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    J 6810 Search Results

    J 6810 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    68105-001LF Amphenol Communications Solutions PV® Wire-to-Board Connector System, Mini Latch Housing, Double Row, 2.54mm (0.100in), 4 Positions.. Visit Amphenol Communications Solutions
    68105-002LF Amphenol Communications Solutions PV® Wire-to-Board Connector System, Mini Latch Housing, Double Row, 2.54mm (0.100in), 6 Positions.. Visit Amphenol Communications Solutions
    68105-003LF Amphenol Communications Solutions PV® Wire-to-Board Connector System, Mini Latch Housing, Double Row, 2.54mm (0.100in), 8 Positions.. Visit Amphenol Communications Solutions
    DA14681-01000U2 Renesas Electronics Corporation SmartBond™ Bluetooth® Low Energy 4.2 System-on-Chip (SoC) Visit Renesas Electronics Corporation
    DA14681-01000U22 Renesas Electronics Corporation SmartBond™ Bluetooth® Low Energy 4.2 System-on-Chip (SoC) Visit Renesas Electronics Corporation
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    J 6810 Price and Stock

    Vishay Dale RNC55J6810FSB14

    RES 681 OHM 1/8W 1% AXIAL
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    DigiKey RNC55J6810FSB14 Bulk 100
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    RS RNC55J6810FSB14 Bulk 100
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    • 1000 $2.25
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    Vishay Dale RNC55J6810FSRE8

    RES 681 OHM 1% 1/8W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RNC55J6810FSRE8 Reel 2,000
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    Vishay Dale RNC50J6810FSRE5

    RES 681 OHM 1% 1/10W AXIAL
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    DigiKey RNC50J6810FSRE5 Reel 500
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    Vishay Dale RNC55J6810BSRE5

    RES 681 OHM 0.1% 1/8W AXIAL
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    DigiKey RNC55J6810BSRE5 Reel 500
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    Vishay Dale RNC55J6810FPB14

    RES 681 OHM 1% 1/8W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RNC55J6810FPB14 Bulk 100
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    • 1000 $2.8838
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    RS RNC55J6810FPB14 Bulk 100
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    J 6810 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM O S) : 2mA (max.) Operating KM681001P/J-20: 170m A (max.) K M 681001P/J-25: 150mA (max.)


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    KM681001 KM681001P/J-20: 681001P/J-25: 150mA KM681001P/J-35: 681001P: 32-pin 681001J: PDF

    DSAIH0002571

    Abstract: No abstract text available
    Text: B K C INTERNATIONAL ~ G3E D j j 117^^ 33 q o o o i l j q ^ T y p e N o .1 N 1 4 3 / -r-à t-ô GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone (617 681-0392 TeleFax (617) 681-9135 Telex 928377


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    MIL-S-19500, DSAIH0002571 PDF

    365 pF

    Abstract: ETAH
    Text: KM 311 KM 21 CONDENSATEURS POLYCARBONATE METALLISE METALLIZED POLYCARBONATE CAPACITORS D-electnque CARACTERISTIQUES GENERALES .'V'.-"-'-' , j C it GENERAL CHARACTERISTICS Tem péia!ure d'utilisation s'ecnnolog r-or -nducti Tg à 1 sH z J h 1' upOXy pour C ;:


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    PDF

    NJM78LR05

    Abstract: No abstract text available
    Text: m m w yç-9 m "4-£ ft n ? * c, c- y c.-fr* - a <• * '¥ i ,x „ xasoui8¿wrN a A E xo9oyn8¿*nN o A3 xaso*ri8¿*rN » *a UO 33»x- ri a !S J 3 ^ A O 'f r s m .- d í E ^ w ^ r i ME<-<•O-¿H « . « 68-10S ‘8dlS '8d*<J ‘8dl J na /no/nasoai8¿*rN


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    NJM78LR05 OT-89 NJM78LR05DX NJM78LR05CX NJM78LR05BX NJN78LR05BD/CD/DD NJM78LR05BII/CII/DII NJN78LR05BL/CL/DL NJM78LR05BU/CU/DU NJM78LR05 PDF

    KM681001P

    Abstract: cs-113-1 KM681001-35 KM681001-25
    Text: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM681001P/J-20: 170mA (max.) KM681001P/J-25: 150mA (max.)


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    KM681001 KM681001P/J-20: 170mA KM681001P/J-25: 150mA KM681001P/J-35: 130mA KM681001P: 32-pin 400mil) KM681001P cs-113-1 KM681001-35 KM681001-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681001 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM OS): 2mA (max.) Operating KM6S1001P/J-20:170mA (max.) KM081001P/J-25:150mA (max.)


