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    J-STD-004 SN60 Search Results

    J-STD-004 SN60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    J-STD-004 SN60 Datasheets Context Search

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    SAC387

    Abstract: IPC-SF-818 J-STD-004 solder wire rom1 C502 Multicore 96SC J-STD-004 sn60 henkel solder TR-NWT-000078 SAC387 solder J-STD-004 MSDS
    Text: Technical Data Sheet C502 December-2009 PRODUCT DESCRIPTION C502 provides the following product characteristics: Technology Activity Product Benefits IPC/J-STD-004 Classification Application Surface Finishes Solder wire - Cored Medium • No clean • Clear residue


    Original     		PDF December-2009 IPC/J-STD-004 SAC387 IPC-SF-818 J-STD-004 solder wire rom1 C502 Multicore 96SC J-STD-004 sn60 henkel solder TR-NWT-000078 SAC387 solder J-STD-004 MSDS

    SAC387 solder

    Abstract: SAC387
    Text: Technical Data Sheet C400 April-2011 PRODUCT DESCRIPTION C400 provides the following product characteristics: Technology Product Benefits IPC/J-STD-004 Classification Application Surface Finishes Cored solder wire • Halide free • No clean • Clear residue


    Original     		PDF April-2011 IPC/J-STD-004 SAC387 solder SAC387

    IPC-SF-818

    Abstract: SAC387 SAC387 solder
    Text: Technical Data Sheet C511 October-2009 PRODUCT DESCRIPTION C511™ provides the following product characteristics: Technology Activity Product Benefits IPC/J-STD-004 Classification Application Surface Finishes Cored solder wire High • No clean • Clear residue


    Original     		PDF October-2009 IPC/J-STD-004 IPC-SF-818 SAC387 SAC387 solder

    IPC-SF-818

    Abstract: SAC387 SAC305 C400TM SAC387 solder J-STD-004 MSDS EN29454-1 TR-NWT-000078 Multicore SOLDER Multicore 96SC
    Text: Technical Data Sheet C400 October-2009 PRODUCT DESCRIPTION C400™ provides the following product characteristics: Technology Product Benefits IPC/J-STD-004 Classification Application Surface Finishes Cored solder wire • Halide free • No clean • Clear residue


    Original     		PDF C400TM October-2009 C400TM IPC/J-STD-004 IPC-SF-818 SAC387 SAC305 SAC387 solder J-STD-004 MSDS EN29454-1 TR-NWT-000078 Multicore SOLDER Multicore 96SC

    QQ-S-571E

    Abstract: IPC-J-STD-004 QQ-S-571 MSDS QQ-S571E QQS-571-E QQ-S-571 AIMTERGE-520A C425 SN100C RMA202-25
    Text: RMA Cored Wire Solder Rosin Mildly Activated Cored Wire Solder Features: - Good Activity Level - Mildly Activated Flux - Good Wetting Properties - Good Thermal Transfer - Glycol-Free * Meets QQS-571-E Specification and Applicable IPC-J-STD-004 and -006 Requirements


    Original     		PDF QQS-571-E IPC-J-STD-004 ISO9001 45-micron QQ-S-571E QQ-S-571 MSDS QQ-S571E QQ-S-571 AIMTERGE-520A C425 SN100C RMA202-25

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    BC237

    Abstract: TRANSISTOR bc177b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		PDF BAW156LT1 BAW156LT3 inch/10 BAW156LT1 236AB) Junc218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 TRANSISTOR bc177b

    MPS6520 equivalent

    Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage


    Original     		PDF MPSW01 MPSW01A* MPSW01A 226AE) Junc218A MSC1621T1 MSC2404 MPS6520 equivalent BC237 transistor Vbe 2n2222 Characteristic curve BC107

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15


    Original     		PDF MPSH17 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE


    Original     		PDF MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPS2369 equivalent

    Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage


    Original     		PDF MPS2369 MPS2369A* 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS2369 equivalent BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"

    motorola p1f

    Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363

    2N5640 equivalent

    Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C


    Original     		PDF 2N5640 226AA) Gate218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N5640 equivalent BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431

    BC237

    Abstract: marking CODE N3 SOT223 marking N3
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE


    Original     		PDF MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 marking CODE N3 SOT223 marking N3

    MV104 "direct replacement"

    Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.


    Original     		PDF MV104) MV104 226AA) Curren218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV104 "direct replacement" 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION

    2N3819

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for


    Original     		PDF OT-416/SC 7-inch/3000 2SC4617 SURFAC218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3819 BC237 BCY72