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    J175 FET Search Results

    J175 FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation
    ISL6146DFRZ Renesas Electronics Corporation Low Voltage ORing FET Controller Visit Renesas Electronics Corporation

    J175 FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J174

    Abstract: j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking
    Text: Philips Semiconductors; J174; J175; J176; J177; P-channel silicon field-effect transistors Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information Information as of 2001-11-13 J174; J175; J176; J177; P-channel


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    PDF rework/j174 J174 j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking

    EQUIVALENT FOR J175

    Abstract: J175 EQUIVALENT FOR J174 J177 J176. P-CHANNEL. TO-92 J177 equivalent J174 equivalent J176 J174 EQUIVALENT FOR J176
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification J174; J175; J176; J177 P-channel silicon field-effect transistors


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    PDF MAM388 EQUIVALENT FOR J175 J175 EQUIVALENT FOR J174 J177 J176. P-CHANNEL. TO-92 J177 equivalent J174 equivalent J176 J174 EQUIVALENT FOR J176

    Untitled

    Abstract: No abstract text available
    Text: J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. J174 / 175 / 176 / 177 1 MMBFJ175 / 176 / 177


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    PDF MMBFJ175 MMBFJ176 MMBFJ177 OT-23 O-92-3L MMBFJ175 OT-23 MMBFJ176

    MMBFJ176 on semiconductor

    Abstract: J175 MMBFJ176 6x marking sot-23 p-channel
    Text: J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G S SOT-23 D Mark: 6W / 6X / 6Y TO-92 DG S


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    PDF MMBFJ175 MMBFJ176 MMBFJ177 OT-23 MMBFJ175 OT-23 MMBFJ176 MMBFJ176 on semiconductor J175 6x marking sot-23 p-channel

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


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    PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    e270 siliconix

    Abstract: 2N3379 2N2844 InterFET MPF2609
    Text: JUNCTION FET Item Number Part Number Manufacturer g. V BR GSS IDSS (V) (A) Min (S) Max 2.0m 2.2m 2.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 5.0m 6.0m 6.0m 6.0m 6.0m 6.0m 6.0m 1.4m 1.5m 1.0m


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    PDF 2N2844 UC420 MPF2608 SMP2608 TMPF2608 TP2608 2N2608 PN5019 Pl087 e270 siliconix 2N3379 InterFET MPF2609

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


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    ultra low igss pA mosfet

    Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


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    PDF 100pA 360mW ultra low igss pA mosfet ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent

    U402 N CHANNEL FET

    Abstract: P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode
    Text: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


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    PDF LS627 FF627 400mW U402 N CHANNEL FET P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode

    FET package TO-71

    Abstract: SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L
    Text: Transistors Siliconix Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) Max (V) tON Max (ns) Ciss Typ (pF) ID Max (A) PD Max (W) –80 –100 –120 –200 –200 –200 –240 5 5 20 20 20 20 10 –4.5 –4.5 –2.4 –2.8 –2.5 –2.4 –2.5 55 55 25


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    PDF O-226AA VP0808L VP1008L TP1220L BSS92 VP2020L TP2020L VP2410L O-206AF 3N164 FET package TO-71 SST271 2N4416A JANTX TO72 package n-channel jfet jfet 2N5198 3N164 BSS92 TP2020L VP0808L VP2020L

    J175

    Abstract: J174 J176 J177
    Text: Philips Components J174;J175 J176;J177 y v. P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.


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    PDF M89-1045/RC J175 J174 J176 J177

    J174

    Abstract: J177 J176 J175
    Text: m bbS3*ì31 N AMER DOBMOtn 7DÖ « A P X PHILIPS/DISCRETE b ?E J174 TO 177 D P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel ju nction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc.


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    PDF D0240CH 7Z949B2 J174 J177 J176 J175

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.


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    PDF bb53T31 DQ240CH

    Untitled

    Abstract: No abstract text available
    Text: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.


