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    J 2N2221 Price and Stock

    Microchip Technology Inc JANSP2N2221AL

    Bipolar Transistors - BJT RH Small-Signal BJT
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    Microchip Technology Inc JANSL2N2221AL

    Bipolar Transistors - BJT RH Small-Signal BJT
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    Microchip Technology Inc JANSL2N2221A

    Bipolar Transistors - BJT RH Small-Signal BJT
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    Microchip Technology Inc JANSP2N2221A

    Bipolar Transistors - BJT RH Small-Signal BJT
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    Microchip Technology Inc JANSF2N2221AUB/TR

    Bipolar Transistors - BJT RH Small-Signal BJT
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    J 2N2221 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J 2N2221 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N2221 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-2N2221 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J.2N2221 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J 2N2221A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N2221A Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-2N2221A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J.2N2221A Thomson-CSF Condensed Data Book 1977 Scan PDF

    J 2N2221 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n2222a

    Abstract: 2n2221a of 2N2222A BR 2N2222A NPN J 2N2222A 2n2222a surface
    Text: TECHNICAL DATA 2N2221A J, JTX, JTXV, JANHC 2N2222A J, JTX, JTXV, JANHC MIL-PRF QML DEVICES Processed per MIL-PRF-19500/255 NPN SILICON SWITCHING TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    Original     		PDF 2N2221A 2N2222A MIL-PRF-19500/255 of 2N2222A BR 2N2222A NPN J 2N2222A 2n2222a surface

    SOR2222

    Abstract: 2SC944 1G335 MM1613 12p sot-23 NEC SOT-23 SOT23 25N 224AA bsw84
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 PN2221A 2N2218A HSEl64 SOR3903 (A) 2N2224 SOR2222A (A) BFX17 BFX17 BFX17 MM1613 ~~i:~~ 15 20 BSS79B BSS79B TMPT2221A BSW84 TP2218A TP2221A MMBT4401 MMBT4401 ~~~b~401 25 30 TIS111 TIS111 2N2221A


    Original     		PDF PN2221A 2N2218A HSEl64 SOR3903 2N2224 SOR2222A BFX17 MM1613 SOR2222 2SC944 1G335 12p sot-23 NEC SOT-23 SOT23 25N 224AA bsw84

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    2N2147

    Abstract: 2N2075 2N2148 2N2160 2N1545 2N1924 2n2222 book TRANSISTOR 2N2222 2N2016 2N2219 transistor
    Text: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,


    OCR Scan     		PDF 2N1542A 2N1599 2N1671A 2N1811 2N2077A 2N2192B 2N1543 2N1606 2N1671B 2N1812 2N2147 2N2075 2N2148 2N2160 2N1545 2N1924 2n2222 book TRANSISTOR 2N2222 2N2016 2N2219 transistor

    2N2148

    Abstract: 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N1906 transistor 2N2147 transistor 2n1906 2N1924
    Text: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,


    OCR Scan     		PDF 2N1542A 2N1599 2N1671A 2N1811 2N2077A 2N2192B 2N1543 2N1606 2N1671B 2N1812 2N2148 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N1906 transistor 2N2147 transistor 2n1906 2N1924

    2n2906

    Abstract: PN2221 PN2906A 2N2221A 2N2906A PN2906
    Text: 2N 2906 PN 2906 • 2N2906A ■ PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES J CASE TO-18 CASE T0-92A Ä CBE EBC 2N290ë 2N2906A PN2906 PN2906A THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM


    OCR Scan     		PDF 2N2906 2N2906A PN2906A 2n2906, 2n2906a, pn2906, pn2906a 2n2221 2N2221A, PN2221, 2n2906 PN2221 2N2221A PN2906

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


    OCR Scan     		PDF ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package

    beta transistor 2N2222

    Abstract: 2N2222 transistor 2n2222 2N2219 transistor 2n2222 TRANSISTOR 2n2222 npn transistor 2N2222A NPN transistor 2n2222 2N2222 chip 2N2222A npn transistor
    Text: DIO NICS INC. 2N2222A 2N2221A 2N2219A 2N2218A H 2N2222 2N2221 • ■ 2N2219 2N2218 tt AUSHUORE ST. WCSTBllflr. NY. 1»S90 »l«"9?W474 /*"%k I /"\ J A O K I A A -4 O A NPN S IL IC O N HIGH C U R R E N T 1.0 AMP T R A N S I S T O R CHIPS D E S IG N E D FOR H Y B R ID C lR C U I T APPLICATIONS.


