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    J20A10M TRANSISTOR Search Results

    J20A10M TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    J20A10M transistor

    Abstract: J20A10M J20A10
    Text: TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original     		TJ20A10M3 J20A10M transistor J20A10M J20A10 PDF

    J20A10M

    Abstract: J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3
    Text: TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original     		TJ20A10M3 J20A10M J20A10M transistor TJ20A10M3 J20A10 tj20a10m J20A10M3 PDF

    J20A10

    Abstract: J20A10M J20A10M transistor TJ20A10M3
    Text: TJ20A10M3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSVI TJ20A10M3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −100 V)


    Original     		TJ20A10M3 J20A10 J20A10M J20A10M transistor TJ20A10M3 PDF