode IN456 IN456

    1N45A

    Abstract: 1N4765
    Text: MOTOROL A SC iD IO DE S/O PTO} lb DE|b3b725S 0D7 Ö027 2 | - r - / j - ¿>1 1N4370 thru 1N4372 See Page 4-4 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N4549 thru 1N4564 See Page 4-23 LOW-LEVEL T E M P E R A T U R E -C O M P E N SA T E D ZEN E R R EF E R E N C E D IO D E S


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    PDF b3b725S 1N4370 1N4372 1N4549 1N4564 1N4565 1N4584 1N4765 1N4784 1N45A

    2N4891

    Abstract: 2N4893 2N4894 equivalent 2n4891 2N4892 2N4891 unijunction 2N4894 equivalent MAV-4
    Text: TYPES 2N4891 THRU 2N4894 P-N PLANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . O L-S 6 8 9 7 7 6 , J A N U A R Y 1967 PLAN AR UNIJUNCTION S IL E C T t TRANSISTORS^ FOR APPLICATIO N IN SCR D R IV E R S , MOTOR-SPEED CONTROLS, TIM ER S, W AVEFORM G EN ERA TO R S, M U LT IV IB R A TO R S , RING CO UN TERS,


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    PDF 2N4891 2N4894 2N4893 equivalent 2n4891 2N4892 2N4891 unijunction 2N4894 equivalent MAV-4

    Untitled

    Abstract: No abstract text available
    Text: 1N4565, A, -1 thru 1N4584, A, -1 DO-35 Microsemi Corp. f T h e ó<ooe e xpe rts SCOTTSDALE, AZ F o r m o r e i n f o r m a t i o n c a ll: 602 941-6300 FEATURES • 6 .4 V ± 5 % Z E N E R V O L T A G E ( N O T E 1| • J A N S E Q U IV A L E N T A V A IL A B L E VIA SCD


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    PDF 1N4565, 1N4584, DO-35 500/yA 1N4569A 1N4570 1N4574A 1N4575 1N4579A

    MIL-S-19500/452

    Abstract: IN4581 IN4575A 1N4565 1N4565A 1N4566 1N4566A 1N4567 1N4567A 1N4568
    Text: i m - 11M4565 thru 1 Ml4 5 8 4 A ! FEATURES • • • • 6.4 v o lt ‘ 5% Z e n e r v o lta g e N o te 1 T e m p e ra tu re c o e ffic ie n t range: 0.01 % /°C to 0.00 0 5 % /°C Z e n e r te st c u rre n t range: 5 0 0 n A to 4 m A 1 N 4 5 6 5 A thru 1 N 4 5 7 4 A h a ve J, T X, T X V q u a lific a tio n to M IL -S -1 9 5 0 0 / 4 5 2


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    PDF 11M4565 Ml4584A 500nA 1N4565A 1N4574A MIL-S-19500/452 1N4565 1N4565A 1N4566 1N4566A MIL-S-19500/452 IN4581 IN4575A 1N4566A 1N4567 1N4567A 1N4568

    diode IN457

    Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
    Text: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September


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    PDF MIL-S-19500/193C 1N457, 1N458, 1N459 MIL-S-19500 5961-A371) diode IN457 JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier

    1N459

    Abstract: 1N456 1N457 IN456 IN457 J 1N456 1N458
    Text: DIODE 1N456 JAN 1N457 JAN 1N458 JAN 1N459 Low Current DESCRIPTION G eneral p urp o se low c u rre n t d io d e w ith h ig h re lia b ility c h a ra c te ris tic s FEATURES • M e ta llu rg ic a l Bond • Q u a lifie d to MIL-S-19500/193 • P lanar P a ssivated C hip


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    PDF 1N456 1N457 1N458 1N459 MIL-S-19500/193 1N456 1N457 1N458 1N459 IN456 IN457 J 1N456

    23J2

    Abstract: BAW32D BAY18 1N484 1n484a 1N456 1N457 1N461 1N462 1N483
    Text: silicon signal diodes diodes de signal au silicium Type vF / v r -v r m >o m ax V max (m A) general purpose m ax (V) THOMSON-CSF iF |r (mA) m ax (nA) / C Styp m ax (pF) Vr (V) Casa usage général Tam b = 25°C 1N456 1N 456 A 1N457 1N 457 A 1N461 25 25- 30


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    PDF 1N456 1N457 1N461 1N462 1N483 1N484 CB-26) 23J2 BAW32D BAY18 1n484a