    OCR Scan     		PDF 2N2222A 2N2221A 2N2222 2N2221 2N2219 2N2218 beta transistor 2N2222 transistor 2n2222 2N2219 transistor 2n2222 TRANSISTOR 2n2222 npn transistor NPN transistor 2n2222 2N2222 chip 2N2222A npn transistor

    BCY591

    Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
    Text: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings


    OCR Scan     		PDF BCY59-10 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BCY591 BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration

    J 2N2369

    Abstract: PIN CONFIGURATION 2N2222 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A
    Text: r TO*î8 FL \ PIN CONFIGURATION 1. Emitter 2. Base 3. Collector DIM MIN A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 MAX E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N2222A 2N2368 2N2369 2N2369A J 2N2369 PIN CONFIGURATION 2N2222 2N2221 2N2221A 2N2222

    C495 transistor

    Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
    Text: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250


    OCR Scan     		PDF BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495

    Untitled

    Abstract: No abstract text available
    Text: TO-18 A~ DIM A B C D E F 6 H J K L " B - "1 To là li MIN 5.24 4,52 4.31 0.40 — — — MAX 5.84 4.97 5.33 0.53 0,76 1.27 2.97 1.17 1.21 0.91 0.71 12.7 45 DEG PIN C0NF1GURATI0N:1. EMfTTER 2. BASE 3. COLLECTOR TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25X, Unless Otherwise Specified)


    OCR Scan     		PDF 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A

    bcy5b

    Abstract: BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720
    Text: I— B PIN C O N FIG UR ATIO N 1. Emitter 2. Base 3. C ollector DIM MIN M AX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0 ,40 0,53 E - 0,76 F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45D E G ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 45DEG Tas25Â 2N706A BCY79-9 BCY79-10 BFX37 CF103 bcy5b BCY591 BC179C BSX21 BC177C BCY581 2N708 2N718 2N718A 2N720

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    N2905

    Abstract: N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2904A 2N2906A
    Text: PNP SWITCHING T A B LE 4 SILICO N PLA N A R M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S Type V c EO Max VcE sat at hFE f j Min at at Switching Times (M ax) at n 1 The devices shown in this table are characterised for general medium voltage, medium and


    OCR Scan     		PDF ZT189 T0-18 2N4036 2N2102 2N2904A 4BCY79 BCY59 N2904 2N2218 N2905 N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2906A

    2N2243

    Abstract: No abstract text available
    Text: DEVICE TYPF pa c k a g e ByCEO BVC80 BVEBO ICBO @ VCB IV i M- N i V l M>N . MN i •• A1 MAX JV» HFE @ VC & IC MIN MAR .V COB J v*. FT 2N1507 2N1566 2N16I3 2N1711 2N1889 NPN NPN NPN NPN NPN ro-5 ro-5 TO 5 ro- 5 TO-5 30 60 50 50 60 60 00 75 75 100 5 5 7


    OCR Scan     		PDF BVC80 2N1507 2N1566 2N16I3 2N1711 2N1889 2NI890 2NI973 2N1974 2N1975 2N2243

    BSX21

    Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
    Text: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF BCY59-9 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BSX21 BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration BC-108 2N2221A

    Untitled

    Abstract: No abstract text available
    Text: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at


    OCR Scan     		PDF 7057fl BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2369A 2N2368 2N2369

    Untitled

    Abstract: No abstract text available
    Text: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N2221 BSX48 CIL352 BSX21 BFY76 BCY59-9 BCY59-8 BCY59-7 BCY59-10 BCY59

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


    OCR Scan     		PDF 2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720

    ULN 2303

    Abstract: 2n222 itt 2n2222 4431b 2N2272A itt 2N2222A 2M222 2N222J 2N2222A itt UFLN
    Text: s e m ic o n d u c t o r t e c h n ic a l d a ta 2N2221JAN, JTX, JTXV 2N2221AJAN, JTX, JTXV 2N2222JAN, JTX, JTXV 2N2222AJAN, JTX, JTXV, JANS CRYSTAL OfJCS 2805 Veterans Highway Suit 14 processed per MIL-S-19500/255 NPN Silicon Small-Signal Transistors RonkorKoma N Y. 1177C


    OCR Scan     		PDF 2N2221JAN, 2N2221AJAN, 2N2222JAN, 2N2222AJAN, MIL-S-19500/255 1177C 2M222t 2N222J 2N2221A 2N2272A ULN 2303 2n222 itt 2n2222 4431b itt 2N2222A 2M222 2N222J 2N2222A itt UFLN

    2N2221A

    Abstract: 2N2222A NPN transistor 2n2221a 2n2222a central
    Text: Data Sheet Central" 2N2221A 2N2222A S em ico n d u cto r Corp. NPN SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:


    OCR Scan     		PDF 2N2221A 2N2222A 2N2221A, 2N2222A 150mA, NPN transistor 2n2221a 2n2222a central

    2N2217

    Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
    Text: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA


    OCR Scan     		PDF 2N2217 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A 2N2222A) 2N2218, 2N2221 KH 2222 ic TT 2222 ip 2222A 2N2218