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    J174

    Abstract: J176 MPF970 j177 J175 j175 motorola
    Text: J174 thru J177* C A SE 29-04, STYLE 30 TO-92 TO-226AA f MAXIMUM RATINGS Rating Sym bol Value Unit Drain-Source Voltage Vd S 30 Vdc Drain-Gate Voltage Vdg 30 Vdc Gate-Source Voltage VGS 30 Vdc Gate Current Total Device Dissip ation Derate above 2 5 ’C <a


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    PDF O-226AA) MPF970 J174 J176 j177 J175 j175 motorola

    PMBFJ174

    Abstract: No abstract text available
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs P-CHANNEL JUNCTION FETS FOR SWITCHING ratings type number characteristics - RD S o n ^ max. (Q) ± V DS -IG max. max. (mA) min. (mA)


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    PDF 2N5116 2N5460 2N5461 2N5462 PMBFJ174 PMBFJ175 PMBFJ176

    bfw11 jfet

    Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
    Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72


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    PDF 2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960

    pn5114

    Abstract: PN5432
    Text: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max


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    PDF QQ15bqa PN4091 PN4092 PN4093 2N3382 2N5018 2N5019 RS-468) pn5114 PN5432

    fet to92

    Abstract: 2N3971 to92 fet p channel 2N3994 2N5116 it101 2N3970 2N3972 ITE4391 2N4092
    Text: MÜ^DIL 1. D I S C R E T E S Switches — Junction FET Ordering Information Preferred Part Number Package r DS o n max n Vp min/max •g s s max BVg s s min V pA V •d lo s s min/max mA (o ff) max P* •ap CfSS C|SS max max max ns PF PF 50 90 25 25 25


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    PDF 2N3970 T0-18 2N3971 2N3972 2N4091 2N4092 fet to92 to92 fet p channel 2N3994 2N5116 it101 ITE4391

    MMBFJ174

    Abstract: MMBF5115 p1086 MMBFJ177
    Text: h&E D • b 5 D 1 1 3 D □OB'lSDl TDS ■ NSC5 P Channel V p @ V DSlD Device R BVgss V Min (V) (V) Min Max m d S( oii ) (ß ) Min @ ID Ciss Crss ton toff (PF) Max (PF) Max (ns) Max (ns) Package Max (mA) 2N5018 30 10 -15 1000 75 1 45 10 35 65 TO-18(11 )


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    PDF 2N5018 2N5019 MMBF5114 2N5115 MMBF5115 2N5116 MMBF5116 MMBFJ174 MMBFJ175 MMBFJ176 p1086 MMBFJ177

    SD5400CY

    Abstract: No abstract text available
    Text: Temic S e m i c o n d u c t o r s # SOT23 40 <0^ T092 2 lead T092 (3 lead) T018 (2 lead) T018 (3 lead) DIP16 <0 S014 JFETs - P-Channel JFET Analog Switches Patt Number Breakdown Voltage Min (mA) VS T » Mis Max Min if*) Max 8h(mS> Typ 11 j 1 T yp typ Max


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    PDF DIP16 T0220AA P1087 SST174 SST175 SST176 SST177 SD210DE SD211DE SST211 SD5400CY

    MMBFJ174

    Abstract: P1087 MMBF5115 2N5019 J176 2N5018 2N5115 2N5116 J174 MMBF5114
    Text: bflE D N ATL tSD1130 003^501 TDS • NSCS SE„ IC0N] JIS C r e t e ) P C hannel Vp@VDSlD RoS(on) ( a ) @ iD bvgss Device (V) (V) Min Min Ciss (PF) Max Crss (PF) Max ton (ns) Max toff (ns) Max Package (V) (nA) Min (mA) 10 -1 5 1000 75 1 45 10 35 65 T 0 -18(11)


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    PDF 2N5018 2N5019 MMBF5114 O-236* 2N5115 MMBF5115 2N5116 MMBF5116 MMBFJ174 P1087 J176 J174

    bss170

    Abstract: BSS170F MJ174
    Text: SOT23 SM ALL SIGNAL M O SFETS SO TFETs '• Pinout : 1-Drain, 2-Source, 3-Gate Type BV q s s V !d mA !dm A PD mW R DS(on) VGS><th) Min/Max at lD mA V £2 at Max •d mA V GS V 10 N-CHANNEL; ZVN3320F 200 60 1.0 330 1.0/3.0 1.0 25.0 100 BSS123 100 170 0.68


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    PDF ZVN3320F BSS123 BSS123A ZVN3310F BST82 ZVN4106F ZVN3306F 2N7002 VN10LF BSS170F bss170 MJ174

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


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    PDF MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451