JANTXV1N5415
Abstract: No abstract text available
Text: 1N5415/US thru 1N5420/US Standard 3A FAST RECOVERY RECTIFIERS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 125, REV D.1 AV AI L AB L E AS 1 N , J AN , J AN T X , J AN T XV J AN S J AN EQ U I VAL EN T * SJ*, SX*, SV*, SS* Fast Recovery Rectifiers Qualified per MIL-PRF-19500/411
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1N5415/US
1N5420/US
MIL-PRF-19500/411
MILPRF-19500/411
JANTXV1N5415
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5415
Abstract: 1N5415
Text: 1N5415/US thru 1N5420/US Standard 3A FAST RECOVERY RECTIFIERS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 125, REV D.1 AV AI L AB L E AS 1 N , J AN , J AN T X , J AN T XV J AN S J AN EQ U I VAL EN T * SJ*, SX*, SV*, SS* Fast Recovery Rectifiers Qualified per MIL-PRF-19500/411
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1N5415/US
1N5420/US
MIL-PRF-19500/411
MILPRF-19500/411
5415
1N5415
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S29CL016J
Abstract: S29CL-J S29CD016J S29CD032J S29CD-J S29CL032J marking code CLJ
Text: S29CD-J & S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J & S29CL-J Flash Family Cover Sheet Data Sheet Preliminary
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S29CD-J
S29CL-J
S29CD032J,
S29CD016J,
S29CL032J,
S29CL016J
S29CD-J
S29CL016J
S29CD016J
S29CD032J
S29CL032J
marking code CLJ
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cd032j
Abstract: S29CD032J0 S29CD016J S29CD032J S29CD-J S29CL016J S29CL032J S29CL-J
Text: S29CD-J & S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J & S29CL-J Flash Family Cover Sheet Data Sheet Preliminary
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Original
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S29CD-J
S29CL-J
S29CD032J,
S29CD016J,
S29CL032J,
S29CL016J
S29CD-J
cd032j
S29CD032J0
S29CD016J
S29CD032J
S29CL016J
S29CL032J
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Conductivity Mechanisms and Breakdown Characteristics of Niobium Oxide Capacitors
Abstract: No abstract text available
Text: Conductivity Mechanisms and Breakdown Characteristics of Niobium Oxide Capacitors J. Sikula, J. Hlavka, V. Sedlakova, L. Grmela Czech Noise Research Laboratory, Brno University of Technology Technicka 8, 603 00 Brno, Czech Republic Phone: + 4205 41143328, Fax. + 4205 41143398, E-mail: sikula@feec.vutbr.cz
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sm 4205
Abstract: No abstract text available
Text: CONDUCTIVITY MECHANISMS AND BREAKDOWN CHARACTERISTICS OF NIOBIUM OXIDE CAPACITORS J. Sikula, J. Hlavka, V. Sedlakova and L. Grmela Czech Noise Research Laboratory, Brno University of Technology Technicka 8, 603 00 Brno, Czech Republic Tel. +4205 41143328 Fax. +4205 41143398 E-mail: sikula@feec.vutbr.cz
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D100/10
sm 4205
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Untitled
Abstract: No abstract text available
Text: Alle Rechle vorbehallen/ 411 rights reserred 5 k 2 3 1 77,5 M3x10 _ l _1_1_ 1 1 1 1 iii _ 1_1_ L Hon ESAV 16A 500V 6 k V 3 12A 600V 111 | i 1 1 1 1 j 1 iw /i ivv / j J fI i 1 j 1 1 = \y r/M SB iv v /j ivv / j iv^r/i |vtfa u t n I vvy| L w l l w | Ivwyl J vj ryl |v* r /
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M3x10
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Untitled
Abstract: No abstract text available
Text: Alle Rechle vorbehallen/ 411 rights reserred 5 3 k 2 1 57 D M3x10 j j _ i_ Han ESAV 1 IGA sobv 6kv3 UA 60pV 1 —F1 c i 1 1 1 ¥ =L= =U =U + _l_ L a t K T / M I V V / J |V ^ r / M I V W / J I V V / J i w / l I W J [vi ft} lv\ ft} k i ft 1 Ivi ft I f t 1
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M3x10
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PDF
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Untitled
