iosq 050

Abstract: NES1417-20B n channel fet k 1118 SC 1482
Contextual Info: L-BAND POWER GaAs MESFET NES1417-20B NOT RECOMMENDED FOR NEW DESIGN PRELIMINARY FEATURES_ • HIGH P out 20 W 43.0 dBm Typical Pi< • HIGH EFFICIENCY 44% Power Added Efficiency • H GH LINEAR GAIN 14 dB Typical Linear Gain • LOW IMD -40 dBc @ 32 dBm (SCL)