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    KM681001 KM6S1001P/J-20 170mA KM081001P/J-25 150mA KM681001P/J-35 130mA KM681001P: 32-pln 400mil) PDF

    1N695

    Abstract: DSAIH0002555
    Text: IITTTÖB OOOQ333 1 3QE D B K C INTERNATIONAL T - 0 1 ,-0 7 6 Lake Street PO Box 1436 Lawrence, M A USA 01841 \ Î Æ I-j \ j BKC International Electronics Inc. Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES 1N695 TYPE


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    OOOQ333 1N695 500mA 100mA 800uA MIL-S-19500, 1N695 DSAIH0002555 PDF

    Untitled

    Abstract: No abstract text available
    Text: Alio Rechle vorbehallen/ 411 rights reserred k 5 2 3 1 Mating face according to : MIL-C-24308 / DIN 41652 / CECC 75301 -802 -0 hole iiiiim im iim im iiin T No.1 contact c PCB layout hole component side —t- r5 ^ y to ll J j f Uw [_k i i_ !_ JL .JL


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    MIL-C-24308 F-95972 PDF

    LTS23305

    Abstract: HP 5082-7653 LTD-585G CSS-517Y LTD482RC CSM-57442E HDSP-3403 MAN3920A LTS-4540-AG tdso 5160 k
    Text: Cross Reference For detailed comparison, please always refer to m anufacture r's specs Manufacturer Part Number CSC P/N A B C HP 50 82 -761 0 CSS-3126-11 X X X HP 5 0 8 2-7 6 1 1 CSS-31 2E 1 1 X X X D j 0.30 F" C f ’t ‘ G " C p N •- 0 .3 0 r~ 'i j N


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    CSS-3126-11 CSS-31 CSS-313E-11 CSS-312Y-11 CSS-310Y-11 CSS-416E-11 CSS-561 CSS-5614D TLUR355S LTS23305 HP 5082-7653 LTD-585G CSS-517Y LTD482RC CSM-57442E HDSP-3403 MAN3920A LTS-4540-AG tdso 5160 k PDF

    C S 6822

    Abstract: S 6822 7818a 7812a DH 514 89052 DH822 DH 636 MH 74150 60034
    Text: PART NUMBER INDEX Type pg Type CJ 1023 C J 1024 C J 1201 CJ 2002 CJ 2501 CJ 4002 CJ 5001 CJ 8002 C S 1010 C S 1020 C S 1021 C S 1033 C S 1210 C S 1220 C S 1221 C S 1222 C S 1510 C S 1520 C S 1521 C S 1522 C S 1810 C S 1821 C S 1822 C S 2200 C S 2210 C S 2221


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    IN759A

    Abstract: IN759 1N751A-1 1N758A JANTX 1N750A-1 1N752 1N753A-1 1N754A-1 1N755A-1 1N756A-1
    Text: 1 3 E D I 117^^03 QGQOaafi Q | K C INTERNATIONAL State-of-the-Art V O ID L E S S Construction ^1N!750A*1 IN 7 5 Ô A 1 |M y4 W H £ & tW fl« F f e A ® ® ® ® ® I KM U fg j J g S f e , R E L IA B IL IT Y A jS fe , r i p s ' , ^3? 20 Mil Lead Glass Voidless construction


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    f-ll-09 1N750A-1 N759A1 DO-35 400mW -t-150Â 1N751A-1 1N752Ã 1N753A-1 IN759A IN759 1N751A-1 1N758A JANTX 1N750A-1 1N752 1N753A-1 1N754A-1 1N755A-1 1N756A-1 PDF

    4BB7

    Abstract: No abstract text available
    Text: IliLattice ispLSI’and pLSI 3256 High Density Programmable Logic Features_ J Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — 128 I/O Pins — 11000 PLD Gates — 384 Registers — High Speed Global Interconnect


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    3256-70LM 160-Pin 3256-70LG 167-Pin 3256-50LM 3256-50LG 4BB7 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT NO. REVISIONS 68105 MO. OF "A" P/N '6 " pos 68105 - 001 4 5.08/.200 7.03/. 219 7.62/. 300 9.6 2 / 3 7 ? 68105 002 6 6 8 !O B -003 8 ¡0.16/. 400 12.16/419 A 3 BY DESCRIPTION REV OATE fH0& RLSD RE i/ISEP PER E C k J ê n o NOTE : 1 SEE PRINT 65043 FOR DETAILED