Abstract: No abstract text available
Text: mQ to BNC/N mQ J A C K to BN C PLU G PART NUMBER R 191 411 mQ P LU G to BN C J A C K PART NUMBER R 191 413 mQ J A C K TO BN C J A C K Panel sealed, bulkhead feedthrough PART NUMBER R 191 416 Panel piercing mQ P LU G to N J A C K PART NUMBER R 191 603 mQ J A C K to N P LU G
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Untitled
Abstract: No abstract text available
Text: 1CT : 1CT NDTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 4 - P 5 - P 6 (P 3 -P 2 -P 1 : (J 3 -J 6 : (J 1 -J 2 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 4 (P 3 -P 1
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OCR Scan
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350uH
10OKHz,
CT720034X1
SI-50005
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PDF
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Untitled
Abstract: No abstract text available
Text: L 9 S •qns ioi* jM / ll'll 119 * i * 619 ses u a {J J J j ai * 1 1 9 * i * l nP f P M !q u o d je u id j /a s n q - jp q aiuPN dHVXl3dS3 6EE2E-0 9 1 0] ? Hqmg s ) |u o j|ja i] gNIlUVH j ' V ' 6 1 0 * 2 20 * ¥ 1n POH s a j ja ii n q u u n i a 1 s ; d 1 j d p a j h h s n q - je g
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20EEE
pdZ11jPfdUl
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PDF
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Untitled
Abstract: No abstract text available
Text: =• = IBM13M32734BCE Preliminary 32M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM • Performance: [ -260 Device Latency f X j Clock Frequency 2 j 10 j tAc; j Clock Access Tim e j 7.2 j
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168-Pin
32Mx72
IBM13M32734BCE
66/100MHz
PC100
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PDF
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Untitled
Abstract: No abstract text available
Text: J 2MBI150N-060 fe J S * • « j j x 600V / 150A / 2 4 -y T > 7 Wir U 'J - X j : Features • ft£ • J!±iEil!j High Speed Switching Voltage Drive Low Inductance Module Structure : A p p lica tio n s • * - * s mm 4 >'<—$ Inverter for Motor Drive • A C ,D C if —# 7>~7 AC and DC Servo Drive Amplifier
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2MBI150N-060
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PDF
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1MB1400NN-120
Abstract: 1MB1400 t1400 icca 3100 1MBI400nn BI400N
Text: n I l A n - r •*>' T - >i F ' m ii -t'' 1I MBI 400 NP i v i D 1‘t v 'J iM r -120 i £ .\ J g d i l G B T ^ v u — \/ rN y ' J - ^ j 1MB1400NN-120 fe r n * • ¡ & x 4 - j * > 9 w / H * > •; - x j 1200V / 400A/ 1 10SS. ■ 4t # : Features "/ + > $
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1MB1400NN-120
1MBI400NP-120
1MBI400NN-120
S88HSBU
1MB1400NN-120
1MB1400
t1400
icca 3100
1MBI400nn
BI400N
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Untitled
Abstract: No abstract text available
Text: Alio Rechle vorbehallen/ 411 rights reserred 3 k 5 2 1 Mating face according lo : MIL-C-24308 / DIN 41652 / CECC 75301 -802 •nut thread llllRIIRIIIIIRIIRIIIIIRIRRIIIIIRIRRlPrr No. 1 contact rdf! iw r n w r r j j j l l i k l l l l t - i f l No.1 contact 6 3 , 5 so,
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MIL-C-24308
F-95972
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PDF
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Untitled
Abstract: No abstract text available
Text: d r l G B T ^ E ^ j . — V r N > /,J —X j 2mbm50n-i20 1 & S I& - y ? > ? mrN > ') - X J • i 1200V/150A/ 2 fHIJifl : Features 4 v T V 9' •flS/±i* !i High Speed Switching Voltage Drive > y 9 9 > X i i> =l - Jumfc Low Inductance Module Structure : Applications
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2mbm50n-i20
200V/150A/
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I400N
