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    J250 100 Search Results

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    OPA336NJ/250 Texas Instruments Single-Supply, MicroPower CMOS Operational Amplifiers MicroAmplifier™ Series 5-SOT-23 -40 to 85 Visit Texas Instruments Buy
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    J250 100 Price and Stock

    Walsin Technology Corporation

    Walsin Technology Corporation 0402N100J250CT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 25 V 10 pF 5% C0G (NP0) 0402 - 55 C + 125 C
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    Mouser Electronics 0402N100J250CT 96,351
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    Walsin Technology Corporation 0201N100J250CT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 10pF +-5% 25V
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    Mouser Electronics 0201N100J250CT 33,894
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    Walsin Technology Corporation RF03N100J250CT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 10pF +-5% 25V
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    Mouser Electronics RF03N100J250CT 13,125
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    Walsin Technology Corporation 0603N100J250CT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 10pF, +-5%, 25V
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    Mouser Electronics 0603N100J250CT 10,975
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    Walsin Technology Corporation 0805N100J250CT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 10pF, +-5%, 25V
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    Mouser Electronics 0805N100J250CT 7,278
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    J250 100 Datasheets Context Search

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    J943-4554

    Abstract: e78996 india E78996 rectifier module IR E78996 IRFK6H250 u114 IRFK6J250 J9-43
    Text: Bulletin E 2 7111 International Ii ÔrIRectifier IRFK6H250,1RFK6 J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • H igh C urrent C apability. UL recognise d E 78996. E lectrically Isola ted B ase Plate. E asy A ssem b ly into E quipm ent.


    OCR Scan     		E27111 IRFK6H250 IRFK6J250 E78996. T0-240 S-162 CH-6032 IL60067. NJ07650. J943-4554. J943-4554 e78996 india E78996 rectifier module IR E78996 u114 IRFK6J250 J9-43 PDF

    2SC3268

    Abstract: EIAJ C-3
    Text: TOSHIBA 2SC3268 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. NF = 1.7dB, |S2iel2= 15.0dB f = 500MHz NF = 2dB, |S2iel2= 9.5dB (f = 1000MHz) 1.6MAX. Q4±a05. 4.6 M A X . 1.7 MAX.


    OCR Scan     		2SC3268 500MHz) 1000MHz) 250mm2 -j250 -jl50 2SC3268 EIAJ C-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1090A 2SC5374A RF Transistor 10V, 100mA, fT=5.2GHz, NPN Single SMCP http://onsemi.com Features • • High gain : ⏐S21e⏐2=10.5dB typ f=1GHz High cut-off frequency : fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		ENA1090A 2SC5374A 100mA, S21e2 A1090-8/8 PDF

    KTC3770S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E B L L Low Noise Figure, High Gain. NF=1.1dB, |S21e| =11dB f=1GHz . D 2 H ) RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		KTC3770S -j250 -j150 -j100 KTC3770S PDF

    0.1 j100

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. NF=1.1dB, |S21e| =11dB f=1GHz . 2 J G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		KTC3770U -j250 -j150 -j100 -j100 0.1 j100 PDF

    KTC3605U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C Two internal isolated Transistors in one package.


    Original     		KTC3605U -j250 -j150 -j100 KTC3605U PDF

    KTC3605T

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G Low Noise Figure, High Gain. 3 4 2 NF=1.1dB, |S21e| =13dB f=1GHz . D F A Two internal isolated Transistors in one package.


    Original     		KTC3605T -j250 -j150 -j100 KTC3605T PDF

    J250

    Abstract: KTC3790U j50 transistor J-150 transistor j50
    Text: SEMICONDUCTOR KTC3790U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.2dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		KTC3790U -j250 -j150 -j100 J250 KTC3790U j50 transistor J-150 transistor j50 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES ・Low Noise Figure, High Gain. E B L L ・NF=1.2dB, |S21e| =13dB f=1GHz . D 2 3 H G A 2 1 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT


    Original     		KTC3790S 1-j150 -j100 -j250 -j150 -j100 -j150 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage


    Original     		KTC3770V -j250 -j150 -j100 PDF

    KTC3770V

    Abstract: transistor j50 marking s22
    Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage


    Original     		KTC3770V -j250 -j150 -j100 KTC3770V transistor j50 marking s22 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E Low Noise Figure, High Gain. B D G 2 3 K A NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25 1 SYMBOL RATING UNIT Collector-Base Voltage


    Original     		KTC3770F -j250 -j150 -j100 -j100 PDF

    2SC4393

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4393 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4393 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. NF = 1.5dB, |S2le|2= 16dB f = 500MHz NF = 1.7dB, |S2lel2= 10.5dB (f = 1000MHz) 2.1 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SC4393 500MHz) 1000MHz) 961001EAA2' 2SC4393 PDF

    KTC3605U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3605U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES B B1 Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB f=1GHz . DIM A A1 B 1 6 2 5 3 4 C A A1 C Two internal isolated Transistors in one package.


    Original     		KTC3605U -j250 -j150 -j100 KTC3605U PDF

    KTC3600U

    Abstract: j50 transistor
    Text: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		KTC3600U -j250 -j150 -j100 KTC3600U j50 transistor PDF

    KTC3600S

    Abstract: transistor j50
    Text: SEMICONDUCTOR KTC3600S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.1dB, |S21e| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		KTC3600S -j250 -j150 -j100 KTC3600S transistor j50 PDF

    KTC3600U

    Abstract: 416 J50
    Text: SEMICONDUCTOR KTC3600U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.1dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		KTC3600U -j250 -j150 -j100 KTC3600U 416 J50 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770UL TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES C 1 ・Low Noise Figure, High Gain. 4 ・NF=1.1dB, |S21e|2=11dB f=1GHz . A 2 3 B MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		KTC3770UL -j250 -j150 -j100 -j100 PDF

    USM NO-0

    Abstract: transistor j50 power 22E KTC3770U
    Text: SEMICONDUCTOR KTC3770U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. NF=1.1dB, |S21e| =11dB f=1GHz . 2 J G A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		KTC3770U -j250 -j150 -j100 USM NO-0 transistor j50 power 22E KTC3770U PDF

    transistor j50

    Abstract: J250 j50 transistor KTC3790S
    Text: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.2dB, |S21e| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		KTC3790S -j250 -j150 -j100 transistor j50 J250 j50 transistor KTC3790S PDF

    j50 transistor

    Abstract: KTC3790U KTC3790
    Text: SEMICONDUCTOR KTC3790U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. 2 NF=1.2dB, |S21e| =13dB f=1GHz . G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage


    Original     		KTC3790U -j250 -j150 -j100 j50 transistor KTC3790U KTC3790 PDF

    j50 transistor

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・Low Noise Figure, High Gain. B D G 2 3 K A ・NF=1.1dB, |S21e|2=11dB f=1GHz . MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		KTC3770F -j250 -j150 -j100 -j100 j50 transistor PDF

    KTC3770V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB f=1GHz . D G H A 2 1 K 3 MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage


    Original     		KTC3770V -j250 -j150 -j100 KTC3770V PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3770F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES E ・NF=1.1dB, |S21e|2=11dB f=1GHz . B D G 2 3 K A ・Low Noise Figure, High Gain. MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage


    Original     		KTC3770F -j250 -j150 -j100 PDF