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    PDF

    TEA6811V

    Abstract: TEA6810 TEA6810V TEA6811 TEA6821 TEA6821T kia 7208
    Text: Philips Semiconductors Product specification Front-end and PLL synthesizers for . J car radios -r.-* .» , TEA6810V; TEA6811V FEATURES • Synthesizer function which includes a Voltage Controlled Oscillator VCO , dividers, phase detector, charge-pump and in-lock detector


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    TEA6810V; TEA6811V TEA6810V TEA6811V, TEA6821V TEA681xV TEA6821T firs60 711062b 010500b TEA6811V TEA6810 TEA6811 TEA6821 kia 7208 PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattice ! Corpo?atfont0r ispLSI' 2128E In-System Programmable SuperFAST High Density PLD Features Functional Block Diagram • SUPERFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC Output Routing Pool ORP | j Output Routing Pool lORP) — — — — —


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    2128E 16-bit PDF

    1N5711 SMD

    Abstract: sd101 BKC Semiconductors 1N6263
    Text: DO-35 Glass Ì Applications 1N5711, Ì 1N6263& SD101 series j Schotte Diodes Guard ring protected schottky barrier. Low forward drop. Fast switching, high performance replacement for small signal devices. Excellent protection for MOS devices. Used in steering, biasing andcoupling


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    DO-35 1N5711, 1N6263& SD101 DO-213AA) 1N5711 1N6263 SD101A SD101B SD101C 1N5711 SMD BKC Semiconductors PDF

    Untitled

    Abstract: No abstract text available
    Text: L a tti pp \J pLS11016 Droarammable Intearation programmable Larae Large Scale Integration High-Density Programmable Logic Features Functional Block Diagram • PROGRAMMABLE HIGH-DENSITY LOGIC — — — — — Member of Lattice's pLSI Family High-Speed Global Interconnects


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    pLS11016 1016-110LJ 44-Pin 1016-90LJ 1016-80LJ 1016-60LJ PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattice j Corporatfonît0r ispLSI 2128E In-System Programmable SuperFAST High Density PLD Features Functional Block Diagram • SUPERFAST HIGH DENSITY IN-SYSTEM PROGRAMMABLE LOGIC — 6000 PLD Gates — 128 I/O Pins, Eight Dedicated Inputs — 128 Registers


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    2128E 0212/2128E 2128E 2128E-165LT176 2128E-135LT176 2128E-100LT176 176-Pin 2-0041/2128E PDF

    j 6810

    Abstract: RESISTOR 218-8 C Scans-0017628 rs tube
    Text: 6HM6 TUNO-SOL N PENTODE M IN IA TU R E TY P E S H A R P -C U TO FF P EN TO D E FOR IF A M P L IF IE R STAGES IN T V RECEIVERS B A S IN G D IA G R A M J E D E C 9P M G LASS B U L B SM ALL BU TTO N 9 P IN B A S E E9-1 O U T L I N E D R A W IN G J E D E C 6 -2


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    DSAIH00025313

    Abstract: No abstract text available
    Text: DO-35 Glass Applications n Schottk» Diode BAT42 J Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CO ROMs and hard disk drives.


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    DO-35 BAT42 DO-213AA) 300jjSecs DO-213AA 01g41 DSAIH00025313 PDF

    n38b

    Abstract: DSAIH0002540
    Text: B K C INTERNATIONAL 03E D | 117^03 OODDOSt. 7- ^ 1 | d - O J _ Type No. 1 N38B_ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES


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    Cto85 MIL-S-19500, n38b DSAIH0002540 PDF

    Untitled

    Abstract: No abstract text available
    Text: DO-41 Glass 1 Amp I • ' ~ Use Advantages 1N5819 HR Schottky Rectifier I HR j Low forward voltage drop. Consult factory for commercial part. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss.


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    DO-41 1N5819 -1950Q 01g41 PDF

    Philips 021 LL capacitors

    Abstract: marking IRH rht 165 philips RADIAL philips capacitor
    Text: Philips Components Maintenance type Aluminium electrolytic capacitors Radial Standard Long-Life 046 RSL FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Charge and discharge proof - t I i j - $ • Very long useful life: 3000 to 4000 hours at 105 °C,


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    SMD 437 diode

    Abstract: 1N4153UR-1 1N4153 DO-213AA SMD hr BKC Semiconductors
    Text: MINI-MELF-SMD Silicon Diode Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to J A N / T X / TX V and S level p er


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    MlL-S-19500/437 DO-35 Mil-S-19500 LL-34/35 DO-213AA) 4031-B 1N4153UR-1 DO-213AA 1N4153) SMD 437 diode 1N4153 SMD hr BKC Semiconductors PDF