Abstract: ic lm 3500
Text: r N ' > ,J —X j 2MBI400N-060 im $ : • a ^ x - f * > y w N i s •; - X j 6 0 0 V /4 0 0 A / 2 flilifi. ■ ¡ t t S : Features "/ J - 's ? High Speed Switching Voltage Drive ^ y * * i ^ - iv m m . Low Inductance Module Structure : Applications > '* —9 Inverter for Motor Drive
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2MBI400N-060
1400IM
I400N
ic lm 3500
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PDF
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Untitled
Abstract: No abstract text available
Text: PL P - 3 0 30W S in g le O u t purt L E D P o w e r S u p p ly | series Fealunes : J U fM etltal A C iiifu l I F J. cage J r i s t d i ; fii: S htrrt eiitjuri: O iw '¿ a a .•O w ■ * L! J 1 - -1 d f t l t ' : ! n C -1 J 'l t . 1 T l * CiXiifigtiykM iircoHcdtA
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Untitled
Abstract: No abstract text available
Text: SD"54462"003 m o 55323-1511 MATE WITH : 5 5 3 2 3 -I5 11 MATERIALS J \ 0 ' j y 7 ‘. PBT,UL94HB BLACK HOUSING U V W ffl ( t = 0 . 1 5 ) o TERMINAL : PHOSPHOR BRONZE (t= o . 2) METAL SHELL : PHOSPHOR BRONZE J X 'V 4 P t t « PLATING SPEC. 5 '- 5 ^ - J L :^ X '> 4 P
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UL94HB
SD-54462-003
1F08S
EN-02JI097)
MXJ-54
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PDF
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1mb1600nn-060
Abstract: MJAG 1MBI600NN-060 1MBI600NP-060 S125 l317 IT0-22
Text: i i m ~ t >* ii Fiii ^ | ^ 1 M BIG00NP”060 d l l G B T ^ V . 3 . — V r N y 'J -“X j 1M B I600N N -0 60 i& m & : - ' y * > 7 B r N '> 'J - X j 600V/600A/ lf f lj.1 : Features High Speed Switching Voltage Drive V = L - )\ ,m & Low Inductance Module Structure
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1MBI600NP-060
1MBI600NN-060
00V/600A/
1MBI600NP-060/1MBI600NN-060
MBI600NN-060
J94/J94)
1mb1600nn-060
MJAG
1MBI600NN-060
1MBI600NP-060
S125
l317
IT0-22
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PDF
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1mb1300
Abstract: 1MBI300NP-120 P120 354 MBI300NN-120 M2530 P1201M
Text: I p > ~ r > * t _ F h ^ H m "7 * ^ ^ I 3 N P “ 1 2 0 “ N x 'J- X j im bi300ni\m 20 \/ & A £ •S& X'T • y ? > ? M rN'> IJ - X j 1200V/300A/ 1 fflta •45:5 : Features High Speed Switching #18/±iEW Voltage Drive • 1 £ * > ^ * ? V * ■* i? j i -
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1MBI300NP-120
1MBI300NINI-120
200V/300A/1fflffl
1mbi300np-120
MBI300NN-120
J94/J94)
1mb1300
P120 354
MBI300NN-120
M2530
P1201M
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6MBI10L-060
Abstract: GGT DIODE M604
Text: 6MBI10L-060 ioa IG : Outline Drawings B T i^ a - il/ IGBT MODULE : Features • f i j j y f High Speed Switching • fl£SS*o /± Low Saturation Voltage • f i A J i f f — fi& t tiM O S - y — M ilift) High Input Impedance • * i> = L — J W i y f r —
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6MBI10L-060
GGT DIODE
M604
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BI75
Abstract: No abstract text available
Text: d t lG B T ^ V ^ IL —J U ' y ? > 7 i r N W r N '> 'J — X j 2M BI75N-060 — X j 600V / 75A/ 2 « 1 : Features -y f / 'y •W /± S£R j H igh Sp eed Sw itch in g V o ltage Drive Low In du ctan ce Module Structure : Applications > /< — 9 Inverter for
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BI75N-060
J94/J94)
BI75
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Semiconductor Components MC10EP89 ♦ SO -8, D SUFFIX 8-LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION f*+ / * , r t “ * -* sV ü w j ' .v J /l /• - ,v J v jA v í MC10EP89D SOIC vü Product Preview Coaxial Cable Driver PIN DESCRIPTION
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MC10EP89
MC10EP89D
225ps
MC10EP89/D
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