GaAs FETs
Abstract: FLM1414-8C
Text: FLM1414-8C Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 19% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed
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FLM1414-8C
FLM1414-8C
2200mA
J11jU
GaAs FETs
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FLM1213-4C
Abstract: GaAs FETs fujitsu gaas fet N32C microwave databook
Text: p. FLM1213-4C . J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed
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FLM1213-4C
FLM1213-4C
1100mA
1213-4C
J11jU
GaAs FETs
fujitsu gaas fet
N32C
microwave databook
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1213-6F
Abstract: No abstract text available
Text: F| .ft . FLM1213-6F i Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G-j^B = 7.0dB (Typ.) • High PAE: r iadd = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
VD600
1213-6F
J11jU
1213-6F
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